Dia50.8mm Sapphire Wafer Sapphire Daaqadda Gudbinta Aragga Sare ee DSP/SSP

Sharaxaad Gaaban:

Sababo la xiriira shabag yar oo aan isku mid ahayn iyo guryaha kiimikada iyo jirka ah, sapphire(Al2O3) wafer waa substrates-ka caanka ah ee III-V nitrides, superconductor iyo magnetic epi-film.Waxaa si weyn loogu isticmaalaa GaN iyo korriinka filimka khafiifka ah ee epitaxial, silicon on sapphire, suuqa LED iyo warshadaha indhaha.

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Waa maxay sababta Sapphire?

Astaamaha sapphire crystal-ka ah
1. Sapphire waxay leedahay gudbin sare oo indhaha ah, sidaas darteed waxaa si ballaaran loo isticmaalaa sida qalabka microelectronic tube dielectric, element conduction ultrasonic, waveguide laser cavity, iyo walxaha kale ee indhaha, sida qalabka daaqadaha ee qalabka militariga infrared, baabuurta bannaan, lasers-xoojinta sare iyo indhaha. isgaarsiinta.

2. Sapphire waxay leedahay qallafsanaan sare, xoog sare, heerkulka shaqada sare, caabbinta caabbinta, sifooyinka caabbinta daxalka, sidaas darteed substrate sapphire waxaa inta badan loo isticmaalaa jawi adag, sida cabbirka biyaha kululeeyaha (iska caabbinta heerkulka sare), scanner code code alaabta, xajinta, iyo wax-soo-saarka kale ee saxda ah (iska caabbinta xidho), dhuxusha, gaaska, dareemayaasha si fiican loo ogaado iyo daaqadaha wax baadha (ka-hortagga daxalka).

3. Sapphire waxay leedahay sifooyinka dahaarka korantada, hufnaanta, conductivity kaamerada wanaagsan, iyo qallafsanaan sare, sidaas darteed waxa loo isticmaali karaa sida maadada substrate ee wareegyada isku dhafan, sida LED iyo microelectronic wareegyada, ultra-sare-xawaaraha isku dhafan.

Tilmaamid

Dhexroorka	50.8mm +/- 0.1mm ama +/- 0.02mm
Dhumucda	0.43mm± 0.1mm ama +/-0.02mm
Hanuuninta	C-diyaarad/A-Diyaarad/M-Diyaarad/R-Diyaarad
Tayada dusha sare (xoqid & qod)	60/40, 40/20 ama ka sii wanaagsan
Saxnaanta dusha sare	λ/10, λ/2, λ
Nadiifi Aperture	>85%,>90%
Isbarbar yaac	+/-3', +/-30''
Bevel	0.1 ~ 0.3mm × 45 darajo
Dahaarka	AR, BBAR ama codsi macmiil (UV, VIS, IR)

Maya	Guryaha	Bartilmaameedka	Dulqaad	Hadallo
1	Dhexroorka	50.8mm	± 0.1mm
2	Dhumucda	430μm	± 15μm
3	Jihaynta dusha sare ee diyaarada C	ka baxsan dhidibka C ilaa M0.2°	± 0.1°
4	Dhererka siman ee aasaasiga ah	16mm	± 11mm
5	Hanuuninta fidsan ee aasaasiga ah	Diyaarad (11-20)	±0.1°
6	Dhanka dambe ee Roughness	0.8 ~ 1.2um
7	Dhanka hore Roughness	<0.3nm
8	Wafer gees	Nooca R
9	Wadarta kala duwanaanshaha dhumucda, TTV	10μm (LTV≤5μm, 5*5)
10	SORI	≤10μm
11	Qaansada	-10 μm ≤ Bow ≤ 0
12	Calaamadaha leysarka	N/A		aan lahayn
	Xidhmada	25 wafer oo hal cajalad ah
	Awood raadraac	Wafers waa in la raad raacaa marka la eego lambarka cajaladda

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