Qalabka khafiifka ah ee Wafer ee 4 inch-12 inch Sapphire/SiC/Si Wafers Processing

Sharaxaad Gaaban:

Qalabka khafiifka ah ee Wafer waa aalad muhiim u ah soosaarka semiconductor si loo yareeyo dhumucda waferka si kor loogu qaado maaraynta kulaylka, waxqabadka korantada, iyo hufnaanta baakadaha. Qalabkani waxa uu shaqaaleeyaa shiidida makaanikada, nadiifinta farsamada kiimikada (CMP), iyo tignoolajiyada etching etching qalalan/qoyan si loo gaadho xakamaynta dhumucda saxda ah ee saxda ah (± 0.1 μm) iyo waafaqid 4-12-inch wafers. Nidaamyadayadu waxay taageeraan jihaynta diyaaradda C/A waxaana loogu talagalay codsiyada horumarsan sida 3D ICs, aaladaha korantada (IGBT/MOSFETs), iyo dareemayaasha MEMS.

XKH waxay bixisaa xalal buuxa, oo ay ku jiraan qalab la habeeyey (2-12-inch wafer processing), hagaajinta habka (cufnaanta cilladda <100/cm²), iyo tababar farsamo.

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Mabda'a Shaqada

Habka khafiifinta waferku wuxuu u shaqeeyaa saddex marxaladood:
Shiidin qallafsan: Shaagagga dheemanka ah ( cabbirka 200-500 μm) wuxuu ka saarayaa 50-150 μm walxaha 3000-5000 rpm si degdeg ah loo yareeyo dhumucda.
Shiidin Fiican: Taayir yar oo khafiif ah (xajmiga gogosha 1-50 μm) wuxuu yareeyaa dhumucda ilaa 20-50 μm marka loo eego <1 μm/s si loo yareeyo burburka dhulka hoose.
Polishing (CMP): Biyo-mareen kiimiko-farsamo ah ayaa baabi'iya burburka haraaga ah, gaaritaanka Ra <0.1 nm.

Qalab ku habboon

Silikoon (Si): Halbeegga waferrada CMOS, oo la khafiifiyay ilaa 25 μm ee isku dhafka 3D.
Silicon Carbide (SiC): Waxay u baahan tahay taayirrada dheemanka gaarka ah (80% dheemanka dheemanka) xasilloonida kuleylka.
Sapphire (Al₂O₃): La khafiifiyay ilaa 50 μm ee codsiyada UV LED.

Qaybaha Nidaamka Muhiimka ah

1. Nidaamka wax shiida
Furaha Dual-Axis: Wuxuu isku daraa shiidid qallafsan/fiicnaan leh oo hal madal ah, taasoo yaraynaysa wakhtiga wareegga 40%.
Spindle Aerostatic: 0-6000 rpm kala duwanaansho xawli ah oo leh <0.5 μm radial runout.

2. Nidaamka Maareynta Wafer
Vacuum Chuck:> 50 N xoog haynta leh ± 0.1 μm saxnaanta meelaynta.
Cududda Robotic: Waxay ku raridaa 4-12-inch wafers at 100 mm/s.

3. Nidaamka xakamaynta
Interferometry Laser: La socodka dhumucda wakhtiga-dhabta ah (xalka 0.01 μm).
Feedforward-ka AI-Driven: Wuxuu saadaaliyaa xirashada taayirrada oo si toos ah u hagaajiya cabbirrada.

4. Qaboojinta & Nadiifinta
Nadiifinta Ultrasonic: Waxay ka saartaa walxaha>0.5 μm oo leh 99.9% hufnaan.
Biyaha Deionized: Qaboojiya maraqa ilaa <5°C oo ka sarreeya jawiga.

Faa'iidooyinka Muhiimka ah

1. Saxnimada aadka u saraysa: TTV (Guud ahaan kala duwanaanshiyaha dhumucda) <0.5 μm, WTW (Kala duwanaanshaha Dhumucda Wafer dhexdeeda) <1 μm.

2. Isku-dhafka Hab-raaca Badan: Isku-dubbarididda, CMP, iyo etching balaasmaha ee hal mashiin.

3. Waafaqsanaanta Shayga:
Silikoon: Dhimista dhumucda 775 μm ilaa 25 μm.
SiC: Waxay ku guulaysataa <2 μm TTV ee codsiyada RF.
Wafers Doped: Fosfooraska-doped InP wafers oo leh <5% iska caabin ah.

4. Smart Automation: Is dhexgalka MES wuxuu yareeyaa qaladka aadanaha 70%.

5. Waxtarka Tamarta: 30% isticmaalka korantada oo hooseysa iyada oo loo marayo braking dib u soo kicinta.

Codsiyada Muhiimka ah

1. Baakaynta horumarsan
• 3D ICs: khafiifinta Waferku waxa ay sahlaysa in si toosan loo xidho chips-ga macquulka/xasuusta (tusaale, xidhmooyin HBM), gaaritaanka 10 × bandwidth sare iyo 50% hoos u dhaca isticmaalka awooda marka la barbar dhigo xalalka 2.5D. Qalabku wuxuu taageeraa isku-xidhka isku-dhafka ah iyo TSV (Iyadoo-Silicon Via) is dhexgalka, oo muhiim u ah soo-saareyaasha AI/ML ee u baahan <10 μm garoonka isku-xirnaanta. Tusaale ahaan, waferrada 12-inji ah oo la khafiifiyay ilaa 25 μm waxay u oggolaanayaan in la isku dhejiyo 8+ lakab iyadoo la ilaalinayo <1.5% bogga dagaalka, oo lagama maarmaan u ah nidaamyada LiDAR baabuurta.

• Xirmooyinka Taageerada: Iyada oo la dhimayo dhumucda wafer ilaa 30 μm, dhererka isku xidhka ayaa la soo gaabiyay 50%, iyadoo la yaraynayo daahitaanka signalka (<0.2 ps/mm) oo awood u siinaya 0.4mm chiplets aadka u khafiifka ah ee SoC-yada mobilada. Nidaamku wuxuu ka faa'iidaysanayaa algorithms-shiidida culeyska culeyska si looga hortago warpage (> 50 μm TTV control), hubinta isku halaynta codsiyada RF-sare ee soo noqnoqda.

2. Korontada Elektarooniga ah
• Modules IGBT: Khafiifinta ilaa 50 μm waxay yaraynaysaa caabbinta kulaylka ilaa <0.5°C/W, taas oo u sahlaysa 1200V SiC MOSFETs inay ku shaqeeyaan heerkulka isgoysyada 200°C. Qalabkeenu waxa uu shaqeeyaa shiidi heerar kala duwan (qaracan: 46 μm grit → ganaax: 4 μm grit) si loo baabi'iyo waxyeelada dusha sare, gaaritaanka> 10,000 wareegyada isku halaynta baaskiil wadida. Tani waxay muhiim u tahay rogayaasha EV, halkaas oo 10 μm dhumucdiisuna SiC wafer ay hagaajiyaan xawaaraha beddelka 30% .
• Qalabka Korantada ee GaN-on-SiC: khafiifinta wafer ilaa 80 μm waxay wanaajisaa dhaqdhaqaaqa elektaroonigga ah (μ> 2000 cm²/V·s) ee 650V GaN HEMTs, hoos u dhigista khasaaraha korantada 18%. Nidaamku waxa uu isticmaalaa dicing-ka caawiya laser-ka si looga hortago dildilaaca inta lagu jiro khafiifinta, gaaritaanka <5 μm cidhifyada cidhifka ee cod-weyneyaasha RF.

3. Optoelectronics
• GaN-on-SiC LEDs: 50 μm sapphire substrates waxay hagaajiyaan waxtarka soo saarista iftiinka (LEE) ilaa 85% (marka laga reebo 65% ee 150 μm wafers) iyadoo la yareynayo dabinka sawir-qaadista. Qalabkayaga kontoroolka TTV ee aadka u hooseeya (<0.3 μm) wuxuu xaqiijiyaa qiiqa LED-ka ee isku midka ah ee dhex dhexaadinta 12-inch, oo muhiim u ah bandhigyada Micro-LED ee u baahan lebbiska mawjada dhererka <100nm.
• Silikoon Photonics: Waferrada silikoon ee dhumucdiisu tahay 25μm waxay awood u siinaysaa 3 dB/cm luminta faafinta hoose ee hagaha mawjadaha, lama huraanka u ah 1.6 Tbps transceivers indhaha. Nidaamku waxa uu isku daraa simay CMP si loo yareeyo qallafsanaanta dusha sare ilaa Ra <0.1 nm, iyada oo kor u qaadaysa waxtarka isku xidhka 40%.

4. Dareemayaasha MEMS
• Xawaareyaal: 25 μm waferrada silikoon waxay gaadhaan SNR>85 dB (marka loo eego 75 dB ee 50 μm wafers) iyadoo kordhinaysa dareenka barakaca caddaynta. Nidaamkeena shiidida dhidibada laba-geesoodka ah ayaa magdhow u ah culeysyada walbahaarka, isaga oo hubinaya <0.5% dareenka dareenka ka sarreeya -40°C ilaa 125°C. Codsiyada waxaa ka mid ah ogaanshaha shilalka baabuurta iyo AR/VR dabagalka dhaqdhaqaaqa.

• Dareemayaasha cadaadiska: khafiifinta ilaa 40 μm waxay awood u siinaysaa 0-300 cabbir cabbirka <0.1% FS hysteresis. Isticmaalka isku-xidhka ku-meel-gaadhka ah (sidayaal galaas), geeddi-socodku wuxuu ka fogaanayaa jabka wafer inta lagu jiro etching dhinaca dambe, gaaritaanka <1 μm dulqaadka cadaadiska xad-dhaafka ah ee dareemayaasha IoT ee warshadaha.

Isku-dhafka Farsamada: Qalabkeena khafiifinta waferka wuxuu mideeyaa shiididda makaanikada, CMP, iyo etching balaasmaha si wax looga qabto caqabadaha kala duwan ee agabka (Si, SiC, Sapphire). Tusaale ahaan, GaN-on-SiC waxay u baahan tahay shiidid isku-dhafan (taageerayaal dheeman + balasma) si loo miisaamo adkaanta iyo ballaadhinta kulaylka, halka dareemayaasha MEMS ay dalbadaan qallafsanaanta dusha sare ee 5 nm iyada oo loo marayo polishing CMP.

• Saamaynta Wershadaha: Iyada oo awood u siinaysa waferrada dhuuban, waxqabadka sare leh, tignoolajiyadani waxay kaxaynaysaa hal-abuurka AI chips, 5G mmWave modules, iyo elektaroonigga dabacsan, oo leh dulqaadka TTV <0.1 μm ee bandhigyada laalaabi karo iyo <0.5 μm ee dareemayaasha LiDAR baabuurta.

Adeegyada XKH

1. Xalka la habeeyey
Qaabaynta La Milicsan Karo: Nashqadaha qolka 4-12-inch oo leh soo dejin toos ah.
Taageerada Doping: Cuntooyinka gaarka ah ee kiristaalo Er/Yb-doped iyo wafers InP/GaAs.

2. Dhamaadka-ilaa-Dhamaadka Taageerada
Horumarinta Habraaca: Tijaabada bilaashka ah waxay ku socotaa hagaajin.
Tababarka Caalamiga ah: Aqoon-is-weydaarsiyo farsamo sannad kasta oo ku saabsan dayactirka iyo cilad-saarka.

3. Nidaaminta Qalabka Kala Duwan
SiC: Wafer khafiifinta ilaa 100 μm oo leh Ra <0.1 nm.
Sapphire: dhumucdiisuna tahay 50μm daaqadaha laser UV (gudbinta> 92% @ 200 nm).

4. Adeegyada Qiimaha lagu daray
Alaabada la isticmaali karo: Taayirrada dheemanka (2000+ wafers/nolosha) iyo slurries CMP.

Gabagabo

Qalabkan khafiifinta wafer-ku waxa uu keenaa saxsanaanta hogaaminaysa wershadaha, kala duwanaanta agabka, iyo automation smart, taas oo ka dhigaysa lama huraan u ah is dhexgalka 3D iyo korontada. Adeegyada dhamaystiran ee XKH-laga bilaabo habaynta ilaa habaynta ka dib-hubi in macaamiishu ay gaadhaan hufnaanta kharashka iyo wax qabad heer sare ah wax soo saarka semiconductor.