6inch 150mm Silicon Carbide SiC Wafers 4H-N nooca loogu talagalay MOS ama Cilmi-baarista Soo saarista SBD

Sharaxaad Gaaban:

Substrate-ka silikoon carbide ee 6-inji ah waa walxo waxqabad sare leh oo leh astaamo jireed iyo kiimiko oo aad u wanaagsan. Waxaa laga soo saaray silikoon carbide oo nadiif ah oo nadiif ah oo hal kiristaalo ah, waxay soo bandhigaysaa kulaylka sareynta, xasiloonida farsamada, iyo iska caabinta heerkulka sare. Substrate-kan, oo lagu sameeyay habab wax soo saar sax ah iyo agab tayo sare leh, ayaa noqday agabka la door bidayay ee samaynta aaladaha elektiroonigga ah ee waxtarka sare leh ee dhinacyada kala duwan.

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Faahfaahinta Alaabta

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Goobaha Codsiga

6-inji silikoon carbide hal substrate crystal ayaa door muhiim ah ka ciyaara warshado badan. Marka hore, waxaa si weyn loogu isticmaalaa warshadaha semiconductor-ka soo saarista aaladaha elektiroonigga ah ee awoodda sare leh sida transistor-ka korantada, wareegyada isku dhafan, iyo korantada. Heerkulkeeda sare ee kuleylka iyo iska caabbinta heerkulka sare waxay awood u siineysaa kala-baxa kulaylka wanaagsan, taasoo keentay hufnaanta iyo isku halaynta. Marka labaad, waferrada silikoon carbide waxay lagama maarmaan u yihiin goobaha cilmi-baarista ee horumarinta alaabada iyo qalabka cusub. Intaa waxaa dheer, wafer-ka silikoon carbide wuxuu ka helaa codsiyo ballaaran oo ku saabsan saaxadda optoelectronics, oo ay ku jiraan soo saarista LED-yada iyo diodes-ka laysarka.

Tilmaamaha Alaabta

Substrate-ka silikoon carbide ee 6-inji ah wuxuu leeyahay dhexroor 6 inji (qiyaastii 152.4 mm). Qalafsanaanta dusha sare waa Ra <0.5 nm, dhumucduna waa 600 ± 25 μm. Substrate-ka waxaa lagu habeyn karaa nooca N-nooca ama nooca P-ga, iyadoo lagu saleynayo shuruudaha macaamiisha. Waxaa intaa dheer, waxay soo bandhigaysaa xasillooni farsamo oo gaar ah, oo awood u leh inay u adkeyso cadaadiska iyo gariirka.

Dhexroorka		150 ± 2.0mm (6inch)
Dhumucda		350 μm±25μm
Hanuuninta		Dhinaca dhidibka: <0001>±0.5°		Xagasha ka baxsan:4.0° dhanka 1120±0.5°
Noocyo badan		4H
Iska caabin (Ω·cm)	4H-N	0.015 ~ 0.028 Ω·cm/0.015 ~ 0.025ohm·cm
	4/6H-SI	>1E5
Hanuuninta fidsan ee aasaasiga ah		{10-10}±5.0°
Dhererka fidsan ee aasaasiga ah (mm)		47.5 mm±2.5 mm
Cidhif		Chamfer
TTV/Bow/Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-face)		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm*10mm)	≤5μm (10mm*10mm)		≤10μm (10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Diirka liimiga ah/godadka/ dildilaaca/ wasakhowga/ wasakhowga/xariifnimada		Midna	Midna		Midna
gallad		Midna	Midna		Midna

Substrate-ka silikoon carbide ee 6-inji ah waa walxo waxqabad sare leh oo si ballaaran loogu isticmaalo warshadaha semiconductor, cilmi-baarista, iyo warshadaha optoelectronics. Waxay bixisaa kulaylka kuleylka heer sare ah, xasillooni farsamo, iyo iska caabin heerkul sare ah, taasoo ka dhigaysa mid ku habboon samaynta aaladaha elektiroonigga ah ee awoodda sare leh iyo cilmi-baarista alaabada cusub. Waxaan bixinaa tilmaamo kala duwan iyo doorashooyin gaar ah si aan u daboolno baahiyaha macaamiisha kala duwan.Nala soo xiriir si aad u hesho faahfaahin dheeraad ah oo ku saabsan wafers carbide silicon!