Badeecadaha
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Dahaarka wafer-ka SOI ee silicon-ka ah ee 8-inji iyo 6-inji SOI (Silicon-On-Insulator)
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200mm SiC substrate-ka ah ee heerka 4H-N 8inch SiC wafer
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SiO2 Filim khafiif ah oo kuleyl ah Oxide Silicon Wafer 4 inji ah 6 inji ah 8 inji ah 12 inji
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Sapphire qubbad hufan Adkayn sare 9.0 u adkaysata xirashada iyo cadaadiska sare
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Substrate-ka Silicon-On-Insulator-ka ah ee SOI wuxuu saddex lakab u yahay Microelectronics-ka iyo Soo noqnoqoshada Raadiyaha.
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Tuubooyinka tuubooyinka safayr ee hufan ulaha iska caabin heerkul sare iska caabin cadaadis sare gudbin sare
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Dahaarka Barafka ee Sapphire IPL blocks 50*50*15mmt
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Tiirka Sapphire oo si buuxda u safaysan oo u adkaysta xirashada kiristaalo hal-hal ah oo hufan
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Giraanta wareegsan ee safayr ah oo adag oo xirasho sare leh
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Mashiinka xardho feer wareeg ah oo safayr ah oo CNC ah oo farsameynaya ul safayr ah
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Daaqad Sapphire yar oo laba jibbaaran oo feer ah
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Midab guduudan oo safayr guduudan ah oo Al2O3 ah oo loogu talagalay dhagaxa dhagaxa ah