SiC
-
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy darajo cilmi baaris 500um dhumucdiisuna tahay
-
4H-N/6H-N SiC Wafer Reasearch 4H-N/6H-N Wax-soo-saarka Dib-u-Celinta Wax-soo-saarka Dummy fasalka 150mm Silicon carbide substrate
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucdiisuna tahay
-
HPSI SiC wafer dia: dhumucdiisuna tahay 3inch:350um± 25 µm ee Korantada Korontada
-
8 inch SiC silicon carbide wafer 4H-N nooca 0.5mm wax soo saarka darajada cilmi baarista substrate caadadii
-
3inch Nadiifin Sare Semi-Insulating (HPSI) SiC wafer 350um Dummy fasalka koowaad
-
Nooca P-nooca SiC substrate SiC wafer Dia2inch cusub
-
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Laba jeer oo La Sifeeyay Fasalka Koowaad ee Sare
-
SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI(nadiifinta sare ee Semi-Insulating) 4H/6H-P 3C -n nooca 2 3 4 6 8inch la heli karo
-
2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High conductivity kulaylka isticmaalka hoose
-
Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade
-
Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa