8 inji SiC silicon carbide wafer 4H-N nooca 0.5mm heerka wax soo saarka heerka cilmi-baarista substrate gaar ah oo la safeeyey

Sharaxaad Gaaban:

Silicon carbide (SiC), oo sidoo kale loo yaqaan silicon carbide, waa semiconductor ka kooban silicon iyo kaarboon oo leh qaacidada kiimikada ee SiC. SiC waxaa loo isticmaalaa aaladaha elektarooniga ah ee semiconductor-ka ee ka shaqeeya heerkul sare ama cadaadis sare, ama labadaba. SiC sidoo kale waa mid ka mid ah qaybaha muhiimka ah ee LED-ka, waa substrate caadi ah oo loogu talagalay koritaanka aaladaha GaN, waxaana sidoo kale loo isticmaali karaa sidii weel kuleyl loogu talagalay LED-yada awoodda sare leh.
Substrate-ka carbide-ka silicon ee 8-inji ah waa qayb muhiim ah oo ka mid ah jiilka saddexaad ee walxaha semiconductor-ka, kaas oo leh astaamaha xoogga goobta burburka sare, hufnaanta kulaylka sare, heerka qulqulka sare ee elektaroonigga, iwm., wuxuuna ku habboon yahay sameynta aaladaha elektaroonigga ah ee heerkulka sare, danab sare, iyo kuwa awoodda sare leh. Meelaha ugu muhiimsan ee codsigeeda waxaa ka mid ah gawaarida korontada, gaadiidka tareenka, gudbinta iyo isbeddelka awoodda sare ee danab sare leh, sawir-qaadista, isgaarsiinta 5G, kaydinta tamarta, hawada sare, iyo xarumaha xogta awoodda xisaabinta AI.

Noo soo dir emayl

Astaamaha

Astaamaha ugu muhiimsan ee nooca 4H-N ee ah nooca 8-inch ee silicon carbide waxaa ka mid ah:

1. Cufnaanta Microtubule: ≤ 0.1/cm² ama ka hooseeya, sida cufnaanta Microtubule waxaa si weyn hoos loogu dhigay wax ka yar 0.05/cm² alaabada qaar.
2. Saamiga qaabka kiristaalka: Saamiga qaabka kiristaalka 4H-SiC wuxuu gaaraa 100%.
3. Iska caabin: 0.014 ~ 0.028 Ω·cm, ama ka xasilloon inta u dhaxaysa 0.015-0.025 Ω·cm.
4. Qalafsanaanta dusha sare: CMP Si Face Ra≤0.12nm.
5. Dhumuc: Badanaa 500.0±25μm ama 350.0±25μm.
6. Xagasha Chamfering: 25±5° ama 30±5° A1/A2 waxay ku xiran tahay dhumucda.
7. Cufnaanta kala-baxa guud: ≤3000/cm².
8. Wasakhowga birta dusha sare: ≤1E+11 atamka/cm².
9. Laablaabashada iyo kala-goynta: ≤ 20μm iyo ≤2μm, siday u kala horreeyaan.
Astaamahani waxay ka dhigaan substrate-ka carbide-ka silicon ee 8-inji ah inay leeyihiin qiimo codsi oo muhiim ah oo ku saabsan soo saarista aaladaha elektaroonigga ah ee heerkulka sare, soo noqnoqoshada sare, iyo kuwa awoodda sare leh.

Wafer silicon carbide ah oo 8 inji ah ayaa leh codsiyo dhowr ah.

1. Qalabka Korontada: Wafer-yada SiC waxaa si weyn loogu isticmaalaa soo saarista aaladaha elektaroonigga ah ee awoodda leh sida MOSFET-yada awoodda leh (transistors-yada birta-oxide-semiconductor), diode-yada Schottky, iyo modules-ka isku-dhafka awoodda. Iyada oo ay ugu wacan tahay kor u qaadista kulaylka sare, danabka burburka sare, iyo dhaqdhaqaaqa elektaroonigga sare ee SiC, aaladahani waxay gaari karaan beddel awood oo hufan, oo waxqabad sare leh jawi heerkul sare, danab sare, iyo soo noqnoqosho sare leh.

2. Qalabka Optoelectronic: Wafers-ka SiC waxay door muhiim ah ka ciyaaraan aaladaha optoelectronic-ka, oo loo isticmaalo soo saarista sawir-qaadayaasha, diode-yada laysarka, ilaha ultraviolet-ka, iwm. Sifooyinka sare ee indhaha iyo elektaroonigga ee Silicon carbide waxay ka dhigaan agabka la doorto, gaar ahaan codsiyada u baahan heerkul sare, mawjado sare, iyo heerarka awoodda sare.

3. Qalabka Soo Noqnoqda Raadiyaha (RF): Chips-ka SiC waxaa sidoo kale loo isticmaalaa in lagu soo saaro aaladaha RF sida amplifiers-ka awoodda RF, badhanka soo noqnoqoshada sare, dareemayaasha RF, iyo waxyaabo kaloo badan. Xasiloonida kulaylka sare ee SiC, astaamaha soo noqnoqoshada sare, iyo khasaaraha hooseeya waxay ka dhigayaan mid ku habboon codsiyada RF sida isgaarsiinta wireless-ka iyo nidaamyada radar-ka.

4. Elektarooniga heerkulka sare leh: Sababtoo ah xasilloonida kulaylka sare iyo dabacsanaanta heerkulka, wafers-ka SiC waxaa loo isticmaalaa in lagu soo saaro alaabada elektarooniga ah ee loogu talagalay inay ka shaqeeyaan jawi heerkul sare leh, oo ay ku jiraan elektarooniga awoodda heerkulka sare leh, dareemayaasha, iyo kontaroolayaasha.

Jidadka ugu muhiimsan ee isticmaalka substrate-ka 8-inji silicon carbide nooca 4H-N waxaa ka mid ah soo saarista aaladaha elektarooniga ah ee heerkulka sare, soo noqnoqoshada sare, iyo kuwa awoodda sare leh, gaar ahaan qaybaha elektarooniga baabuurta, tamarta qorraxda, soo saarista tamarta dabaysha, tareenada korontada ku shaqeeya, adeegayaasha, qalabka guryaha, iyo gawaarida korontada ku shaqeeya. Intaa waxaa dheer, aaladaha sida SiC MOSFETs iyo diodes-ka Schottky waxay muujiyeen waxqabad aad u wanaagsan oo ku saabsan soo noqnoqoshada beddelka, tijaabooyinka wareegga gaaban, iyo codsiyada inverter-ka, iyagoo kaxeynaya isticmaalkooda qalabka elektarooniga korontada ku shaqeeya.

XKH waxaa loo habeyn karaa dhumuc kala duwan iyadoo loo eegayo shuruudaha macaamiisha. Daawaynta dusha sare ee kala duwan iyo nadiifinta ayaa la heli karaa. Noocyo kala duwan oo daawaynta ah (sida daawaynta nitrogen) ayaa la taageeraa. XKH waxay bixin kartaa taageero farsamo iyo adeegyo la-talin si loo hubiyo in macaamiishu ay xallin karaan dhibaatooyinka habka isticmaalka. Substrate-ka carbide-ka silicon ee 8-inch wuxuu leeyahay faa'iidooyin muhiim ah marka la eego dhimista kharashka iyo awoodda la kordhiyay, taas oo yareyn karta kharashka jajabka cutubka qiyaastii 50% marka la barbar dhigo substrate-ka 6-inch. Intaa waxaa dheer, dhumucda korodhka ah ee substrate-ka 8-inch wuxuu ka caawiyaa yareynta leexashada joomatari iyo leexashada geesaha inta lagu jiro farsamaynta, taasoo hagaajinaysa wax soo saarka.