p-nooca 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

p-nooca 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5° Eber MPD Sawirka

Sharaxaad Gaaban:

Nooca P-nooca 4H/6H-P 3C-N nooca SiC substrate, 4-inji leh 〈111〉± 0.5° hanuuninta iyo Zero MPD (Cilladda Micro Pipe), waa qalab wax qabad sare leh oo loogu talagalay aaladda elektiroonigga ah ee horumarsan. wax soo saarka. Waxaa loo yaqaanaa kuleylkeeda heerkuleed ee heer sare ah, koronto burbursan oo sarreeya, iyo iska caabin xooggan heerkulka sare iyo daxalka, substrate-kani wuxuu ku habboon yahay qalabka elektiroonigga ah iyo codsiyada RF. Heerka Zero MPD wuxuu dammaanad qaadayaa cilladaha ugu yar, isagoo hubinaya isku halaynta iyo xasilloonida aaladaha waxqabadka sarreeya. Hanuuninteeda saxda ah 〈111〉± 0.5° waxay u oggolaanaysaa in si sax ah loo toosiyo inta lagu guda jiro wax-soo-saarka, taasoo ka dhigaysa mid ku habboon hababka wax-soo-saarka ee baaxadda leh. Substrate-kaan waxaa si weyn loogu isticmaalaa heerkul sare, koronto-sare, iyo aaladaha elegtarooniga ah ee soo noqnoqda, sida korantada, rogayaasha, iyo qaybaha RF.

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Tags Product

4H/6H-P Nooca SiC Substrates Composite Substrates Miis cabbirka guud

4 dhexroorka inch SiliconSubstrate-ka Carbide (SiC). Tilmaamid

Darajo			Wax soo saarka MPD eber Darajada (Z Darajo)	Wax soo saarka caadiga ah Darajada (P Darajo)	Dummy Fasalka (D Darajo)
Dhexroorka			99.5 mm ~ 100.0 mm
Dhumucda			350 μm ± 25 μm
Hanuuninta Wafer			dhidibka ka baxsan: 2.0°-4.0° dhanka [112(-)0] ± 0.5° loogu talagalay 4H/6H-P, On dhidibka:〈111〉± 0.5° ee 3C-N
Cufnaanta Dheef-yar			0 cm-2
iska caabin	p-nooca 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nooca 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Hanuuninta Flat Primary		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Dhererka Guriga aasaasiga ah			32.5 mm ± 2.0 mm
Dhererka Guriga Sare			18.0 mm ± 2.0 mm
Hanuuninta Guriga Sare			Silicon weji kor ah: 90° CW. ka yimid dabaqa Prime±5.0°
Ka saarida gees			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare			Midna		Dhererka isugeynta ≤ 10 mm, hal dherer≤2 mm
Taarikada Hex By Iftiin Xoogan Sare			Aagga wadarta ≤0.05%		Aagga isugeynta ≤0.1%
Meelo Badan Oo Iftiin Xoogan Sare leh			Midna		Aagga isugeynta≤3%
Kaarboon Muuqaal ah			Aagga wadarta ≤0.05%		Aagga isugeynta ≤3%
Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare			Midna		Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifka Sare ee Iftiinka Xooga			Midna lama oggola ≥0.2mm ballac iyo qoto dheer		5 waa la ogol yahay, ≤1 mm midkiiba
Wasakhaynta Silikoonka Dusha Sare ee Xooggiisa			Midna
Baakadaha			Cassette Multi-wafer ah ama Konteenar Wafer Keliya ah

Xusuusin:

※ Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. # xagashada waa in lagu fiiriyaa wejiga Si kaliya.

Nooca P-nooca 4H/6H-P 3C-N nooca 4-inch SiC substrate oo leh 〈111〉± 0.5° hanuuninta iyo eber MPD darajada ayaa si weyn loogu isticmaalaa codsiyada elektarooniga ah ee waxqabadka sareeyo. Korontada kuleylkeeda aadka u wanaagsan iyo korontada sare ee burburka ayaa ka dhigaysa mid ku habboon korantada elektiroonigga ah, sida furayaasha korantada sare, beddelayaasha, iyo beddelayaasha awoodda, oo ku shaqeynaya xaalado aad u daran. Intaa waxaa dheer, iska caabbinta substrate ee heerkulka sare iyo daxalka waxay hubisaa waxqabadka xasilloon ee jawiga adag. Hanuuninta saxda ah ee 〈111〉± 0.5° waxay kor u qaadaysaa saxnaanta wax soo saarka, taas oo ka dhigaysa mid ku habboon aaladaha RF iyo codsiyada soo noqnoqda, sida nidaamyada radar iyo qalabka isgaarsiinta wireless.

Faa'iidooyinka N-nooca SiC substrate-ka isku dhafan waxaa ka mid ah:

1. Heerarka Sare ee Heerarka: Kala-baxa kulaylka waxtarka leh, taas oo ka dhigaysa mid ku habboon jawiga heerkulka sare iyo codsiyada awoodda sare leh.
2. Korontada Burburka Sare: Waxay xaqiijisaa waxqabadka la isku halayn karo ee codsiyada korantada sare sida korantada iyo rogayaasha.
3. Zero MPD (Cilladda Micro Pipe) Darajooyinka: Waxay dammaanad qaadaysaa cilladaha ugu yar, siinta xasilloonida iyo isku halaynta sare ee aaladaha elektiroonigga ah ee muhiimka ah.
4. Iska-caabbinta Daxalka: Ku waara jawiga adag, hubinta shaqeynta muddada dheer ee xaaladaha baahida.
5. Saxan 〈111〉± 0.5 ° Hanuuninta: Waxay u ogolaataa toosinta saxda ah inta lagu jiro wax soo saarka, hagaajinta waxqabadka qalabka ee soo noqnoqoshada sare iyo codsiyada RF.

Guud ahaan, nooca P-nooca 4H/6H-P 3C-N nooca 4-inch SiC substrate oo leh 〈111〉± 0.5° hanuuninta iyo Zero MPD waa walax wax qabad sare leh oo ku habboon codsiyada elektiroonigga ah ee horumarsan. Kuleylkeeda heerkuleed ee ugu wanaagsan iyo korontada burburka sare waxay ka dhigaysaa mid ku habboon korantada elektiroonigga ah sida furayaasha korantada sare, beddelayaasha, iyo beddelayaasha. Darajada Zero MPD waxay hubisaa cilladaha ugu yar, siinta kalsoonida iyo xasilloonida aaladaha muhiimka ah. Intaa waxaa dheer, iska caabbinta substrate-ka ee daxalka iyo heerkulka sare waxay hubisaa adkeysiga jawiga adag. Hanuuninta saxda ah ee 〈111〉± 0.5° waxay u oggolaanaysaa toosinta saxda ah inta lagu jiro wax soo saarka, taasoo ka dhigaysa mid aad ugu habboon aaladaha RF iyo codsiyada soo noqnoqda.