8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucdiisuna tahay

8inch 200mm Silicon Carbide SiC Wafers 4H-N nooca wax soo saarka 500um dhumucda Sawirka

Sharaxaad Gaaban:

Shirkadda Shanghai Xinkehui Tech. Co., Ltd waxay bixisaa xulashada iyo qiimaha ugu fiican ee waferrada silikoon carbide ee tayada sare leh iyo substrates ilaa dhexroorka 8inch oo leh noocyo N- iyo kuwo-sulateri-sare ah. Shirkadaha aaladaha yar yar iyo kuwa weyn ee semiconductor iyo shaybaarada cilmi baarista adduunka oo dhan ayaa adeegsada oo ku tiirsan waferrada carbide silicone.

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200mm 8inch SiC Substrate Specification

Xajmiga: 8inch;

Dhexroorka: 200mm ± 0.2;

Dhumucda: 500um ± 25;

Hanuuninta dusha sare: 4 xagga [11-20] ± 0.5 °;

Jihaynta darajada:[1-100]±1°;

Qoto dheer: 1 ± 0.25mm;

Maroobuub: <1cm2;

Hex Plates: Midna lama ogola;

Iska caabin: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED:<6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: bed<1%

TTV≤15um;

Warp≤40um;

Qaansada≤25um;

Meelaha badan: ≤5%;

xoqin: <5 iyo Dhererka Isugaynta < 1 Dhexroor Wafer;

Chips/Indents: Midna ma ogola D>0.5mm Ballaca iyo Qoto dheer;

Dildilaaca: Midna;

Wasakh: Maya

Cidhifka wafer: Chamfer;

Dhammaadka dusha sare: Polish-ka laba-geesoodka ah, Si Face CMP;

Xirmooyinka: Cassette-wafer-badan ama Konteenarka Waferka Keliya;

Dhibaatooyinka hadda jira ee diyaarinta 200mm 4H-SiC crystals mainl

1) Diyaarinta tayada sare ee 200mm 4H-SiC abuur kiristaalo;

2) Xajmiga cabbirka weyn ee heerkulbeegga qaab-la'aanta iyo xakamaynta habka nukliyeerka;

3) Hufnaanta gaadiidka iyo kobcinta qaybaha gaaska ee ballaaran ee hababka koritaanka crystal;

4) Dildilaaca kristal iyo kororka cilladda oo ay keento culeyska kulaylka ee cabbirka weyn.

Si looga gudbo caqabadahan oo loo helo xalal tayo sare leh oo 200mm SiC ah ayaa la soo jeediyay:

Marka la eego 200mm abuur crystal diyaarinta, beer ku habboon heerkulka beerka, iyo ballaadhinta shirka ayaa la darsay oo loogu talagalay in lagu xisaabtamo tayada crystal iyo ballaadhinta size; Laga bilaabo 150mm SiC se:d crystal, samee soo-celinta abuurka crystal si aad si tartiib tartiib ah u ballaariso SiC crystasize ilaa ay ka gaarto 200mm; Iyada oo loo marayo korriin badan oo crystals ah iyo processiig, si tartiib tartiib ah u hagaaji tayada crystal ee aagga fidinta crystal, oo wanaaji tayada 200mm kiristaalo abuur.

Marka la eego 200mm crystal conductive iyo diyaarinta substrate, cilmi baaris ayaa hagaajisay heerkulka feld iyo qulqulka garoonka design ee crystalgrowth size weyn, qabtaan 200mm koriinka crystal SiC conductive, iyo xakamaynta isku mid ah doping. Ka dib habayn adag iyo qaabaynta crystal, 8-inji koronto ah oo 4H-SiC ah oo leh dhexroor caadi ah ayaa la helay. Ka dib markii la gooyo, shiidi, polishing, processing si aad u hesho wafers SiC 200mm leh dhumucdiisuna waa 525um ama wax ka badan.