P-nooca SiC wafer 4H/6H-P 3C-N 6inch dhumucdiisuna tahay 350 μm oo leh Hanuuninta Flat Aasaasiga ah

P-nooca SiC wafer 4H/6H-P 3C-N 6inch dhumucdiisuna tahay 350 μm oo leh Sawirka Hanuuninta Guriga Aasaasiga ah

Sharaxaad Gaaban:

Waferka nooca P-ga ee SiC, 4H/6H-P 3C-N, waa 6-inch semiconductor walxo leh dhumucdiisuna tahay 350 μm iyo jihaynta guri aasaasiga ah, looguna talagalay codsiyada sare ee elektiroonigga ah. Waxaa lagu yaqaanaa kuleylkeeda sare, danab burbursan oo sarreeya, iyo iska caabbinta heerkulka aadka u daran iyo bay'ada daxaleysiga ah, waferkan ayaa ku habboon aaladaha elektiroonigga ah ee waxqabadka sarreeya. Doping-ga nooca P-ga ah wuxuu soo bandhigayaa godadka sida qaadayaasha aasaasiga ah, taasoo ka dhigaysa mid ku habboon qalabka elektiroonigga ah iyo codsiyada RF. Qaab dhismeedkeeda adag waxay hubisaa waxqabadka xasilloon ee hoos yimaada xaaladaha korantada iyo heerka sare, taasoo ka dhigaysa mid ku habboon aaladaha korantada, heerkulka sare ee elektiroonigga ah, iyo beddelka tamarta waxtarka leh. Hanuuninta guri ee aasaasiga ah waxay hubisaa toosinta saxda ah ee habka wax soo saarka, iyadoo siinaya joogtaynta qalabaynta.

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Tags Product

Specification4H/6H-P Nooca SiC Substrates Composite Substrates Shaxda cabbirka guud

6 Dhexroor inch Silicon Carbide (SiC) Substrate Tilmaamid

Darajo			Wax soo saarka MPD eberDarajada (Z Darajo)	Wax soo saarka caadiga ahDarajada (P Darajo)	Dummy Fasalka (D Darajo)
Dhexroorka			145.5 mm ~ 150.0 mm
Dhumucda			350 μm ± 25 μm
Hanuuninta Wafer			-Offdhidibka: 2.0°-4.0° dhanka [1120] ± 0.5° ee 4H/6H-P, On dhidibka:〈111〉± 0.5° ee 3C-N
Cufnaanta Dheef-yar			0 cm-2
iska caabin	p-nooca 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nooca 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Hanuuninta Flat Primary		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Dhererka Guriga aasaasiga ah			32.5 mm ± 2.0 mm
Dhererka Guriga Sare			18.0 mm ± 2.0 mm
Hanuuninta Guriga Sare			Silicon weji kor ah: 90° CW. Laga soo bilaabo dabaqa Prime ± 5.0°
Ka saarida gees			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare			Midna		Dhererka isugeynta ≤ 10 mm, hal dherer≤2 mm
Taarikada Hex By Iftiin Xoogan Sare			Aagga wadarta ≤0.05%		Aagga isugeynta ≤0.1%
Meelo Badan Oo Iftiin Xoogan Sare leh			Midna		Aagga isugeynta≤3%
Kaarboon Muuqaal ah			Aagga wadarta ≤0.05%		Aagga isugeynta ≤3%
Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare			Midna		Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifka Sare ee Iftiinka Xooga			Midna lama oggola ≥0.2mm ballac iyo qoto dheer		5 waa la ogol yahay, ≤1 mm midkiiba
Wasakhaynta Silikoonka Dusha Sare ee Xooggiisa			Midna
Baakadaha			Cassette Multi-wafer ah ama Konteenar Wafer Keliya ah

Xusuusin:

※ Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. # xagashada waa in lagu fiiriyaa si wejiga o

Wafer-ka nooca P-SiC, 4H/6H-P 3C-N, oo leh cabbirkeeda 6-inch iyo dhumucdiisuna tahay 350 μm, ayaa door muhiim ah ka ciyaarta wax-soo-saarka warshadaha ee korantada awoodda-sare leh. Kuleylkeeda heerkuleed ee aad u wanaagsan iyo korantada sare ee burburka ayaa ka dhigaysa mid ku habboon wax soo saarka sida furayaasha korantada, diodes, iyo transistor-yada loo isticmaalo jawiga heerkulka sare sida gawaarida korantada, korantada, iyo nidaamyada tamarta la cusboonaysiin karo. Awoodda waferka ee si hufan ugu shaqeysa xaaladaha adag waxay hubisaa waxqabadka la isku halayn karo ee codsiyada warshadaha u baahan cufnaanta awoodda sare iyo hufnaanta tamarta. Intaa waxaa dheer, jiheynta gurigeeda aasaasiga ah waxay ka caawisaa toosinta saxda ah inta lagu jiro samaynta aaladda, kor u qaadida waxtarka wax soo saarka iyo joogtaynta alaabta.

Faa'iidooyinka N-nooca SiC-hoosaadka isku-dhafka ah waxaa ka mid ah

Dhaqdhaqaaqa Kuleylka Sare: Waferrada nooca P-ga ee SiC ayaa si hufan u daadiya kulaylka, iyaga oo ka dhigaya kuwo ku habboon codsiyada heerkulka sare.
Korontada Burburka SareAwood u leh in uu u adkeysto koronto sare, hubinta isku halaynta korantada elektiroonigga ah iyo aaladaha tamarta sare leh.
Iska caabinta Degaanada Adagadkeysi heer sare ah marka lagu jiro xaalado aad u daran, sida heerkul sare iyo deegaan daxaloolsan.
Beddelka Awood Waxtarka lehDoping-ga nooca P wuxuu fududeeyaa maaraynta awoodda wax ku oolka ah, taasoo ka dhigaysa waferka ku habboon hababka beddelka tamarta.
Hanuuninta Flat Primary: Waxay xaqiijisaa toosinta saxda ah inta lagu jiro wax soo saarka, hagaajinta saxnaanta qalabka iyo joogtaynta.
Qaab dhismeedka khafiifka ah (350 μm)Dhumucdiisuna waxay taageertaa is dhexgalka horumarsan, qalab elektaroonik ah oo meel xaddidan.

Guud ahaan, waferka nooca P-nooca SiC, 4H/6H-P 3C-N, waxay bixisaa faa'iidooyin kala duwan oo ka dhigaya mid aad ugu habboon codsiyada warshadaha iyo elektiroonigga ah. Heerkulkeeda sare ee kuleylka iyo korantada burburka waxay awood u siineysaa hawlgal lagu kalsoonaan karo oo ku yaal jawi heerkul sare iyo heer sare ah, halka iska caabinteeda xaaladaha adag ay xaqiijineyso waarta. Doping-ga nooca P wuxuu u oggolaanayaa beddelaad koronto oo hufan, taas oo ka dhigaysa mid ku habboon tamarta korantada iyo nidaamyada tamarta. Intaa waxaa dheer, hanuuninta guriyeedka aasaasiga ah ee waferku waxa ay hubisaa toosinta saxda ah inta lagu jiro habka wax soo saarka, iyada oo kor u qaadeysa joogtaynta wax soo saarka. Iyada oo dhumucdiisu tahay 350 μm, waxay si fiican ugu habboon tahay la dhexgalka aaladaha horumarsan ee is haysta.