SiC
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2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High conductivity kulaylka isticmaalka hoose
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa
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6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy
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Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucdiisuna 5-10mm Cilmi-baadhis
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Sic Substrate Silicon Carbide Wafer 4H-N Nooca Adayga Sare ee Iska caabinta Daxalka Darajada Koowaad
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2inch Silicon Carbide Wafer 6H-N Nooca Darajada koowaad ee Cilmi-baarista Darajada Dummy Fasalka 330μm 430μm Dhumucdiisuna
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2inch Silicon carbide substrate 6H-N dhexroor laba-geesood leh oo dhalaalaya 50.8mm darajo cilmi baaris
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N-Nooca SiC Isku-dhafka Substrates Dia6inch monocrystaline tayo sare leh iyo substrate tayo hoose leh
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Substrate-ka SiC Isku-dhafka ah ee Semi-Insulating Dia2inch 4inch 6inch 8inch HPSI
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N-Nooca SiC on Si Composite Substrates Dia6inch
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Substrate SiC Dia200mm 4H-N iyo HPSI Silicon carbide