Substrate
-
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy darajo cilmi baaris 500um dhumucdiisuna tahay
-
4H-N/6H-N SiC Wafer Reasearch 4H-N/6H-N Wax-soo-saarka Dib-u-Celinta Wax-soo-saarka Heerka Quudinta Dia150mm Substrate-ka Silikon Carbide
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucdiisuna tahay
-
Dia300x1.0mmt Dhumucda Sapphire Wafer C-Diyaarad SSP/DSP
-
HPSI SiC wafer dia: dhumucdiisuna tahay 3inch:350um± 25 µm ee Korantada Korontada
-
8 inch 200mm Sapphire substrate wafer qaro yar 1SP 2SP 0.5mm 0.75mm
-
Hal crystal Al2O3 99.999% Dia200mm maraqa sapphire 1.0mm 0.75mm dhumucdiisuna tahay
-
156mm 159mm 6 inch Sapphire Wafer ee sideC-Diyaarad DSP TTV
-
C/A/M dhidibka 4 inch sapphire wafers hal crystal Al2O3, SSP DSP substrate sapphire adag
-
3inch Nadiifin Sare Semi-Insulating (HPSI) SiC wafer 350um Dummy fasalka koowaad
-
Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub
-
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba jeer oo La Sifeeyay Fasalka Koowaad ee Sare