SiC
-
6inch SiC Wafer Epitaxiy Nooca N/P waa la aqbalayaa oo la habeeyey
-
Dia150mm 4H-N 6inch substrate SiC Soo saarista iyo heerka been abuurka ah
-
Wafer 4 inji ah oo SiC Epi ah oo loogu talagalay MOS ama SBD
-
2 inji ah oo ah ingot SiC Dia50.8mmx10mmt 4H-N monocrystal
-
200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer
-
4H-N Dia205mm SiC iniin laga keenay Shiinaha P iyo D heerka Monocrystaline
-
Wafers SiC ah oo 4 inji ah 6H Semi-insulating SiC Substrates, cilmi baaris, iyo heer been abuur ah
-
Wafer 6 inji ah oo HPSI SiC ah oo leh Silicon Carbide oo ah wafer SiC ah oo nus-cay ah
-
4 inji ah oo ah wafer SiC nus-cay ah oo HPSI SiC substrate ah oo heer wax soo saar Prime ah
-
Wafer 3 inji ah 76.2mm 4H-Semi SiC ah oo leh substrate Silicon Carbide Wafers SiC ah oo nus-cay ah
-
3 inji Dia76.2mm SiC substrates HPSI Prime Research iyo Dummy grade
-
4H-semi HPSI 2inji SiC substrate wafer ah Soosaarista Heerka cilmi-baarista ee been abuurka ah