Substrate-ka SiC P-nooca 4H/6H-P 3C-N 4inch leh dhumucdiisuna tahay 350um heerka wax soo saarka

Sharaxaad Gaaban:

Nooca P-nooca 4H/6H-P 3C-N 4-inch SiC substrate, oo leh dhumucdiisuna tahay 350 μm, waa wax-qabad heersare ah oo semiconductor ah oo si ballaaran loogu isticmaalo soosaarka aaladaha elektiroonigga ah. Lagu yaqaan kulaylkeeda gaarka ah, korantada burburka sareeysa, iyo iska caabinta heerkulka aadka u daran iyo bay'ada daxaleysiga ah, substrate-kani wuxuu ku fiican yahay codsiyada korantada elektiroonigga ah. Substrate-ka-soo-saarka waxaa loo isticmaalaa wax soo saarka ballaaran, hubinta xakamaynta tayada adag iyo kalsoonida sare ee qalabka elektiroonigga ah ee horumarsan. Dhanka kale, substrate-ka-dulmiga ayaa ugu horrayn loo adeegsadaa habsocod-dejinta, habaynta qalabka, iyo wax-soo-saarka. Guryaha sare ee SiC waxay ka dhigaan doorasho aad u wanaagsan aaladaha ku shaqeeya heerkulka sare, korantada sare, iyo jawiga soo noqnoqda, oo ay ku jiraan aaladaha korantada iyo nidaamyada RF.

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4inch substrate SiC P-nooca 4H/6H-P 3C-N miiska cabirka

4 dhexroorka inch SiliconSubstrate-ka Carbide (SiC). Tilmaamid

Darajo			Wax soo saarka MPD eber Darajada (Z Darajo)	Wax soo saarka caadiga ah Darajada (P Darajo)	Dummy Fasalka (D Darajo)
Dhexroorka			99.5 mm ~ 100.0 mm
Dhumucda			350 μm ± 25 μm
Hanuuninta Wafer			dhidibka ka baxsan: 2.0°-4.0° dhanka [112(-)0] ± 0.5° loogu talagalay 4H/6H-P, On dhidibka:〈111〉± 0.5° ee 3C-N
Cufnaanta Dheef-yar			0 cm-2
iska caabin	p-nooca 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nooca 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Hanuuninta Flat Primary		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Dhererka Guriga aasaasiga ah			32.5 mm ± 2.0 mm
Dhererka Guriga Sare			18.0 mm ± 2.0 mm
Hanuuninta Guriga Sare			Silicon weji kor ah: 90° CW. ka yimid dabaqa Prime±5.0°
Ka saarida gees			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare			Midna		Dhererka isugeynta ≤ 10 mm, hal dherer≤2 mm
Taarikada Hex By Iftiin Xoogan Sare			Aagga wadarta ≤0.05%		Aagga isugeynta ≤0.1%
Meelo Badan Oo Iftiin Xoogan Sare leh			Midna		Aagga isugeynta≤3%
Kaarboon Muuqaal ah			Aagga wadarta ≤0.05%		Aagga isugeynta ≤3%
Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare			Midna		Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifka Sare ee Iftiinka Xooga			Midna lama oggola ≥0.2mm ballac iyo qoto dheer		5 waa la ogol yahay, ≤1 mm midkiiba
Wasakhaynta Silikoonka Dusha Sare ee Xooggiisa			Midna
Baakadaha			Cassette Multi-wafer ah ama Konteenar Wafer Keliya ah

Xusuusin:

※ Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. # xagashada waa in lagu fiiriyaa wejiga Si kaliya.

Nooca P-nooca 4H/6H-P 3C-N 4-inch SiC substrate oo leh dhumucdiisuna tahay 350 μm ayaa si ballaaran loogu dabaqay soosaarka qalabka korantada ee horumarsan. Iyada oo leh koronto kuleyl heer sare ah, koronto jabin sare leh, iyo iska caabin adag oo deegaanka aadka u daran, substrate-kani wuxuu ku habboon yahay korantada waxqabadka sare leh sida furayaasha korantada sare, rogayaasha, iyo aaladaha RF. Substrate-ka-soo-saarka waxaa loo isticmaalaa wax soo saar ballaaran, hubinta la isku halayn karo, waxqabadka qalabka saxda ah, kaas oo muhiim u ah korantada elektiroonigga ah iyo codsiyada soo noqnoqda. Dummy-fasalka, dhinaca kale, waxaa inta badan loo isticmaalaa habaynta habraaca, tijaabinta qalabka, iyo horumarinta prototype, ka caawinta ilaalinta tayada tayada iyo habka joogtaynta wax soo saarka semiconductor.

Tilmaamaha Faa'iidooyinka N-nooca SiC ee ka kooban substrate-ka waxaa ka mid ah

Dhaqdhaqaaqa Kuleylka Sare: Kuleylka wax ku oolka ah ee kuleylku wuxuu ka dhigayaa substrate ku habboon codsiyada heerkulka sare iyo awoodda sare.
Korontada Burburka Sare: Waxay taageertaa hawlgalka korantada sare, hubinta isku halaynta korantada korantada iyo aaladaha RF.
Iska caabinta Degaanada Adag: Ku waara xaaladaha aadka u daran sida heerkulka sare iyo deegaanka daxalka, hubinta waxqabadka muddada dheer.
Wax-soo-saarka- Saxnaanta Darajada: Waxay hubisaa tayada sare iyo waxqabadka lagu kalsoonaan karo ee wax soo saarka ballaaran, oo ku habboon awoodda sare iyo codsiyada RF.
Dummy-Fasalka Imtixaanka: Waxay sahlaysa habaynta saxda ah ee habka saxda ah, tijaabinta qalabka, iyo prototyping iyada oo aan wax u dhimayn waferrada heerka-soo-saarka.

Guud ahaan, nooca P-nooca 4H/6H-P 3C-N 4-inch SiC substrate leh dhumucdiisuna tahay 350 μm waxay bixisaa faa'iidooyin la taaban karo oo loogu talagalay codsiyada elektarooniga ah ee waxqabadka sarreeya. Heerkulkeeda sare ee kuleylka iyo korantada burburka ayaa ka dhigaysa mid ku habboon jawiga tamarta sare iyo heerkulka sare, halka iska caabbinta xaaladaha adag ay hubiso adkeysiga iyo isku halaynta. Substrate-ka-soo-saarka ayaa hubiya waxqabadka saxda ah ee joogtada ah ee wax-soo-saarka baaxadda leh ee korantada elektiroonigga ah iyo aaladaha RF. Dhanka kale, substrate-ka-dulmiga ayaa lama huraan u ah habaynta habraaca, tijaabinta qalabka, iyo samaynta, taageeridda xakamaynta tayada iyo joogtaynta wax-soo-saarka semiconductor. Tilmaamahani waxay ka dhigaan substrate-yada SiC mid aad ugu wanagsan codsiyada horumarsan.