Substrate
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Substrate-ka SiC 3 inji 350um dhumucdiisuna tahay nooca HPSI Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N nooca dhumucda Dummy/prime waa la habeyn karaa
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6 ee Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
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Nooca SiC Ingot 4H Dia 4inch 6inch Dhumucda Cilmi-baarista / Darajada Madow
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6 inji safayr Boule safayr ah oo keligood ah oo madhan Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Nooca Adkeysiga Sare ee Daxalka Nadiifinta Heerka Sare
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2 inji Silicon Carbide Wafer 6H-N Nooca Heerka Sare ee Darajada Cilmi-baarista Darajada Dummy 330μm 430μm Dhumucda
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Substrate silicon carbide 2 inji ah 6H-N dhexroor laba-geesood ah oo la safeeyey 50.8mm heerka cilmi-baarista heerka wax soo saarka
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Nooca p-nooca 4H/6H-P 3C-N Nooca SIC substrate 4inji 〈111〉± 0.5° Eber MPD
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Substrate-ka SiC nooca P-type 4H/6H-P 3C-N 4 inji oo dhumucdiisu tahay 350um Heerka wax soo saarka Heerka been abuurka ah
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4H/6H-P 6inch SiC wafer Heer aan lahayn MPD Heerka Wax-soo-saarka
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Wafer nooca P-nooca ah SiC 4H/6H-P 3C-N 6 inji dhumucdiisuna tahay 350 μm oo leh Jiho Fidsan oo Aasaasi ah