Wafers 6 inji ah 150mm Silicon Carbide SiC ah oo 4H-N ah oo loogu talagalay MOS ama SBD Cilmi-baarista Wax-soo-saarka iyo darajada Dummy

6 inji 150mm Silicon Carbide SiC Wafers 4H-N oo loogu talagalay Cilmi-baarista Wax-soo-saarka MOS ama SBD iyo darajada Dummy Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Substrate-ka hal-abuurka ah ee silicon carbide ee 6-inji ah waa walax waxqabad sare leh oo leh sifooyin jireed iyo kiimiko oo aad u fiican. Waxaa laga sameeyay walxo keli ah oo silicon carbide ah oo saafi ah, waxay muujisaa kuleyl aad u sarreeya, xasillooni farsamo, iyo iska caabin heerkul sare. Substrate-kan, oo laga sameeyay hababka wax soo saarka saxda ah iyo agab tayo sare leh, ayaa noqday agabka ugu habboon ee lagu sameeyo aaladaha elektaroonigga ah ee waxtarka sare leh ee dhinacyo kala duwan.

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Astaamaha

Goobaha Codsiga

Substrate-ka keli ah ee silicon carbide-ka ee 6-inji ah ayaa door muhiim ah ka ciyaara warshado badan. Marka hore, waxaa si weyn loogu isticmaalaa warshadaha semiconductor-ka si loo sameeyo aaladaha elektaroonigga ah ee awoodda sare leh sida transistors-ka awoodda sare leh, wareegyada isku dhafan, iyo modules-ka awoodda. Gudbinta kulaylka sare iyo iska caabbinta heerkulka sare waxay suurtogal ka dhigaysaa kala-baxa kulaylka oo wanaagsan, taasoo keenta hufnaan iyo isku hallayn la hagaajiyay. Marka labaad, wafers-ka silicon carbide-ka ayaa lagama maarmaan u ah goobaha cilmi-baarista ee horumarinta agabyada iyo aaladaha cusub. Intaa waxaa dheer, wafer-ka silicon carbide-ka wuxuu helaa codsiyo ballaaran oo ku saabsan optoelectronics, oo ay ku jiraan soo saarista LED-yada iyo diode-yada laysarka.

Qeexitaannada Badeecada

Substrate-ka keli ah ee silicon carbide ee 6-inji ah wuxuu leeyahay dhexroor dhan 6 inji (qiyaastii 152.4 mm). Daloollada dusha sare waa Ra < 0.5 nm, dhumucdiisuna waa 600 ± 25 μm. Substrate-ka waxaa loo habeyn karaa qaab-dhismeedka nooca N ama P, iyadoo lagu saleynayo shuruudaha macaamiisha. Intaa waxaa dheer, wuxuu muujiyaa xasillooni farsamo oo heer sare ah, oo awood u leh inay u adkaysato cadaadiska iyo gariirka.

Dhexroorka		150±2.0mm(6inji)
Dhumucda		350 μm±25μm
Jihaynta		Dhidibka: <0001>±0.5°		Dhidibka ka baxsan: 4.0° ilaa 1120±0.5°
Nooc polytype ah		4H
Iska caabin (Ω · cm)	4H-N	0.015 ~ 0.028 Ω·cm/0.015 ~ 0.025ohm·cm
	4/6H-SI	>1E5
Jihada fidsan ee koowaad		{10-10}±5.0°
Dhererka fidsan ee aasaasiga ah (mm)		47.5 mm±2.5 mm
Gees		Chamfer
TTV/Qaanso/Warp (um)		≤15 / ≤40 / ≤60
Hore ee AFM (Si-wejiga)		Boolish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm*10mm)	≤5μm (10mm*10mm)		≤10μm (10mm*10mm)
TV-ga		≤5μm	≤10μm		≤15μm
Diirka liinta/godadka/dillaaca/wasakhowga/ wasakhda/xargaha/xargaha		Midna ma jiro	Midna ma jiro		Midna ma jiro
meelo aan la taaban karin		Midna ma jiro	Midna ma jiro		Midna ma jiro

Substrate-ka keli ah ee silicon carbide-ka ah ee 6-inji ah waa walax waxqabad sare leh oo si weyn loogu isticmaalo warshadaha semiconductor-ka, cilmi-baarista, iyo optoelectronics-ka. Waxay bixisaa kuleyl aad u fiican, xasillooni farsamo, iyo iska caabin heerkul sare leh, taasoo ka dhigaysa mid ku habboon soo saarista aaladaha elektaroonigga ah ee awoodda sare leh iyo cilmi-baarista agabka cusub. Waxaan bixinnaa qeexitaanno kala duwan iyo ikhtiyaarro habayn si loo daboolo baahiyaha macaamiisha kala duwan.Nala soo xiriir si aad u hesho faahfaahin dheeraad ah oo ku saabsan buskudka carbide-ka ee silicon!