8 inch SiC silicon carbide wafer 4H-N nooca 0.5mm wax soo saarka darajada cilmi baarista substrate caadadii

8 inch SiC silicon carbide wafer 4H-N nooca 0.5mm wax soo saarka darajada cilmi baarista caadadii substrate dhalaalaya

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Silicon carbide (SiC), oo sidoo kale loo yaqaan silikon carbide, waa semiconductor ka kooban silikoon iyo kaarboon leh qaacidada kiimikada ee SiC. SiC waxaa loo isticmaalaa qalab elektaroonik ah oo ku shaqeeya heerkul sare ama cadaadis sare, ama labadaba. SiC sidoo kale waa mid ka mid ah qaybaha muhiimka ah ee LED-yada, waa substrate caadi ah oo koraya aaladaha GaN, sidoo kale waxaa loo isticmaali karaa sidii weel kulaylka LED-yada awoodda sare leh.
Substrate 8-inch silicon carbide substrate waa qayb muhiim ah oo ka mid ah jiilka seddexaad ee agabka semiconductor, kaas oo leh astaamaha burburka sare ee xoogga goobta, heerkulka sare ee kuleylka, heerka qulqulka korantada elektiroonigga ah, iwm, oo ku habboon samaynta heerkul sare, korantada sare, iyo qalabka elegtarooniga ah ee tamarta sare leh. Qaybaha codsiga ee ugu muhiimsan waxaa ka mid ah baabuurta korantada, gaadiidka tareenka, gudbinta korantada sare iyo isbeddelka, sawir-qaadista, isgaarsiinta 5G, kaydinta tamarta, hawada hawada, iyo xarumaha xogta kombuyuutarada AI core.

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Astaamaha ugu muhiimsan ee 8-inch silicon carbide substrate 4H-N nooca waxaa ka mid ah:

1. Cufnaanta Microtubule: ≤ 0.1/cm² ama ka hooseeya, sida cufnaanta microtubule ayaa si weyn hoos loogu dhigay in ka yar 0.05/cm² alaabta qaarkood.
2. Saamiga qaabka Crystal: 4H-SiC saamiga qaabka crystal waxa uu gaadhay 100%.
3. Iska caabin: 0.014 ~ 0.028 Ω·cm, ama aad u deggan inta u dhaxaysa 0.015-0.025 Ω·cm.
4. Qalafsanaanta dusha sare: CMP Si Face Ra≤0.12nm.
5. Dhumucdiisuna: Sida caadiga ah 500.0 ± 25μm ama 350.0 ± 25μm.
6. xagasha Chamfering: 25 ± 5 ° ama 30 ± 5 ° ee A1 / A2 ku xiran tahay dhumucda.
7. Isku geynta cufnaanta kala-baxa: ≤3000/cm².
8. Wasakhda birta dushiisa: ≤1E+11 atamka/cm².
9. Laacidda iyo bogga dagaalka: ≤ 20μm iyo ≤2μm, siday u kala horreeyaan.
Sifooyinkan ayaa ka dhigaya 8-inch substrates carbide silicone waxay leeyihiin qiime codsi oo muhiim ah soo saarista heerkul sare, soo noqnoqoshada, iyo aaladaha elektiroonigga ah ee awoodda sare leh.

8inch silicon carbide wafer wuxuu leeyahay codsiyo badan.

1. Qalabka korantada: Waferrada SiC ayaa si weyn loogu isticmaalaa soo saarista qalabka elektiroonigga ah sida awooda MOSFETs (birta-oxide-semiconductor field-effect transistor), diodes Schottky, iyo modules-ka isdhexgalka awoodda. Iyada oo ay ugu wacan tahay dhaqdhaqaaqa kulaylka sare, korantada burburka sare, iyo dhaqdhaqaaqa sare ee elektiroonigga ah ee SiC, aaladahaani waxay gaari karaan beddelka awood wax ku ool ah oo hufan, heerkul sare, koronto-sare, iyo jawi-sare.

2. Qalabka Optoelectronic: Wafers SiC waxay door muhiim ah ka ciyaaraan aaladaha optoelectronic, loo isticmaalo soo saarista sawir-qaadayaasha, diodes laser, ilaha ultraviolet, iwm. soo noqnoqoshada sare, iyo heerka awood sare.

3. Soo noqnoqoshada Raadiyaha (RF) Aaladaha: Chips-ka SiC ayaa sidoo kale loo isticmaalaa in lagu soo saaro aaladaha RF sida cod-weyneyaasha RF-ga, furayaasha soo noqnoqda, dareemayaasha RF, iyo in ka badan. Deganaanshiyaha kulaylka sare ee SiC, sifooyinka soo noqnoqda sare, iyo khasaaraha hooseeya ayaa ka dhigaya mid ku habboon codsiyada RF sida isgaarsiinta wireless-ka iyo nidaamyada radar.

4.Heerkulka sare ee elektiroonigga ah: Sababtoo ah xasilloonida kuleylka sare iyo dabacsanaanta heerkulka, SiC wafers waxaa loo isticmaalaa in lagu soo saaro alaabada elektiroonigga ah ee loogu talagalay in lagu shaqeeyo jawi heerkul sare ah, oo ay ku jiraan korantada heerkulka sare ee korontada, dareemayaasha, iyo kontaroolayaasha.

Wadooyinka codsiga ugu weyn ee 8-inch silicon carbide substrate 4H-N nooca waxaa ka mid ah soo saarida heerkul sare, soo noqnoqoshada sare, iyo aaladaha elektiroonigga ah ee awoodda sare leh, gaar ahaan dhinacyada qalabka elektiroonigga ah, tamarta qorraxda, tamarta dabaysha, korantada gawaarida, server-yada, qalabka guriga, iyo baabuurta korontada. Intaa waxaa dheer, aaladaha ay ka midka yihiin SiC MOSFETs iyo Schottky diodes waxay muujiyeen waxqabad aad u wanaagsan marka la beddelo wareegyada, tijaabooyinka wareegga gaaban, iyo codsiyada beddelka, iyagoo ku kaxeynaya isticmaalkooda korantada elektiroonigga ah.

XKH waxaa lagu habeyn karaa dhumucyo kala duwan iyadoo loo eegayo shuruudaha macaamiisha. Qallafsanaanta dusha kala duwan iyo daawaynta dhalaalaysa ayaa diyaar ah. Noocyada kala duwan ee doping (sida nitrogen doping) waa la taageeraa. XKH waxay bixin kartaa taageero farsamo iyo adeegyo la-talin si loo hubiyo in macaamiishu ay xallin karaan dhibaatooyinka habka isticmaalka. Substrate-ka silikoon carbide ee 8-inji ah wuxuu leeyahay faa'iidooyin la taaban karo marka la eego dhimista qiimaha iyo korodhka awoodda, taas oo yarayn karta qiimaha jajabka cutubka qiyaastii 50% marka la barbar dhigo substrate-ka 6-inch. Intaa waxaa dheer, dhumucda korodhka ah ee substrate-ka 8-inji waxay kaa caawinaysaa yaraynta weecsanaanta joomatari iyo cidhifyada cidhifyada inta lagu jiro mishiinka, taas oo hagaajinaysa dhalidda.