4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy darajo cilmi baaris 500um dhumucdiisuna tahay

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Cilmi baarista darajada 500um dhumucda Sawirka

Sharaxaad Gaaban:

Waferrada silikoon carbide waxaa lagu isticmaalaa aaladaha elektiroonigga ah sida korontadu, MOSFETs, aaladaha mikrowave ee awoodda sare leh, iyo RF transistor-ka, taas oo awood u siineysa beddelka tamarta hufan iyo maamulka awoodda.Wafers-yada SiC iyo substrates waxay sidoo kale ka helaan isticmaalka elektiroonigga baabuurta, nidaamyada hawada, iyo tignoolajiyada tamarta la cusboonaysiin karo.

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Sideed u Doorataa Wafers Silicon Carbide & Substrates SiC?

Markaad dooranayso waferrada silikoon carbide (SiC) iyo substrates, waxaa jira dhowr arrimood oo la tixgeliyo.Waa kuwan qaar ka mid ah shuruudaha muhiimka ah:

Nooca Walxaha: Go'aami nooca SiC ee ku habboon codsigaaga, sida 4H-SiC ama 6H-SiC.Qaab dhismeedka ugu badan ee la isticmaalo waa 4H-SiC.

Nooca Doping: Go'aanso haddii aad u baahan tahay substrate SiC ah oo la sameeyay ama aan la taaban.Noocyada doping-ga caadiga ah waa N-nooca (n-doped) ama P-nooca (p-doped), taas oo ku xidhan shuruudahaaga gaarka ah.

Tayada Crystal: Qiimee tayada muraayada ee SiC wafers ama substrates.Tayada la rabo waxaa lagu go'aamiyaa cabirrada sida tirada cilladaha, jihaynta crystallographic, iyo qallafsanaanta dusha sare.

Dhexroorka Wafer: Dooro cabbirka wafer ee ku habboon codsigaaga.Cabbirrada caadiga ah waxaa ka mid ah 2 inji, 3 inji, 4 inji, iyo 6 inji.Inta uu bato dhexroorku, waxa badan oo aad ka heli kartaa waferkiiba.

Dhumucda: Tixgeli dhumucda la rabo ee maraqa SiC ama substrates.Xulashada dhumucda caadiga ah waxay u dhaxaysaa dhowr mikromitir ilaa dhowr boqol oo mikromitir.

Jihaynta: Go'aami hanuuninta crystallographic ee ku habboon shuruudaha codsigaaga.Hanuuninta guud waxaa ka mid ah (0001) ee 4H-SiC iyo (0001) ama (0001̅) ee 6H-SiC.

Dhammaystirka dusha sare: Qiimee dhammaadka dusha sare ee waferrada SiC ama substrates.Dusha sare waa in ay ahaataa mid siman, oo dhalaalaya, oo ka nadiif ah xagashada ama wasakhowga.

Sumcada Alaab-qeybiyaha: Dooro alaab-qeybiye sumcad leh oo khibrad dheer u leh soo saarista maraqa iyo substrate-ka tayada sare leh ee SiCTixgeli arrimo ay ka mid yihiin awoodaha wax-soo-saarka, xakamaynta tayada, iyo dib u eegista macaamiisha.

Qiimaha: Tixgeli saamaynta qiimaha, oo ay ku jiraan qiimaha waferka ama substrate-ka iyo kharashyada habaynta dheeraadka ah.

Waa muhiim inaad si taxadar leh u qiimeyso arrimahan oo aad la tashato khabiirada warshadaha ama alaab-qeybiyeyaasha si loo hubiyo in waferrada SiC ee la doortay iyo substrate-yada ay buuxiyaan shuruudahaaga gaarka ah.