4 inch SiC Wafers 6H Semi-insulating SiC Substrates aasaasiga ah, cilmi-baarista, iyo fasalka dhumucda leh

4 inch SiC Wafers 6H Semi-insulating SiC Substrates aasaasiga ah, cilmi-baarista, iyo darajada cidhiidhiga ah ee muuqaalka leh

Sharaxaad Gaaban:

Substrate-ka silikoon carbide semi-dahaaran waxaa la sameeyay by jarida, shiidi, polishing, nadiifinta iyo farsamada kale ee processing ka dib markii koritaanka of crystal carbide silicon semi-dahaaran.Lakabka ama lakabka crystal multilayer ayaa lagu koray substrate kaas oo buuxiya shuruudaha tayada sida epitaxy, ka dibna qalabka microwave RF waxaa la sameeyaa iyadoo la isku darayo naqshadaynta wareegga iyo baakadaha.Waxaa loo heli karaa sida 2inch 3inch 4incgh 6inch 8 inch in industry, research and test class semi-insulated silicon carbide substrates single crystal.

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Darajo			Wax-soo-saarka MPD eber (Grade Z)			Heerka Wax-soo-saarka Heerka (P Degree)		Fasalka Dhamaystiran (D Derajada)
Dhexroorka			99.5 mm ~ 100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Hanuuninta Wafer			Xagasha ka baxsan: 4.0° dhanka <1120> ±0.5° ee 4H-N
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Hanuuninta Flat Primary		{10-10} ±5.0°
Dhererka Guriga aasaasiga ah		32.5 mm± 2.0 mm
Dhererka Guriga Sare		18.0 mm± 2.0 mm
Hanuuninta Guriga Sare		Silicon weji kor ah: 90° CW.laga bilaabo guri dabaq ah ± 5.0°
Ka saarida gees		3 mm
LTV/TTV/Bow/Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			C waji				Polish		Ra≤1 nm
			Si waji	CMP	Ra≤0.2 nm					Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare		Midna						Dhererka isugeynta ≤ 10 mm, hal dhererka≤2 mm
Taarikada Hex By Iftiin Xoogan Sare		Aagga wadarta ≤0.05%						Aagga isugeynta ≤0.1%
Meelo Badan Oo Iftiin Xoogan Sare leh		Midna						Aagga isugeynta≤3%
Kaarboon Muuqaal ah		Aagga wadarta ≤0.05%						Aagga isugeynta ≤3%
Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare		Midna						Dhererka isugeynta≤1＊dhexroorka wafer
Chips-ka Cidhifka Sare ee Iftiinka Xooga		Midna lama oggola ≥0.2mm ballac iyo qoto dheer						5 waa la ogol yahay, ≤1 mm midkiiba
Wasakhaynta Silikoonka Dusha Sare ee Xooggiisa		Midna
Baakadaha		Cassette Multi-wafer ah ama Konteenarka Waferka Keliya