Foornada Koritaanka SiC Ingot ee Hababka SiC Crystal TSSG/LPE Dhexroor

Foornada Kobaca SiC Ingot ee Qaababka SiC Crystal TSSG/LPE Dhexroor-weyn

Sharaxaad Gaaban:

Foornada koritaanka wejiga dareeraha ee Silicon carbide ingot ee XKH waxay shaqaaleysiisaa TSSG (Kobaca Xalka Sare ee Seed) iyo LPE (Wajiga dareeraha ah) teknoolajiyada, si gaar ah loogu talagalay tayada sare ee SiC kobaca hal crystal. Habka TSSG wuxuu awood u siinayaa korriinka 4-8 inch dhexroor-ballaaran 4H/6H-SiC iyada oo loo marayo heerkul sax ah iyo xakamaynta xawaaraha abuurka, halka habka LPE uu fududeeyo korriinka la xakameeyey ee lakabyada epitaxial SiC ee heerkulka hoose, gaar ahaan ku habboon lakabyada epitaxial-ka ee aadka u hooseeya. Nidaamkan kobaca ee silikoon carbide ee dareeraha ah ayaa si guul leh loogu dabaqay wax soo saarka warshadaha ee kiristaalo SiC kala duwan oo ay ku jiraan 4H / 6H-N nooca iyo 4H / 6H-SEMI nooca insulating, oo siinaya xal dhamaystiran qalabka ilaa hababka.

Email noogu soo dir

Astaamaha

Mabda'a Shaqada

Mabda'a asaasiga ah ee kobaca silikoon carbide ee wejiga dareeraha ah waxay ku lug leedahay milanka sare ee nadiifka ah ee SiC alaabta ceeriin ee biraha dhalaalaysa (tusaale, Si, Cr) at 1800-2100 ° C si loo sameeyo xalal buuxa, oo ay ku xigto korriinka jihada ee SiC hal kiristaalo on kiristaalo abuurka iyada oo loo marayo heerkul sax ah iyo nidaaminta supersaturation. Tignoolajiyadani waxay si gaar ah ugu habboon tahay inay soo saarto nadiif-sare (> 99.9995%) 4H/6H-SiC hal kiristaalo oo leh cufnaanta cilladaysan (<100/cm²), buuxinta shuruudaha substrate-ka adag ee korantada elektiroonigga ah iyo aaladaha RF. Nidaamka korriinka dareeraha-wejiga wuxuu awood u siinayaa xakamaynta saxda ah ee nooca conductivity crystal (nooca N/P) iyo iska caabinta iyada oo loo marayo halabuurka xalka la hagaajiyay iyo cabbirrada koritaanka.

Qaybaha xudunta u ah

1. Nidaamka Crucible ee Gaarka ah: Garaafyada-nadiifinta sare leh / tantalum isku-dhafka ah, caabbinta heerkulka> 2200 ° C, adkaysi u leh SiC dhalaalidda daxalka.

2. Nidaamka Kuleylinta Aaga-badan: Isku-darka caabbinta / kuleylka soo-saarka oo leh saxnaanta xakamaynta heerkulka ± 0.5 ° C (1800-2100 ° C kala duwan).

3. Habka Dhaqdhaqaaqa Saxda ah: Xakamaynta laba-loop-xiran ee wareegga abuurka (0-50rpm) iyo qaadista (0.1-10mm/h).

4. Nidaamka Xakamaynta jawiga: ilaalinta sare ee argon / nitrogen, cadaadiska shaqada ee la hagaajin karo (0.1-1atm).

5. Nidaamka Xakamaynta caqliga: PLC + kombuyuutar warshadeed oo aan badneyn oo kombuyuutar ah oo leh kormeerid kobaca waqtiga-dhabta ah.

6. Nidaamka Qaboojinta Waxtarka leh: Naqshadaynta qaboojinta biyaha ee darajada leh waxay hubisaa hawlgalka xasilloon ee muddada dheer.

Isbarbardhigga TSSG vs. LPE

Astaamaha	Habka TSSG	Habka LPE
Heer kulka kobaca	2000-2100°C	1500-1800°C
Heerka Kobaca	0.2-1mm/h	5-50μm/h
Cabbirka Crystal	4-8 inch oo qoto dheer	50-500μm epi-lakabyada
Codsiga ugu muhiimsan	Diyaarinta substrate	Qalabka korontada ee epi-lakabyada
Cufnaanta cilladaysan	<500/cm²	<100/cm²
Noocyo ku habboon	4H/6H-SiC	4H/3C-SiC

Codsiyada Muhiimka ah

1. Korantada Korontada: 6-inch 4H-SiC substrates ee 1200V+ MOSFETs/diodes.

2. 5G RF Aaladaha: Substrate-ka-dahaaran ee SiC ee saldhigyada PAs.

3. Codsiyada EV: Ultra- dhumucdiisuna waxay tahay (> 200μm) lakabyada epi-lakabyada ee cutubyada darajada baabuurta.

4. Beddelayaasha PV: Substrates cillad hoose oo awood u siinaya> 99% hufnaanta beddelka.

Faa'iidooyinka Muhiimka ah

1. Sareynta Tignoolajiyada
1.1 Naqshadaynta Hababka Badan ee Isku-dhafan
Nidaamkan kobaca ingot ee SiC-da dareeraha ah wuxuu si hal-abuur leh isugu daraa TSSG iyo teknoolojiyadda korriinka LPE. Nidaamka TSSG wuxuu shaqaaleeyaa kobaca xalka sare-abuurka leh isugeynta dhalaalka saxda ah iyo xakamaynta heerkulka heerkulka (ΔT≤5 ℃ / cm), awood u siinaysa koritaanka xasilloon ee 4-8 inch dhexroor weyn oo SiC ah oo leh wax-soo-saar hal-gudbi ah oo ah 15-20kg ee 6H/4H-SiC crystals. Nidaamka LPE waxa uu isticmaalaa ka kooban dareere la hagaajiyay (Nidaamka Si-Cr alloy) iyo kantaroolka sare u kaca (± 1%) si ay u koraan lakabyo epitaxial qaro leh oo tayo sare leh oo leh cufnaanta cilladaysan <100/cm² heerkul hooseeya (1500-1800 ℃).

1.2 Nidaamka Xakamaynta caqliga
Lagu qalabeeyay jiilka 4-aad xakamaynta kobaca caqliga leh oo ka kooban:
• Kormeerka gudaha ee-muuqaalka badan (400-2500nm cabbirka hirarka)
• Ogaanshaha heerka dhalaalka laser-ku-salaysan (±0.01mm sax)
• Xakamaynta wareegga xiran ee dhexroorka ku salaysan CCD (<± 1mm isbeddelka)
• Koritaanka halbeegga kobaca ee ku shaqeeya AI (15% badbaadinta tamarta)

2. Faa'iidooyinka Waxqabadka Geedi socodka
2.1 Habka TSSG Awoodaha Muhiimka ah
• Awoodda cabbirka weyn: Waxay taageertaa ilaa 8-inch korriin crystal leh> 99.5% isku mid ah dhexroorka
• crystallinity sare: cufnaanta kala goynta <500/cm², cufnaanta micropipe <5/cm²
• Labbiska doping: <8% n-nooca iska caabbinta kala duwanaanshaha
• Heerka kobaca ee la wanaajiyey: La hagaajin karo 0.3-1.2mm/saacaddii, 3-5× ka dhaqso badan hababka uumiga

2.2 Habka LPE Awoodaha Muhiimka ah
• Cilad aadka u hooseeya: cufnaanta gobolka Interface <1×10¹¹cm⁻²·eV⁻¹
Xakamaynta dhumucda saxda ah: 50-500μm epi-lakabyada leh <± 2% kala duwanaansho dhumucdiisuna
• Hufnaanta heerkulka-hoose: 300-500 ℃ ka hooseeya hababka CVD
• Kobaca qaabdhismeedka isku dhafan: Waxay taageertaa isgoysyada pn, superlatices, iwm.

3. Faa'iidooyinka Wax-soo-saarka Wax-soo-saarka
3.1 Xakamaynta Qiimaha
85% isticmaalka alaabta ceeriin (marka loo eego 60% ee caadiga ah)
• 40% isticmaalka tamarta hoose (marka la barbardhigo HVPE)
• 90% wakhtiga qalabka

3.2 Hubinta Tayada
6σ xakamaynta habka (CPK>1.67)
Ogaanshaha cilladda onlaynka ah (xalka 0.1μm)
• Raadinta xogta hab-socod-buuxa ah (2000+ cabbir-waqtiga-dhabta ah)

3.3 Miisaanka
• La jaanqaadi kara noocyada 4H/6H/3C
• La cusboonaysiin karo ilaa 12-inch modules habka
• Waxay taageertaa isku-dhafka SiC/GaN

4. Faa'iidooyinka Codsiga Warshadaha
4.1 Qalabka Korontada
• Substrate-ka adkaysiga hooseeya (0.015-0.025Ω·cm) ee aaladaha 1200-3300V
• Substrates-ka-dahaaran (>10⁸Ω·cm) ee codsiyada RF

4.2 Farsamooyinka Soo Koraya
• Isgaadhsiinta tirada: Substrates sanqadh aadka u hooseeya (1/f buuq<-120dB)
• Deegaan aad u daran: crystals u adkaysta shucaaca (<5% nabaad-guurka kadib 1×10¹⁶n/cm² shucaaca)

Adeegyada XKH

1. Qalabka la Habeeyay: Habaynta nidaamka TSSG/LPE ee ku habboon.
2. Tababarka Habka: Barnaamijyada tababarka farsamada oo dhamaystiran.
3. Taageerada iibka ka dib: 24/7 jawaabta farsamada iyo dayactirka.
4. Furaha Furaha: Adeeg buuxa laga bilaabo rakibaadda ilaa habka ansixinta.
5. Alaabta: 2-12 inch substrates SiC/wafers-epi waa la heli karaa.

Faa'iidooyinka muhiimka ah waxaa ka mid ah:
• Ilaa 8-inch awoodda koritaanka crystal.
Labbiska iska caabinta <0.5%.
• Waqtiga qalabka>95%.
• 24/7 taageero farsamo.