SiC
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ee MOS ama SBD
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SiC Epitaxial Wafer ee Qalabka Korontada - 4H-SiC, Nooca N, Cufnaanta Cilad Hoose
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4H-N Nooca SiC Epitaxial Wafer Heerka Sare ee Soo noqnoqoshada Sare
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3 inch Nadiif Sareedo (Lama La'aan) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy darajo cilmi baaris 500um dhumucdiisuna tahay
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4H-N/6H-N SiC Wafer Reasearch 4H-N/6H-N Wax-soo-saarka Dib-u-Celinta Wax-soo-saarka Dummy fasalka 150mm Silicon carbide substrate
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Wafer dahaarka leh, wafer safayr, wafer silikon, wafer SiC, 2inch 4inch 6inch, dhumuc dahaar dahab ah 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
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2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High conductivity kulaylka isticmaalka hoose
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa
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6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy