150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Diyaarad SSP/DSP

Sharaxaad Gaaban:

Dhammaan kuwan kor ku xusan waa sharraxaadaha saxda ah ee kiristaalo sapphire. Waxqabadka aadka u fiican ee kirismaska ​​sapphire wuxuu ka dhigayaa mid si ballaaran loogu isticmaalo goobaha farsamada sare. Iyadoo horumarinta degdega ah ee warshadaha LED-ka, baahida loo qabo qalabka sapphire crystal ayaa sidoo kale sii kordhaya.


Faahfaahinta Alaabta

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Codsiyada

Codsiyada 6-inch maraqa sapphire-ka ah waxaa ka mid ah:

1. Wax-soo-saarka LED-ka: waferka safayarka waxaa loo isticmaali karaa sida substrate-ka chips-ka LED-ka, iyo adkaantiisa iyo kulaylkeedaba waxay hagaajin kartaa xasilloonida iyo nolosha adeegga chips-yada LED-ka.

2. Wax soo saarka Laser: Waferka Sapphire sidoo kale waxaa loo isticmaali karaa sida substrate-ka laysarka, si uu u caawiyo hagaajinta waxqabadka laysarka iyo sii dheereynta nolosha adeegga.

3. Wax-soo-saarka Semiconductor: Waferrada Sapphire ayaa si weyn loogu isticmaalaa soo saarista aaladaha elegtarooniga ah iyo kuwa optoelectronic, oo ay ku jiraan isku-dhafka indhaha, unugyada qorraxda, aaladaha elegtarooniga ah ee soo noqnoqda, iwm.

4. Codsiyada kale: Wafer Sapphire ayaa sidoo kale loo isticmaali karaa in lagu soo saaro shaashadda taabashada, qalabka indhaha, unugyada qoraxda ee filimka khafiifka ah iyo alaabada kale ee farsamada sare.

Tilmaamid

Qalab Nadiifin sare oo hal crystal Al2O3, wafer sapphire ah.
Cabirka 150 mm +/- 0.05 mm, 6 inch
Dhumucda 1300 +/- 25 um
Hanuuninta Diyaaradda C (0001) ka baxsan M (1-100) diyaarad 0.2 +/- 0.05 digrii
Hanuuninta fidsan ee aasaasiga ah Diyaarad +/- 1 darajo
Dhererka siman ee aasaasiga ah 47.5 mm +/- 1 mm
Wadarta kala duwanaanshaha dhumucda (TTV) <20 um
Qaansada <25 um
Warp <25 um
Iskuxidhka Balaadhinta kulaylka x
Xoogga Dielectric 4.8 x 105 V/cm
Dielectric Constant 11.5 (1 MHz) oo ku dheggan dhidibka C, 9.3 (1 MHz) oo siman
Tangent Dielectric Loss (oo loo yaqaan 'dissipition factor) in ka yar 1 x 10-4
Habdhaqanka kulaylka 40 W/(mK) at 20 ℃
shaandhaynta Hal dhinac oo polished (SSP) ama laba-dhinac fiiqan (DSP) Ra <0.5 nm (by AFM). Dhanka dambe ee waferka SSP wuxuu ahaa dhul fiican Ra = 0.8 - 1.2 um.
Gudbinta 88% +/-1 % @460 nm

Jaantus faahfaahsan

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6 inch wafer sapphire 5

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