SiC
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Substrate-ka Hal-Kiristaal ah ee Silicon Carbide (SiC) – 10×10mm Wafer
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Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD
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Wafer Epitaxial SiC ah oo loogu talagalay Qalabka Korontada - 4H-SiC, N-nooca, Cufnaanta Cilladaha Yar
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4H-N Nooca SiC Epitaxial Wafer Danab Sare Soo noqnoqoshada Sare
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3 inji Nadiifnimo Sare (Lama isticmaalin) Wafers Silicon Carbide Substrates nus-insulating Sic Substrates (HPSl)
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4H-N 8 inji oo ah wafer substrate ah oo SiC ah oo Silicon Carbide ah oo dhumucdiisu tahay 500um
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4H-N/6H-N SiC Wafer Reasearch wax soo saarka heerka dummy Dia150mm Silicon carbide substrate
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Wafer dahaadh ah oo Au ah, sapphire wafer, silicon wafer, SiC wafer, 2inji 4inji 6inji, Dhumuc dahab ah oo dahaadh ah 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
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2 inji ah oo ah nooca Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm oo laba-geesood ah oo la nadiifiyo. Kontoroolka kulaylka oo sarreeya Isticmaalka korontada oo hooseeya
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Substrate-ka SiC 3 inji 350um dhumucdiisuna tahay nooca HPSI Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N nooca dhumucda Dummy/prime waa la habeyn karaa