Alaabta
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p-nooca 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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Substrate-ka SiC P-nooca 4H/6H-P 3C-N 4inch leh dhumucdiisuna tahay 350um heerka wax soo saarka
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4H/6H-P 6inch SiC wafer eber eber MPD wax soo saarka Fasalka dummy
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P-nooca SiC wafer 4H/6H-P 3C-N 6inch dhumucdiisuna tahay 350 μm oo leh Hanuuninta Flat Aasaasiga ah
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Alumina cududda dhoobada caado ah ee gacanta dhoobada dhoobada ah
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Habka Sapphire tube KY dhammaan hufan oo la beddeli karo
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Al2O3 99.999% sapphire caado caadadii daab hufan xirashada u adkaysta 38 × 4.5 × 0.3mmt
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Ku-tallaalidda timaha daabka Sapphire waxaa loo habeyn karaa arrimo caafimaad
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Lilac YAG budo ceeriin ah oo kayd ah
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Habka TVG ee quartz sapphire BF33 wafer wafer galaas feedh
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Kelida Crystal Silicon Wafer Si Substrate Type N/P Wafer Silikon Carbide Ikhtiyaar ah
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N-Nooca SiC Isku-dhafka Substrates Dia6inch monocrystaline tayo sare leh iyo substrate tayo hoose leh