SiC
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Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa
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Nooca SiC Ingot 4H-N nooca Dummy fasalka 2inch 3inch 4inch 6inch dhumucdiisuna: ＞10mm
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HPSI SiC wafer dia: dhumucdiisuna tahay 3inch:350um± 25 µm ee Korantada Korontada
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3inch Nadiifin Sare Semi-Insulating (HPSI) SiC wafer 350um Dummy fasalka koowaad
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Sic Substrate Silicon Carbide Wafer 4H-N Nooca Adayga Sare ee Iska caabinta Daxalka Darajada Koowaad
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba jeer oo La Sifeeyay Fasalka Hore ee Sare
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2inch Silicon Carbide Wafer 6H-N Nooca Darajada koowaad ee Cilmi-baarista Darajada Dummy Fasalka 330μm 430μm Dhumucdiisuna
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2inch Silicon carbide substrate 6H-N dhexroor laba-geesood leh oo dhalaalaya 50.8mm darajo cilmi baaris
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N-Nooca SiC Isku-dhafka Substrates Dia6inch monocrystaline tayo sare leh iyo substrate tayo hoose leh
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Substrate-ka SiC Isku-dhafka ah ee Semi-Insulating Dia2inch 4inch 6inch 8inch HPSI
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Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub
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N-Nooca SiC on Si Composite Substrates Dia6inch