SiC
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy darajo cilmi baaris 500um dhumucdiisuna tahay
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4H-N/6H-N SiC Wafer Reasearch 4H-N/6H-N Wax-soo-saarka Dib-u-Celinta Wax-soo-saarka Heerka Quudinta Dia150mm Substrate-ka Silikon Carbide
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8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucdiisuna tahay
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HPSI SiC wafer dia: dhumucdiisuna tahay 3inch:350um± 25 µm ee Korantada Korontada
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3inch Nadiifin Sare Semi-Insulating (HPSI) SiC wafer 350um Dummy fasalka koowaad
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Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba jeer oo La Sifeeyay Fasalka Koowaad ee Sare
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Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa
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Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucdiisuna tahay 5-10mm Cilmi-baadhis
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6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy
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3 inch Nadiif Sareedo (Lama Laaban) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade