Substrate-ka SiC nooca P-type 4H/6H-P 3C-N 4 inji oo dhumucdiisu tahay 350um Heerka wax soo saarka Heerka been abuurka ah
Shaxda halbeegga 3C-N ee 4-inji ah ee SiC
4 dhexroor inji ah oo ah silikoonSubstrate-ka Karbide (SiC) Faahfaahinta
| Fasal | Wax soo saar eber MPD ah Darajada (Z) Darajada) | Waxsoosaarka Caadiga ah Darajada (P) Darajada) | Fasalka Madow (D Darajada) | ||
| Dhexroorka | 99.5 mm ~ 100.0 mm | ||||
| Dhumucda | 350 μm ± 25 μm | ||||
| Jihaynta Wafer-ka | Dhidibka ka baxsan: 2.0°-4.0° dhanka [11]20] ± 0.5° ee 4H/6H-P, Odhidibka n:〈111〉± 0.5° ee 3C-N | ||||
| Cufnaanta Tuubooyinka Yaryar | 0 cm-2 | ||||
| Iska caabin | nooca p-nooca 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| nooca n-nooca 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Jihada Fidsan ee Aasaasiga ah | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ± 2.0 mm | ||||
| Dhererka Fidsan ee Labaad | 18.0 mm ± 2.0 mm | ||||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW. laga bilaabo Prime flat±5.0° | ||||
| Ka-saarista Cidhifka | 3 mm | 6 mm | |||
| LTV/TTV/Qaanso/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Qalafsanaan | Boolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Dhererka wadarta ≤ 10 mm, dherer hal ≤2 mm | |||
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% | |||
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadajirka ah≤3% | |||
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |||
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ≤1 × dhexroorka wafer | |||
| Chips-ka Geesaha Sare ee Iftiinka Xoogga leh | Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm | 5 la oggol yahay, ≤1 mm midkiiba | |||
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Xoog Sare | Midna ma jiro | ||||
| Baakad | Cajalad badan oo wafer ah ama Weel Wafer Hal ah | ||||
Qoraalo:
※Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. # Xoqashada waa in lagu hubiyaa wejiga Si oo keliya.
Substrate-ka P-nooca 4H/6H-P 3C-N 4-inji SiC oo dhumucdiisu tahay 350 μm ayaa si weyn loogu adeegsadaa wax soo saarka qalabka elektaroonigga ah iyo korontada ee horumarsan. Iyada oo leh koronto-qaadis heer sare ah, danab jabitaan oo sarreeya, iyo iska caabin xooggan oo ka dhan ah deegaannada ba'an, substrate-kani wuxuu ku habboon yahay qalabka elektaroonigga ah ee waxqabadka sare leh sida badhanka danab sare, qalabka wax lagu beddelo, iyo aaladaha RF. Substrate-ka heerka wax soo saarka waxaa loo isticmaalaa wax soo saarka baaxadda weyn, iyadoo la hubinayo waxqabadka qalabka ee la isku halleyn karo, saxnaanta sare leh, kaas oo muhiim u ah qalabka elektaroonigga korontada iyo codsiyada soo noqnoqda sare leh. Substrate-ka heerka-dummy-ka ah, dhanka kale, waxaa inta badan loo isticmaalaa hagaajinta habka, tijaabinta qalabka, iyo horumarinta tusaalaha, taasoo gacan ka geysaneysa ilaalinta xakamaynta tayada iyo isku-dheellitirka habka wax soo saarka semiconductor-ka.
FaahfaahinFaa'iidooyinka substrate-ka isku-dhafka ah ee N-type SiC waxaa ka mid ah
- Qaboojinta Kulaylka SareKala firdhinta kulaylka oo hufan ayaa ka dhigaysa substrate-ka mid ku habboon codsiyada heerkulka sare iyo kuwa awoodda sare leh.
- Danab Jaban oo Sare: Waxay taageertaa hawlgalka danab-sare, iyadoo hubinaysa isku halaynta qalabka elektaroonigga korontada iyo aaladaha RF.
- Iska caabbinta Deegaannada Adag: Waa mid waara xaaladaha daran sida heerkulka sare iyo deegaannada daxalka leh, taasoo hubinaysa waxqabad waara.
- Saxnaanta Heerka Wax-soo-saarka: Waxay hubisaa waxqabad tayo sare leh oo lagu kalsoonaan karo oo ku saabsan wax soo saarka baaxadda weyn, oo ku habboon codsiyada korontada horumarsan iyo RF.
- Darajada Qaladka ah ee Imtixaanka: Waxay suurtogal ka dhigaysaa habaynta saxda ah ee habka, tijaabinta qalabka, iyo tijaabinta qaab-dhismeedka iyada oo aan wax u dhimayn wafer-ka heerka wax-soo-saarka.
Guud ahaan, substrate-ka P-nooca 4H/6H-P 3C-N 4-inji SiC oo dhumucdiisu tahay 350 μm wuxuu bixiyaa faa'iidooyin muhiim ah oo loogu talagalay codsiyada elektaroonigga ah ee waxqabadka sare leh. Qaboojinta kulaylka sare iyo danabkiisa burburka ayaa ka dhigaya mid ku habboon jawiga awoodda sare iyo heerkulka sare leh, halka iska caabintiisa xaaladaha adag ay hubinayso cimri dherer iyo isku hallayn. Substrate-ka heerka wax soo saarka wuxuu hubiyaa waxqabad sax ah oo joogto ah oo ku saabsan wax soo saarka baaxadda weyn ee qalabka elektaroonigga awoodda leh iyo aaladaha RF. Dhanka kale, substrate-ka heerka-qashinka ah waa lama huraan u ah hagaajinta habka, tijaabinta qalabka, iyo tijaabinta qaab-dhismeedka, taageeridda xakamaynta tayada iyo joogtaynta wax soo saarka semiconductor-ka. Astaamahani waxay ka dhigayaan substrate-ka SiC kuwo aad u kala duwan codsiyada horumarsan.
Jaantus Faahfaahsan
