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6 inch SiC kiristaalo ah oo wax qabad leh oo ku yaal polycrystalline SiC substrate ka kooban Dhexroor 150mm P nooca N

6 inch SiC kiristaalo ah oo wax qabad leh oo ku yaal polycrystalline SiC substrate substrate Dhexroor 150mm P nooca N nooca Sawirka
  • 6 inch SiC kiristaalo ah oo wax qabad leh oo ku yaal polycrystalline SiC substrate ka kooban Dhexroor 150mm P nooca N
  • 6 inch SiC kiristaalo ah oo wax qabad leh oo ku yaal polycrystalline SiC substrate ka kooban Dhexroor 150mm P nooca N

Sharaxaad Gaaban:

6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite substrate waxay ka dhigan tahay xal walxo silikoon carbide (SiC) cusub oo loogu talagalay aaladaha korantada ee awooda sare, heerkulka sare, iyo soo noqnoqda sare. Substrate-kani waxa uu leeyahay lakab firfircoon oo hal-crystal SiC ah oo ku xidhan saldhiga SiC ee polycrystalline iyada oo loo marayo habab khaas ah, isku darka guryaha sare ee korantada ee monocrystalline SiC iyo faa'iidooyinka kharashka polycrystalline SiC.
Marka la barbar dhigo substrate-ka monocrystalline buuxa ee SiC ee caadiga ah, 6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite substrate wuxuu ilaaliyaa dhaqdhaqaaqa elektaroonigga sare iyo iska caabinta korantada sare iyada oo si weyn hoos u dhigaysa kharashaadka wax soo saarka. Cabbirkeeda wafer ee 6-inch (150 mm) wuxuu xaqiijiyaa waafaqid khadadka wax soo saarka semiconductor ee jira, taasoo awood u siineysa wax soo saar la miisaami karo. Intaa waxaa dheer, nashqadeynta korantada waxay u oggolaaneysaa in si toos ah loogu isticmaalo soo saarista aaladaha korantada (tusaale, MOSFETs, diodes), taasoo meesha ka saareysa baahida loo qabo hababka doping-ga dheeriga ah iyo fududeynta socodka shaqada ee wax soo saarka.


Faahfaahinta Alaabta

Tags Product

Xuduudaha farsamada

Cabbirka:

6 inji

Dhexroorka:

150 mm

Dhumucda:

400-500 μm

Halbeegyada Filimka Monocrystalline SiC

Nooca Poly:

4H-SiC ama 6H-SiC

Isku-darka Doping:

1×10¹⁴ - 1×10¹⁸ cm⁻³

Dhumucda:

5-20 μm

Iska caabinta xaashida:

10-1000 Ω/sq

Dhaqdhaqaaqa Electron:

800-1200 cm²/Vs

Dhaqdhaqaaqa godka:

100-300 cm²/Vs

Halbeegyada lakabka ee Polycrystalline SiC Buffer

Dhumucda:

50-300 μm

Habdhaqanka Kulaylka:

150-300 W/m·K

Halbeegyada Substrate-ka Monocrystalline SiC

Nooca Poly:

4H-SiC ama 6H-SiC

Isku-darka Doping:

1×10¹⁴ - 1×10¹⁸ cm⁻³

Dhumucda:

300-500 μm

Cabbirka Hadhuudhka:

> 1 mm

Dusha sare:

<0.3 mm RMS

Farsamada & Guryaha Korontada

Adag:

9-10 Mohs

Xoogga Isku-buufinta:

3-4 GPA

Xoogga Jilitaanka:

0.3-0.5 GPA

Xoogga Goobta Burburinta:

> 2 MV/cm

Wadarta Dulqaadashada Qiyaasta:

> 10 Mudane

Iska caabinta Saamaynta Dhacdada Kaliya:

> 100 MeV·cm²/mg

Habdhaqanka Kulaylka:

150-380 W/m·K

Xaddiga Heerkulka ee shaqaynaya:

-55 ilaa 600°C

 

Astaamaha Muhiimka ah

6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite wuxuu bixiyaa dheelitirnaan gaar ah oo qaab dhismeedka iyo waxqabadka, taasoo ka dhigaysa mid ku haboon baahida jawiga warshadaha:

1.Qiimaha-Wax-ku-oolnimada: Saldhigga polycrystalline SiC wuxuu si weyn u yareynayaa kharashyada marka la barbar dhigo monocrystalline SiC-buuxa, halka lakabka firfircoon ee monocrystalline SiC uu hubinayo waxqabadka heerka-qalabka, oo ku habboon codsiyada xasaasiga ah.

2.Guryaha Korontada ee Gaarka ah: Lakabka monocrystalline SiC waxa uu muujiyaa dhaq-dhaqaaqa side sare (>500 cm²/V·s) iyo cufnaanta cilladda oo hooseeya, taageerta hawl-qabadka qalabka-soo noqnoqda iyo awoodda sare.

3.High-Temperature Stability: SiC's caabbinta heerkulka sare ee dabiiciga ah (> 600 ° C) waxay hubisaa in substrate-ka isku-dhafan uu ku sii ahaado mid xasilloon oo ku jira xaalado aad u daran, taasoo ka dhigaysa mid ku habboon baabuurta korontada iyo codsiyada warshadaha warshadaha.

4.6-inji Cabbirka Waferka La Helay: Marka la barbar dhigo 4-inch substrates SiC, qaabka 6-inch wuxuu kordhiyaa wax-soo-saarka jajabka in ka badan 30%, hoos u dhigista kharashyada qalabka halbeegga ah.

5.Conductive Design: Pre-doped N-nooca ama lakabyada P-nooca waxay yareeyaan talaabooyinka dhejinta ion ee wax soo saarka qalabka, hagaajinta waxtarka wax soo saarka iyo wax-soo-saarka.

6.Superior Thermal Management: Polycrystalline SiC saldhigga kuleylka kuleylka (~ 120 W / m · K) wuxuu la socdaa monocrystalline SiC, isagoo si wax ku ool ah u wajahaya caqabadaha kuleylka kuleylka ee aaladaha awoodda sare leh.

Tilmaamahani waxay dhigayaan 6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite substrate sida xal tartan u ah warshadaha sida tamarta la cusboonaysiin karo, gaadiidka tareenka, iyo hawada sare.

Codsiyada aasaasiga ah

6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite polycrystalline ayaa si guul leh loo geeyay dhowr goobood oo baahida sare loo qabo:
1.Electric Vehicle Powertrains: Waxaa loo isticmaalaa koronto-sare SiC MOSFETs iyo diodes si kor loogu qaado wax ku oolnimada inverter iyo kordhiyo baaxadda batteriga (tusaale, Tesla, qaababka BYD).

2.Industrial Motor Drives: Waxay u sahlaysa heerkulka sare, korantada sare ee isbeddelka-soo noqnoqda, yaraynta isticmaalka tamarta mashiinnada culus iyo marawaxadaha dabaysha.

3.Photovoltaic Inverters: Qalabka SiC wuxuu hagaajiyaa waxtarka beddelka qoraxda (> 99%), halka substrate-ka isku dhafan uu sii yareynayo kharashka nidaamka.

4.Tareenka Gaadiidka: Codsaday beddelayaasha jilitaanka ee nidaamka tareenka xawaaraha sare leh iyo tareenada dhulka hoostiisa mara, oo bixiya iska caabbinta korantada sare (> 1700V) iyo qaababka qaabaysan.

5.Aerospace: Ku habboon nidaamyada tamarta dayax-gacmeedka iyo wareegyada xakamaynta mishiinka diyaaradaha, oo awood u leh inay u adkeystaan ​​heerkulka xad-dhaafka ah iyo shucaaca.

Soo saarista wax ku oolka ah, 6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite wuxuu si buuxda ula jaan qaadayaa habka caadiga ah ee aaladaha SiC (tusaale, lithography, etching), una baahan maalgalin raasumaal oo dheeri ah.

Adeegyada XKH

XKH waxay siisaa taageero dhamaystiran 6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite, oo daboolaya R&D ilaa wax soo saarka guud:

1.Customization: Dhumucda lakabka monocrystalline ee la hagaajin karo (5-100 μm), xoojinta doping (1e15-1e19 cm⁻³), iyo hanuuninta crystal (4H/6H-SiC) si loo buuxiyo shuruudaha qalabka kala duwan.

2.Wafer Processing: Sahayda badan ee 6-inch substrates oo leh adeegyada khafiifinta dhabarka iyo biraynta ee is dhexgalka fur-iyo-ciyaaraha.

3. Xaqiijinta Farsamada: Waxaa ku jira falanqaynta crystallinity XRD, Imtixaanka saamaynta Hall, iyo cabbirka caabbinta kulaylka si loo dedejiyo shahaadooyinka alaabta.

4.Rapid Prototyping: 2- ilaa 4-inji muunado (hab isku mid ah) oo loogu talagalay hay'adaha cilmi-baarista si loo dardar-geliyo wareegyada horumarinta.

5. Failure Analysis & Optimization: Heer Material Solution for processing challenges (tusaale, cilladaha lakabka epitaxial).

Hadafkayagu waa inaan dhisno 6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite substrate sida xalka wax qabad ee la door bidayay ee korantada SiC, anagoo bixinayna taageero dhamaadka-ilaa-dhamaadka ah laga bilaabo prototyping ilaa wax soo saarka mugga.

Gabagabo

6-inch monocrystalline conductive SiC on polycrystalline SiC substrate composite substrate waxa uu gaadhaa dheellitir horudhac ah oo u dhexeeya waxqabadka iyo kharashka iyada oo loo marayo qaabdhismeedkeeda cusub ee mono/polycrystalline. Sida baabuurta korantada ay u bataan iyo horumarka warshadaha 4.0, substrate-kani wuxuu bixiyaa aasaas walxo la isku halayn karo oo loogu talagalay korantada soo socota ee elektiroonigga ah. XKH waxay soo dhawaynaysaa iskaashiga si loo sii sahamiyo kartida tignoolajiyada SiC.

6inch hal crystal SiC on polycrystalline SiC substrate composite 2
6inch hal crystal SiC on polycrystalline SiC substrate composite 3
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