SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI(nadiifinta sare ee Semi-Insulating) 4H/6H-P 3C -n nooca 2 3 4 6 8inch la heli karo

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI(Nadiifinta Sare Semi-Insulating) 4H/6H-P 3C -n nooca 2 3 4 6 8inch la heli karo

Sharaxaad Gaaban:

Waxaan bixinaa xulashooyin kala duwan oo tayo sare leh oo SiC ah (Silicon Carbide), oo si gaar ah diiradda loogu saarayo N-nooca 4H-N iyo 6H-N wafers, kuwaas oo ku habboon codsiyada optoelectronics horumarsan, aaladaha korantada, iyo jawi heerkul sare ah . Waferrada nooca N-ga ah waxaa lagu yaqaanaa kulaylkooda aan caadiga ahayn, xasilloonida korantada oo aad u wanaagsan, iyo adkeysi cajiib ah, taasoo ka dhigaysa inay ku fiican yihiin codsiyada waxqabadka sare leh sida korantada korantada, nidaamyada wadista baabuurta korantada, rogayaasha tamarta dib loo cusboonaysiin karo, iyo sahayda tamarta warshadaha. Marka lagu daro wax-bixintayada nooca N-ga ah, waxaanu sidoo kale bixinaa nooca P-nooca 4H/6H-P iyo 3C SiC wafer ee baahiyaha gaarka ah, oo ay ku jiraan soo noqnoqda sare iyo aaladaha RF, iyo sidoo kale codsiyada sawir-qaadista. Wafersyadayada waxaa lagu heli karaa cabbirro u dhexeeya 2 inji ilaa 8 inji, waxaanan bixinnaa xalal ku habboon si loo buuxiyo shuruudaha gaarka ah ee qaybaha warshadaha kala duwan. Faahfaahin dheeraad ah ama weydiimo, fadlan xor u noqo inaad nala soo xidhiidho.

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Guryaha

4H-N iyo 6H-N (N-nooca SiC Wafers)

Codsiga:Inta ugu badan waxaa loo isticmaalaa korantada elektiroonigga ah, optoelectronics, iyo codsiyada kulaylka sareeyo.

Dhexroorka dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:350 μm ± 25 μm, oo leh dhumucyo ikhtiyaari ah oo ah 500 μm ± 25 μm.

iska caabinN-nooca 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω · cm (P-grade); N-nooca 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Qalafsanaan:Ra ≤ 0.2 nm (CMP ama MP).

Cufnaanta Dheef-yar-yar (MPD):<1 ea/cm².

TTV: ≤ 10 μm dhammaan dhexrooryada.

Warp: ≤ 30 μm (≤ 45 μm oo ah maraqa 8-inch).

Ka saarida cidhifka:3 mm ilaa 6 mm waxay kuxirantahay nooca waferka.

BaakadCajalad badan oo wafer ah ama weel kaliya oo canjeero ah.

Ohter cabbirka la heli karo 3inch 4inch 6inch 8inch

HPSI (SiC Wafers Nadiifin Sare oo Semi-Insulating ah)

Codsiga:Loo isticmaalo aaladaha u baahan iska caabin sare iyo waxqabad deggan, sida aaladaha RF, codsiyada sawir-qaadista, iyo dareemayaasha.

Dhexroorka dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:Dhumucda caadiga ah ee 350 μm ± 25 μm oo leh xulashooyinka waferrada dhumuc weyn ilaa 500 μm.

Qalafsanaan:Ra ≤ 0.2 nm.

Cufnaanta Dheef-yar-yar (MPD): ≤ 1 ea/cm².

iska caabinIska caabin sare, oo sida caadiga ah loo isticmaalo codsiyada dahaadhka nuska ah.

Warp: ≤ 30 μm (xajmiyada ka yar), ≤ 45 μm dhexroorka waaweyn.

TTV: ≤ 10 μm

Ohter cabbirka la heli karo 3inch 4inch 6inch 8inch

4H-P,6H-P&3C SiC wafer(P-nooca SiC Wafers)

Codsiga:Asal ahaan loogu talagalay awoodda iyo aaladaha soo noqnoqda sare.

Dhexroorka dhexroorka:50.8 mm ilaa 200 mm.

Dhumucda:350 μm ± 25 μm ama xulashooyinka la habeeyey.

iska caabinNooca P-4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Qalafsanaan:Ra ≤ 0.2 nm (CMP ama MP).

Cufnaanta Dheef-yar-yar (MPD):<1 ea/cm².

TTV: ≤ 10 μm

Ka saarida cidhifka:3 mm ilaa 6 mm.

Warp: ≤ 30 μm cabbirro ka yar, ≤ 45 μm cabbirro waaweyn.

Xajmiga la heli karo 3inch 4inch 6inch5×5 10×10

Shaxda cabbirrada xogta ee qayb

Hanti	2 inji		3 inji		4inch	6 inji	8 inji
Nooca	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Dhexroorka	50.8 ± 0.3 mm		76.2 ± 0.3mm		100± 0.3mm	150± 0.3mm	200 ± 0.3 mm
Dhumucda	330 ± 25 um		350 ± 25 um		350 ± 25 um	350 ± 25 um	350 ± 25 um
	350 ± 25um;		500± 25um		500± 25um	500± 25um	500± 25um
	ama la habeeyo		ama la habeeyo		ama la habeeyo	ama la habeeyo	ama la habeeyo
Qalafsanaan	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
Warp	≤ 30um		≤ 30um		≤ 30um	≤ 30um	≤45um
TTV	≤ 10um		≤ 10um		≤ 10um	≤ 10um	≤ 10um
Xoq / Qod	CMP/MP
MPD	<1ea/cm-2	<1ea/cm-2		<1ea/cm-2		<1ea/cm-2		<1ea/cm-2
Qaabka	Wareeg, Flat 16mm; Dhererka OF 22mm; Dhererka 30/32.5mm; Dhererka 47.5mm; FIIRO GAAR AH; FIIRO GAAR AH;
Bevel	45°, SEMI Spec; Qaabka C
Darajo	Darajada wax soo saarka ee MOS&SBD; Darajada cilmi baarista ; Fasalka cakiran, Fasalka waferka abuur
Hadallo	Dhexroorka, dhumucda, hanuuninta, qeexida kor ku xusan waxa lagu beddeli karaa codsigaaga

Codsiyada

·Korantada Korontada

Waferrada nooca N nooca SiC ayaa muhiim u ah aaladaha korantada elektiroonigga ah iyadoo ay ugu wacan tahay awoodda ay u leeyihiin inay wax ka qabtaan danab sare iyo hadda sare. Waxaa caadi ahaan loo adeegsadaa korantada, rogayaasha, iyo wadeyaasha mootada ee warshadaha sida tamarta la cusboonaysiin karo, baabuurta korantada, iyo automation warshadaha.

· Optoelectronics
Qalabka N nooca SiC, gaar ahaan codsiyada optoelectronic, ayaa lagu shaqeeyaa aaladaha ay ka midka yihiin dareeraha iftiinka-bixiya (LEDs) iyo diodes laser. Dhaqdhaqaaqooda kuleylkooda sare iyo gabbaadka ballaaran ayaa ka dhigaya kuwo ku habboon qalabka wax-qabadka sare leh ee optoelectronic.

·Codsiyada Heerkulka Sare
4H-N 6H-N Waferrada SiC waxay si fiican ugu habboon yihiin jawiga heerkulka sare, sida dareemayaasha iyo qalabka korontada ee loo isticmaalo hawada, baabuurta, iyo codsiyada warshadaha halkaasoo kuleylka kuleylka iyo xasilloonida heerkulka sare ay muhiim u yihiin.

·Qalabka RF
4H-N 6H-N SiC wafers waxaa lagu isticmaalaa inta jeer ee raadiyaha (RF) qalabka kuwaas oo ku shaqeeya xaddi-soo noqnoqda sare. Waxaa lagu dabaqaa nidaamyada isgaarsiinta, tignoolajiyada radar, iyo isgaarsiinta dayax-gacmeedka, halkaasoo waxtarka sare ee tamarta iyo waxqabadka looga baahan yahay.

·Codsiyada Photonic
Sawir-qaadista, waferrada SiC waxaa loo isticmaalaa aaladaha sida sawir-qaadayaasha iyo modulators. Alaabta gaarka ah ee maaddadu waxay u ogolaataa inay wax ku ool u yeelato soo saarista iftiinka, habaynta, iyo ogaanshaha hababka isgaarsiinta indhaha iyo aaladaha sawirka.

·Dareemayaasha
Waferrada SiC waxaa loo adeegsadaa codsiyo dareeme oo kala duwan, gaar ahaan meelaha qallafsan ee laga yaabo in walxaha kale ay ku guuldareystaan. Kuwaas waxaa ka mid ah heerkulka, cadaadiska, iyo dareemayaasha kiimikada, kuwaas oo lagama maarmaan u ah goobaha sida baabuurta, saliidda & gaaska, iyo la socodka deegaanka.

·Nidaamyada Wadayaasha Gaadiidka Korontada
Tiknoolajiyada SiC waxay door muhiim ah ka ciyaartaa baabuurta korantada iyadoo hagaajinaysa hufnaanta iyo waxqabadka hababka wadista. Iyada oo leh koronto-dhaliyeyaasha awoodda SiC, baabuurta korantada waxay gaari karaan nolosha batteriga ka wanaagsan, waqtiyada dallacaadda degdegga ah, iyo waxtarka tamarta weyn.

·Dareemayaasha Sare iyo Beddeleyaasha Photonic
Tignoolajiyada dareemayaasha horumarsan, waferrada SiC waxaa loo isticmaalaa abuurista dareemayaal sax ah oo sax ah oo loogu talagalay codsiyada robotics, aaladaha caafimaadka, iyo la socodka deegaanka. Beddeleyaasha sawir-qaadista, guryaha SiC ayaa looga faa'iideystaa in si hufan loogu beddelo tamarta korantada calaamadaha indhaha, taas oo muhiim u ah isgaarsiinta iyo kaabayaasha internetka ee xawaaraha sare leh.

Q&A

QWaa maxay 4H gudaha 4H SiC?
A："4H" gudaha 4H SiC waxa loola jeedaa qaab dhismeedka crystal ee silikoon carbide, gaar ahaan qaab saddex geesood ah oo leh afar lakab (H). "H" waxay tilmaamaysaa nooca laba geesoodka ah, oo ka sooca noocyada kale ee SiC sida 6H ama 3C.

QWaa maxay kulaylka kuleyliyaha 4H-SiC?
A: Heerkulka kulaylka ee 4H-SiC (Silicon Carbide) waa qiyaastii 490-500 W/m·K heerkulka qolka. Dhaqdhaqaaqa kulaylka sare wuxuu ka dhigayaa mid ku habboon codsiyada korantada elektiroonigga ah iyo jawiga kulaylka sareeyo, halkaas oo daadinta kulaylka hufan ay muhiim u tahay.

Kii hore: Tuubada Sapphire ee wax soo saarka hufan ee Al2O3 crystal xidho adkaysi u adkaysta EFG / KY dhexroor kala duwan oo caado polishing

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