Wafer nooca P-nooca ah SiC 4H/6H-P 3C-N 6 inji dhumucdiisuna tahay 350 μm oo leh Jiho Fidsan oo Aasaasi ah
Faahfaahinta Nooca 4H/6H-P Substrates Isku-dhafan SiC Shaxda halbeegga guud
6 Dhexroor inji ah Substrate Silicon Carbide (SiC) Faahfaahinta
| Fasal | Wax soo saar eber MPD ahDarajada (Z) Darajada) | Waxsoosaarka Caadiga ahDarajada (P) Darajada) | Fasalka Madow (D Darajada) | ||
| Dhexroorka | 145.5 mm ~ 150.0 mm | ||||
| Dhumucda | 350 μm ± 25 μm | ||||
| Jihaynta Wafer-ka | -Offdhidibka: 2.0°-4.0° dhanka [1120] ± 0.5° ee 4H/6H-P, dhidibka saaran: 〈111〉± 0.5° ee 3C-N | ||||
| Cufnaanta Tuubooyinka Yaryar | 0 cm-2 | ||||
| Iska caabin | nooca p-nooca 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| nooca n-nooca 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Jihada Fidsan ee Aasaasiga ah | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ± 2.0 mm | ||||
| Dhererka Fidsan ee Labaad | 18.0 mm ± 2.0 mm | ||||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW. laga bilaabo Prime flat ± 5.0° | ||||
| Ka-saarista Cidhifka | 3 mm | 6 mm | |||
| LTV/TTV/Qaanso/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Qalafsanaan | Boolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Dhererka wadarta ≤ 10 mm, dherer hal ≤2 mm | |||
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% | |||
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadajirka ah≤3% | |||
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |||
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ≤1 × dhexroorka wafer | |||
| Chips-ka Geesaha Sare ee Iftiinka Xoogga leh | Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm | 5 la oggol yahay, ≤1 mm midkiiba | |||
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Xoog Sare | Midna ma jiro | ||||
| Baakad | Cajalad badan oo wafer ah ama Weel Wafer Hal ah | ||||
Qoraalo:
※ Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. # Xoqashada waa in lagu hubiyaa wejiga Si o
Wafer-ka nooca P-type SiC, 4H/6H-P 3C-N, oo leh cabbirkiisa 6-inji iyo dhumucdiisuna tahay 350 μm, ayaa door muhiim ah ka ciyaara wax soo saarka warshadaha ee elektaroonigga awoodda sare leh. Gudbinta kulaylka ee aadka u fiican iyo danab jabitaan oo sarreeya ayaa ka dhigaya mid ku habboon soo saarista qaybaha sida badhamada korontada, diode-yada, iyo transistors-ka loo isticmaalo jawiga heerkulka sare sida baabuurta korontada, shabakadaha korontada, iyo nidaamyada tamarta la cusboonaysiin karo. Awoodda wafer-ku uu si hufan ugu shaqeeyo xaaladaha adag waxay hubisaa waxqabad la isku halleyn karo oo ku saabsan codsiyada warshadaha ee u baahan cufnaanta awoodda sare iyo hufnaanta tamarta. Intaa waxaa dheer, jihada fidsan ee aasaasiga ah waxay ka caawisaa isku-dubbaridka saxda ah inta lagu jiro wax-soo-saarka qalabka, iyadoo kor u qaadaysa hufnaanta wax-soo-saarka iyo isku-dheellitirka alaabta.
Faa'iidooyinka substrates-ka isku-dhafka ah ee N-type SiC waxaa ka mid ah
- Qaboojinta Kulaylka Sare: Wafer-yada nooca P-type SiC waxay si hufan u baabi'iyaan kulaylka, taasoo ka dhigaysa kuwo ku habboon isticmaalka heerkulka sare.
- Danab Jaban oo SareAwood u leh inay u adkeysato danabyada sare, hubinta isku halaynta qalabka elektarooniga korontada iyo aaladaha danabyada sare leh.
- Iska caabbinta Deegaannada Adag: Waara oo aad u wanaagsan xaaladaha daran, sida heerkulka sare iyo deegaannada daxalka leh.
- Beddelidda Awoodda Waxtarka leh: Nooca P-ga ah ee daawada ayaa sahlaya maaraynta awoodda oo hufan, taasoo ka dhigaysa wafer-ka mid ku habboon nidaamyada beddelka tamarta.
- Jihada Fidsan ee Aasaasiga ah: Waxay hubisaa isku-xirnaan sax ah inta lagu jiro wax-soo-saarka, iyadoo hagaajinaysa saxnaanta qalabka iyo joogtaynta.
- Qaab-dhismeed Khafiif ah (350 μm)Dhumucda ugu fiican ee waferku waxay taageertaa isdhexgalka aaladaha elektarooniga ah ee casriga ah, ee booska xaddidan.
Guud ahaan, nooca P-type SiC wafer, 4H/6H-P 3C-N, wuxuu bixiyaa faa'iidooyin kala duwan oo ka dhigaya mid aad ugu habboon codsiyada warshadaha iyo elektaroonigga ah. Koronto-qaadisteeda kulaylka sare iyo danab-jabkeedu waxay suurtogal ka dhigaysaa hawlgal la isku halleyn karo oo ka dhaca jawiyada heerkulka sare iyo danab-sare, halka iska caabinteeda xaaladaha adag ay hubinayso waarta. Nooca P-type doping wuxuu u oggolaanayaa beddelka awoodda wax ku oolka ah, taasoo ka dhigaysa mid ku habboon nidaamyada elektaroonigga korontada iyo tamarta. Intaa waxaa dheer, jihada fidsan ee aasaasiga ah ee waferku waxay hubisaa isku-dheellitir sax ah inta lagu jiro habka wax soo saarka, taasoo kor u qaadaysa isku-dheellitirka wax soo saarka. Iyada oo dhumucdeedu tahay 350 μm, si fiican ayay ugu habboon tahay is-dhexgalka aaladaha horumarsan oo is haysta.
Jaantus Faahfaahsan
