Nooca p-nooca 4H/6H-P 3C-N Nooca SIC substrate 4inji 〈111〉± 0.5° Eber MPD
Nooca 4H/6H-P Substrates SiC Composite Shaxda halbeegga caadiga ah
4 dhexroor inji ah oo ah silikoonSubstrate-ka Karbide (SiC) Faahfaahinta
| Fasal | Wax soo saar eber MPD ah Darajada (Z) Darajada) | Waxsoosaarka Caadiga ah Darajada (P) Darajada) | Fasalka Madow (D Darajada) | ||
| Dhexroorka | 99.5 mm ~ 100.0 mm | ||||
| Dhumucda | 350 μm ± 25 μm | ||||
| Jihaynta Wafer-ka | Dhidibka ka baxsan: 2.0°-4.0° dhanka [11]20] ± 0.5° ee 4H/6H-P, Odhidibka n:〈111〉± 0.5° ee 3C-N | ||||
| Cufnaanta Tuubooyinka Yaryar | 0 cm-2 | ||||
| Iska caabin | nooca p-nooca 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| nooca n-nooca 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Jihada Fidsan ee Aasaasiga ah | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ± 2.0 mm | ||||
| Dhererka Fidsan ee Labaad | 18.0 mm ± 2.0 mm | ||||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW. laga bilaabo Prime flat±5.0° | ||||
| Ka-saarista Cidhifka | 3 mm | 6 mm | |||
| LTV/TTV/Qaanso/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Qalafsanaan | Boolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Dhererka wadarta ≤ 10 mm, dherer hal ≤2 mm | |||
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% | |||
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadajirka ah≤3% | |||
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |||
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ≤1 × dhexroorka wafer | |||
| Chips-ka Geesaha Sare ee Iftiinka Xoogga leh | Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm | 5 la oggol yahay, ≤1 mm midkiiba | |||
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Xoog Sare | Midna ma jiro | ||||
| Baakad | Cajalad badan oo wafer ah ama Weel Wafer Hal ah | ||||
Qoraalo:
※Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. # Xoqashada waa in lagu hubiyaa wejiga Si oo keliya.
Nooca P-nooca 4H/6H-P 3C-N substrate SiC ah oo leh 〈111〉± 0.5° jihayn iyo heerka Zero MPD ayaa si weyn loogu isticmaalaa codsiyada elektaroonigga ah ee waxqabadka sare leh. Gudbinta kulaylka ee aadka u fiican iyo danab jabitaan oo sarreeya ayaa ka dhigaya mid ku habboon elektaroonigga korontada, sida badhanka danab sare, kuwa rogroga, iyo kuwa beddela awoodda, oo ku shaqeeya xaalado aad u daran. Intaa waxaa dheer, iska caabbinta substrate-ka ee heerkulka sare iyo miridhku waxay hubisaa waxqabad deggan oo ka jira jawi adag. Jihaynta saxda ah ee 〈111〉± 0.5° waxay xoojisaa saxnaanta wax soo saarka, taasoo ka dhigaysa mid ku habboon aaladaha RF iyo codsiyada soo noqnoqda sare, sida nidaamyada radar iyo qalabka isgaarsiinta wireless-ka..
Faa'iidooyinka substrates-ka isku-dhafka ah ee N-type SiC waxaa ka mid ah:
1. Gudbinta Kulaylka Sare: Kala-baxa kulaylka oo hufan, taasoo ka dhigaysa mid ku habboon deegaannada heerkulka sare iyo codsiyada awoodda sare leh.
2. Danab Jaban oo Sare: Waxay hubisaa waxqabad la isku halleyn karo oo ku jira codsiyada danab sare sida kuwa wax beddela korontada iyo kuwa wax beddela.
3. Heerka Eber MPD (Cillad Tuubo Yaryar): Waxay damaanad qaadaysaa cilladaha ugu yar, iyadoo bixinaysa xasillooni iyo isku hallayn sare oo ku saabsan aaladaha elektaroonigga ah ee muhiimka ah.
4. Iska caabinta daxalka: Waa mid waara jawiyada adag, iyadoo hubinaysa shaqeyn muddo dheer ah xaaladaha adag.
5. Sax ah 〈111〉± 0.5° Jihaynta: Waxay u oggolaanaysaa isku-hagaajin sax ah inta lagu jiro wax-soo-saarka, hagaajinta waxqabadka qalabka ee codsiyada soo noqnoqda sare iyo RF.
Guud ahaan, nooca P-nooca 4H/6H-P 3C-N substrate SiC ah oo leh 〈111〉± 0.5° jihayn iyo heerka Zero MPD waa walax waxqabad sare leh oo ku habboon codsiyada elektaroonigga ah ee horumarsan. Gudbinta kulaylka ee aadka u fiican iyo danab jabitaan oo sarreeya ayaa ka dhigaya mid ku habboon qalabka elektaroonigga korontada sida badhanka danab sare, kuwa rogroga, iyo kuwa beddela. Heerka Zero MPD wuxuu hubiyaa cillado yar, isagoo bixinaya isku hallayn iyo xasillooni aaladaha muhiimka ah. Intaa waxaa dheer, iska caabbinta substrate-ka ee daxalka iyo heerkulka sare waxay hubisaa waarta jawiga adag. Jihaynta saxda ah ee 〈111〉± 0.5° waxay u oggolaanaysaa isku-hagaajin sax ah inta lagu jiro wax soo saarka, taasoo ka dhigaysa mid aad ugu habboon aaladaha RF iyo codsiyada soo noqnoqda sare.
Jaantus Faahfaahsan
