Wafer HPSI SiC ≥90% Heerka Gudbinta Indhaha ee Muraayadaha AI/AR
Hordhac Muhiim ah: Doorka Wafers-ka HPSI SiC ee Muraayadaha AI/AR
Wafers-ka Silicon Carbide-ka ee HPSI (Safe-Purity Semi-Insulating) waa wafers gaar ah oo lagu garto iska caabin sare (>10⁹ Ω·cm) iyo cufnaanta cilladaha aad u hooseeya. Muraayadaha AI/AR, waxay inta badan u adeegaan sidii walxaha ugu muhiimsan ee muraayadaha hagaha mawjadaha indhaha ee kala duwan, iyagoo wax ka qabanaya dhibaatooyinka la xiriira agabka indhaha ee dhaqameed marka la eego arrimaha qaabka khafiifka ah iyo iftiinka, kala firdhinta kulaylka, iyo waxqabadka indhaha. Tusaale ahaan, muraayadaha AR ee isticmaalaya muraayadaha hagaha mawjadaha SiC waxay gaari karaan aragti aad u ballaaran (FOV) oo ah 70°–80°, iyadoo yareyneysa dhumucda lakabka muraayadda hal keliya ilaa 0.55mm iyo miisaanka ilaa 2.7g oo keliya, taasoo si weyn u xoojineysa raaxada xirashada iyo gelinta muuqaalka.
Astaamaha Muhiimka ah: Sida Agabka SiC u Xoojiyo Naqshadeynta Muraayadaha AI/AR
Tusmada Sare ee Refractive iyo Hagaajinta Waxqabadka Indhaha
- Tusmada iftiinka ee SiC (2.6–2.7) waxay ku dhawaad 50% ka sarreysaa tan galaaska dhaqameed (1.8–2.0). Tani waxay u oggolaanaysaa qaab-dhismeedka hagaha hirarka khafiifka ah oo hufan, taasoo si weyn u ballaarinaysa FOV. Tusmada iftiinka sare leh waxay sidoo kale ka caawisaa xakamaynta "saamaynta qaanso roobaadka" ee caadiga ah ee hagaha hirarka kala duwan, iyadoo hagaajinaysa daahirnimada sawirka.
Awoodda Maareynta Kulaylka ee Gaarka ah
- Iyada oo leh koronto-qaadis kuleyl oo heerkeedu yahay 490 W/m·K (oo u dhow tan naxaasta), SiC si dhakhso ah ayuu u baabi'in karaa kulaylka ay soo saaraan modules-yada bandhigga Micro-LED. Tani waxay ka hortagtaa burburka waxqabadka ama gabowga qalabka heerkulka sare awgiis, taasoo hubinaysa cimriga batteriga oo dheer iyo xasillooni sare.
Xoogga Farsamada iyo Adkeysiga
- SiC waxay leedahay adkeysi Mohs ah oo ah 9.5 (kala bar dheemanka oo keliya), taasoo bixisa iska caabin xoqid oo heer sare ah, taasoo ka dhigaysa mid ku habboon muraayadaha macaamiisha ee inta badan la isticmaalo. Qalooca dusha sare waxaa lagu xakameyn karaa ilaa Ra < 0.5 nm, taasoo hubinaysa luminta hoose iyo gudbinta iftiinka oo aad isugu mid ah hagaha hirarka.
Iswaafajinta Hantida Korontada
- Iska caabinta HPSI SiC (>10⁹ Ω·cm) waxay ka caawisaa ka hortagga faragelinta calaamadaha. Waxay sidoo kale u adeegi kartaa sidii qalab koronto oo hufan, iyadoo hagaajinaysa modules-ka maaraynta korontada ee muraayadaha AR.
Tilmaamaha Codsiga Aasaasiga ah
Qaybaha Muhiimka ah ee Indhaha ee Muraayadaha AI/ARs
- Muraayadaha Hagaha Mawjadaha Kala Duwan: Substrates-ka SiC waxaa loo isticmaalaa in lagu abuuro hageyaal mawjado oo aad u khafiif ah oo taageeraya FOV weyn iyo baabi'inta saameynta qaanso roobaadka.
- Saxannada Daaqadaha iyo Prisms: Iyada oo loo marayo jarista iyo nadiifinta gaarka ah, SiC waxaa loo farsameyn karaa daaqado ilaalin ah ama muraayadaha indhaha ee muraayadaha AR, taasoo kor u qaadaysa gudbinta iftiinka iyo iska caabbinta xirashada.
Codsiyada Dheeraadka ah ee Meelaha Kale
- Elektarooniga Korontada: Waxaa loo isticmaalaa xaaladaha soo noqnoqda sare leh, kuwa awoodda sare leh sida kuwa cusub ee beddela gawaarida tamarta iyo kontaroolada matoorka warshadaha.
- Quantum Optics: Waxay u shaqeysaa sidii martigeliyaha xarumaha midabka, oo loo isticmaalo substrates-ka isgaarsiinta kuntum iyo aaladaha dareenka.
Isbarbardhigga Tilmaamaha Substrate-ka 4 Inch & 6 Inch HPSI SiC
| Halbeegga | Fasal | Substrate 4-Inji ah | Substrate 6-Inji ah |
| Dhexroorka | Fasalka Z / Fasalka D | 99.5 mm - 100.0 mm | 149.5 mm - 150.0 mm |
| Nooca Poly-type | Fasalka Z / Fasalka D | 4H | 4H |
| Dhumucda | Heerka Z | 500 μm ± 15 μm | 500 μm ± 15 μm |
| Darajada D | 500 μm ± 25 μm | 500 μm ± 25 μm | |
| Jihaynta Wafer | Fasalka Z / Fasalka D | Dhidibka: <0001> ± 0.5° | Dhidibka: <0001> ± 0.5° |
| Cufnaanta Micropipe | Heerka Z | ≤ 1 cm² | ≤ 1 cm² |
| Darajada D | ≤ 15 cm² | ≤ 15 cm² | |
| Iska caabinta | Heerka Z | ≥ 1E10 Ω·cm | ≥ 1E10 Ω·cm |
| Darajada D | ≥ 1E5 Ω·cm | ≥ 1E5 Ω·cm | |
| Jihada Fidsan ee Koowaad | Fasalka Z / Fasalka D | (10-10) ± 5.0° | (10-10) ± 5.0° |
| Dhererka Fidsan ee Aasaasiga ah | Fasalka Z / Fasalka D | 32.5 mm ± 2.0 mm | Qaylo-dhaan |
| Dhererka Fidsan ee Labaad | Fasalka Z / Fasalka D | 18.0 mm ± 2.0 mm | - |
| Ka-saarista Geesaha | Fasalka Z / Fasalka D | 3 mm | 3 mm |
| LTV / TTV / Qaanso / Warp | Heerka Z | ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm | ≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm |
| Darajada D | ≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm | ≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm | |
| Qallafsanaan | Heerka Z | Boolish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm | Boolish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm |
| Darajada D | Boolish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm | Boolish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm | |
| Dildilaaca Edge | Darajada D | Aagga wadarta ah ≤ 0.1% | Dhererka wadarta ≤ 20 mm, hal ≤ 2 mm |
| Meelaha Nooca Polytype-ka ah | Darajada D | Aagga wadarta ≤ 0.3% | Aagga wadarta ≤ 3% |
| Kaarboonka Muuqaalka ah | Heerka Z | Aagga wadarta ah ≤ 0.05% | Aagga wadarta ah ≤ 0.05% |
| Darajada D | Aagga wadarta ≤ 0.3% | Aagga wadarta ≤ 3% | |
| Xoqashada dusha sare ee silikoon | Darajada D | 5 la oggol yahay, midkiiba ≤1mm | Dhererka wadarta ≤ 1 x dhexroor |
| Chips-ka Edge | Heerka Z | Lama oggola (ballaca iyo qoto dheerka ≥0.2mm) | Lama oggola (ballaca iyo qoto dheerka ≥0.2mm) |
| Darajada D | 7 la oggol yahay, midkiiba ≤1mm | 7 la oggol yahay, midkiiba ≤1mm | |
| Kala-baxa Boorsooyinka Toosan | Heerka Z | - | ≤ 500 cm² |
| Baakadaha | Fasalka Z / Fasalka D | Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah | Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah |
Adeegyada XKH: Awoodaha Wax Soo Saarka iyo Habaynta ee Isku-dhafan
Shirkadda XKH waxay leedahay awoodo is-dhexgal toosan laga bilaabo walxaha ceeriin ilaa buskudyada la dhammeeyay, waxayna daboolaysaa silsiladda oo dhan ee koritaanka substrate-ka SiC, jarista, nadiifinta, iyo habaynta gaarka ah. Faa'iidooyinka adeegga ee muhiimka ah waxaa ka mid ah:
- Kala duwanaanshaha Agabka:Waxaan bixin karnaa noocyo kala duwan oo wafer ah sida nooca 4H-N, nooca 4H-HPSI, nooca 4H/6H-P, iyo nooca 3C-N. Iska caabinta, dhumucda, iyo jihada waa la hagaajin karaa iyadoo loo eegayo shuruudaha.
- ;Habaynta Cabbirka Dabacsan:Waxaan taageernaa habaynta wafer-ka laga bilaabo dhexroorka 2-inji ilaa 12-inji, waxaana sidoo kale farsamayn karnaa qaab-dhismeedyo gaar ah sida qaybo afargeesle ah (tusaale ahaan, 5x5mm, 10x10mm) iyo bismiyaal aan caadi ahayn.
- Xakamaynta Saxnaanta Heerka Indhaha:Kala duwanaanshaha Dhumucda Wafer (TTV) waxaa lagu hayn karaa <1μm, iyo qallafsanaanta dusha sare ee Ra < 0.3 nm, iyadoo la buuxinayo shuruudaha fidsan ee heerka nano-ga ee aaladaha hagaha hirarka.
- Jawaabta Suuqa Degdegga ah:Qaabka ganacsi ee isku dhafan wuxuu hubiyaa kala-guur hufan oo ka yimaada R&D ilaa wax soo saar ballaaran, isagoo taageeraya wax walba laga bilaabo xaqiijinta dufcad yar ilaa rarida mugga weyn (waqtiga hogaaminta badanaa waa 15-40 maalmood).

Su'aalaha Inta Badan La Isweydiiyo ee Wafer-ka HPSI SiC
S1: Maxaa HPSI SiC loogu arkaa agab ku habboon muraayadaha hagaha AR?
A1: Tusmada sare ee dhalaalaysa (2.6–2.7) waxay suurtogal ka dhigaysaa qaab-dhismeedyada hagaha hirarka ee khafiifka ah oo waxtar badan leh kuwaas oo taageera aragti ballaaran (tusaale ahaan, 70°–80°) iyadoo meesha ka saaraysa "saamaynta qaanso roobaadka".
S2: Sidee buu HPSI SiC u hagaajiyaa maaraynta kulaylka ee muraayadaha AI/AR?
A2: Iyada oo leh kuleyl gudbin ah ilaa 490 W/m·K (oo u dhow naxaasta), waxay si hufan u kala dirtaa kulaylka qaybaha sida Micro-LEDs, taasoo hubinaysa waxqabad deggan iyo cimri dheer oo qalabka ah.
S3: Waa maxay faa'iidooyinka waara ee HPSI SiC ay bixiso muraayadaha la xiran karo?
A3: Adkaynteeda aan caadiga ahayn (Mohs 9.5) waxay bixisaa iska caabin xoqid oo heer sare ah, taasoo ka dhigaysa mid aad u waara oo loogu talagalay isticmaalka maalinlaha ah ee muraayadaha AR-ga ee heerka macaamiisha.













