Substrate
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3 inji Dia76.2mm sapphire wafer 0.5mm dhumucdiisuna tahay C-plane SSP
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8 inji oo ah wafer silikoon ah oo P/N ah (100) 1-100Ω substrate-ka dib-u-soo-celinta been abuurka ah
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Wafer 4 inji ah oo SiC Epi ah oo loogu talagalay MOS ama SBD
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12 inji Sapphire Wafer C-Plane SSP/DSP
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2 inji 50.8mm Wafer silikoon ah FZ N-Nooca SSP
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2 inji ah oo ah ingot SiC Dia50.8mmx10mmt 4H-N monocrystal
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200kg C-plane Saphire boule 99.999% 99.999% habka monocrystalline KY
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4 inji ah oo ah nooca loo yaqaan 'Silicon wafer FZ CZ N-Nooca' DSP ama SSP
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Wafers SiC ah oo 4 inji ah 6H Semi-insulating SiC Substrates, cilmi baaris, iyo heer been abuur ah
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Wafer 6 inji ah oo HPSI SiC ah oo leh Silicon Carbide oo ah wafer SiC ah oo nus-cay ah
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4 inji ah oo ah wafer SiC nus-cay ah oo HPSI SiC substrate ah oo heer wax soo saar Prime ah
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Wafer 3 inji ah 76.2mm 4H-Semi SiC ah oo leh substrate Silicon Carbide Wafers SiC ah oo nus-cay ah