6 inji oo kiristaalo keli ah oo wata SiC oo ku yaal polycrystalline SiC substrate isku dhafan Dhexroorka 150mm Nooca P nooca N

Sharaxaad Gaaban:

Qalabka 6-inji ah ee monocrystalline SiC ee ku jira polycrystalline SiC substrate-ka wuxuu matalaa xal cusub oo silicon carbide (SiC) ah oo loogu talagalay aaladaha elektaroonigga ah ee awoodda sare leh, heerkulka sare leh, iyo kuwa soo noqnoqda sare leh. Qalabkani wuxuu leeyahay lakab firfircoon oo hal-crystal ah oo SiC ah oo ku xiran saldhig polycrystalline SiC ah iyada oo loo marayo habab gaar ah, oo isku daraya sifooyinka korantada ee sare ee monocrystalline SiC iyo faa'iidooyinka kharashka ee polycrystalline SiC.
Marka la barbardhigo substrates-ka SiC ee monocrystalline-ka caadiga ah, SiC-ga monocrystalline-ka ah ee 6-inji ah ee ku jira substrate-ka isku-dhafka ah ee SiC wuxuu ilaaliyaa dhaqdhaqaaqa elektaroonigga sare iyo iska caabbinta danab-sare iyadoo si weyn u dhimaysa kharashyada wax soo saarka. Cabbirkiisa wafer-ka ah ee 6-inji ah (150 mm) wuxuu hubiyaa iswaafajinta khadadka wax soo saarka semiconductor-ka ee jira, taasoo suurtogalinaysa wax soo saarka la miisaami karo. Intaa waxaa dheer, naqshadda gudbiyaha waxay u oggolaanaysaa isticmaalka tooska ah ee wax soo saarka qalabka korontada (tusaale ahaan, MOSFETs, diodes), taasoo meesha ka saaraysa baahida loo qabo hababka daawada dheeraadka ah iyo fududeynta socodka shaqada wax soo saarka.

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Astaamaha

Xuduudaha farsamada

Cabbirka:	6 inji
Dhexroorka:	150 mm
Dhumucda:	400-500 μm
Halbeegyada Filimka Monocrystalline SiC
Nooc boolbare ah:	4H-SiC ama 6H-SiC
Xoogga saarista Doping-ka:	1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³
Dhumucda:	5-20 μm
Iska caabbinta Xaashida:	10-1000 Ω/sq
Dhaqdhaqaaqa Elektarooniga:	800-1200 cm²/V
Dhaqdhaqaaqa Godka:	100-300 cm²/V
Xawaaraha Lakabka Kaydka Polycrystalline SiC
Dhumucda:	50-300 μm
Qaboojinta Kulaylka:	150-300 W/m·K
Halbeegyada Substrate-ka ee Monocrystalline SiC
Nooc boolbare ah:	4H-SiC ama 6H-SiC
Xoogga saarista Doping-ka:	1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³
Dhumucda:	300-500 μm
Cabbirka Badarka:	> 1 mm
Qalafsanaanta Dusha sare:	< 0.3 mm RMS
Sifooyinka Farsamada & Korontada
Adkaanta:	9-10 Mohs
Xoogga Cadaadiska:	3-4 GPA
Xoogga Tijaabada:	0.3-0.5 GPA
Xoogga Goobta Burburka:	> 2 MV/cm
Wadarta Dulqaadka Qiyaasta:	> 10 Mrad
Iska caabbinta Saamaynta Dhacdada Keliga ah:	> 100 MeV·cm²/mg
Qaboojinta Kulaylka:	150-380 W/m·K
Kala duwanaanshaha Heerkulka Hawlgalka:	-55 ilaa 600°C

Astaamaha Muhiimka ah

6-inji oo ah monocrystalline SiC oo ku taal substrate-ka polycrystalline SiC wuxuu bixiyaa dheelitirnaan gaar ah oo qaab-dhismeedka agabka iyo waxqabadka, taasoo ka dhigaysa mid ku habboon jawi warshadeed oo adag:

1. Waxtarka Kharashka: Saldhigga Polycrystalline SiC wuxuu si weyn hoos ugu dhigaa kharashyada marka la barbar dhigo SiC-ga monocrystalline-ka buuxa, halka lakabka firfircoon ee monocrystalline SiC uu hubiyo waxqabadka heerka qalabka, oo ku habboon codsiyada xasaasiga ah ee kharashka.

2. Sifooyinka Korontada ee Gaarka ah: Lakabka SiC ee monocrystalline wuxuu muujiyaa dhaqdhaqaaq side sare (>500 cm²/V·s) iyo cufnaan cilladaysan oo hooseeya, taasoo taageerta hawlgalka qalabka ee soo noqnoqda sare iyo awoodda sare leh.

3. Xasiloonida Heerkulka Sare: Iska caabbinta heerkulka sare ee SiC (>600°C) waxay hubisaa in substrate-ka isku-dhafan uu xasilloon yahay xaaladaha daran, taasoo ka dhigaysa mid ku habboon gawaarida korontada iyo codsiyada matoorada warshadaha.

Cabbirka Wafer-ka Caadiga ah ee 4.6-inji: Marka la barbardhigo substrate-ka SiC ee dhaqameed ee 4-inji ah, qaabka 6-inji wuxuu kordhiyaa wax-soo-saarka jajabka in ka badan 30%, taasoo yaraynaysa kharashyada qalabka cutub kasta.

5. Naqshadeynta Laydhka: Lakabyada nooca N-nooca ama nooca P-ga ee hore loo sii sameeyay waxay yareeyaan tallaabooyinka gelinta ion-ka ee wax soo saarka qalabka, iyagoo hagaajinaya waxtarka wax soo saarka iyo wax soo saarka.

6. Maareynta Kulaylka Sare: Korontada kulaylaha ee saldhigga polycrystalline SiC (~120 W/m·K) waxay u dhowdahay kan monocrystalline SiC, iyadoo si wax ku ool ah wax uga qabanaysa caqabadaha kala firdhinta kulaylka ee aaladaha awoodda sare leh.

Astaamahani waxay SiC-ga monocrystalline ee 6-inji ah ku dhejiyaan substrate-ka isku-dhafka ah ee SiC ee polycrystalline sida xal tartan ah oo loogu talagalay warshadaha sida tamarta la cusboonaysiin karo, gaadiidka tareenka, iyo hawada sare.

Codsiyada Aasaasiga ah

Qalabka monocrystalline SiC ee 6-inji ah ee gudbiya walxaha ku jira ee polycrystalline SiC ayaa si guul leh loogu adeegsaday dhowr goobood oo baahi weyn loo qabo:
1. Tareenada Korontada ee Gawaarida: Waxaa loo isticmaalaa MosfET-yada SiC ee danab sare leh iyo diode-yada si loo xoojiyo hufnaanta inverter-ka loona kordhiyo baaxadda baytariga (tusaale ahaan, moodooyinka Tesla, BYD).

2. Wadayaasha Matoorada Warshadaha: Waxay awood u siisaa modules-ka korontada ee heerkulka sare leh, kuwa xawaaraha sare leh, iyagoo yareynaya isticmaalka tamarta ee mashiinnada culus iyo matoorada dabaysha.

3. Inverters-ka sawir-qaadista: Qalabka SiC wuxuu hagaajiyaa hufnaanta beddelka qorraxda (>99%), halka substrate-ka isku-dhafan uu sii yareeyo kharashyada nidaamka.

4. Gaadiidka Tareenka: Waxaa lagu dabaqay qalabka wax lagu beddelo ee loogu talagalay nidaamyada tareenka xawaaraha sare leh iyo kuwa tareenka dhulka hoostiisa mara, iyagoo bixiya iska caabin koronto sare leh (>1700V) iyo arrimo qaabaysan.

5. Hawada Sare: Ku habboon nidaamyada korontada dayax-gacmeedka iyo wareegyada xakamaynta matoorada diyaaradaha, oo awood u leh inay u adkaystaan heerkulka xad-dhaafka ah iyo shucaaca.

Samaynta wax ku oolka ah, SiC-ga monocrystalline ee 6-inji ah ee ku jira substrate-ka isku-dhafka ah ee SiC ee polycrystalline wuxuu si buuxda ula jaan qaadayaa hababka qalabka SiC ee caadiga ah (tusaale ahaan, lithography, etching), oo aan u baahnayn maalgashi raasumaal oo dheeraad ah.

Adeegyada XKH

XKH waxay bixisaa taageero dhammaystiran oo loogu talagalay 6-inji monocrystalline SiC oo ku jirta substrate-ka isku-dhafka ah ee polycrystalline SiC, oo daboolaya R&D ilaa wax soo saarka ballaaran:

1. Habayn: Dhumucda lakabka monocrystalline ee la hagaajin karo (5–100 μm), fiirsashada daawada (1e15–1e19 cm⁻³), iyo jihada kiristaalka (4H/6H-SiC) si loo daboolo shuruudaha qalabka kala duwan.

2. Habaynta Wafer-ka: Sahay badan oo ah substrate 6-inji ah oo leh adeegyo khafiifinta dhabarka iyo biraha lagu sameeyo si loogu daro isku-dhafka qalabka.

3. Xaqiijinta Farsamada: Waxaa ku jira falanqaynta kiristaalka XRD, tijaabinta saameynta hoolka, iyo cabbirka iska caabbinta kulaylka si loo dedejiyo u-qalmitaanka agabka.

4. Samaynta Soo-saaridda Degdegga ah: Muunadaha 2- ilaa 4-inji ah (hab isku mid ah) si hay'adaha cilmi-baarista ay u dardargeliyaan wareegyada horumarinta.

5. Falanqaynta Guul-darrada & Hagaajinta: Xalalka heerka agabka ee loogu talagalay caqabadaha habaynta (tusaale ahaan, cilladaha lakabka epitaxial).

Hadafkayagu waa inaan dhisno SiC monocrystalline ah oo 6-inji ah oo ku shaqeeya substrate-ka isku-dhafka ah ee SiC oo ah xalka waxqabadka kharashka ee la doorbido ee elektaroonigga awoodda SiC, iyadoo bixinaysa taageero dhammaad ilaa dhammaad laga bilaabo tijaabinta ilaa wax soo saarka mugga.

Gunaanad

Qalabka 6-inji ah ee monocrystalline SiC ee ku jira substrate-ka isku-dhafka ah ee SiC wuxuu gaaraa dheelitir horumar ah oo u dhexeeya waxqabadka iyo kharashka iyada oo loo marayo qaab-dhismeedkiisa cusub ee isku-dhafka ah ee mono/polycrystalline. Maadaama gawaarida korontada ay sii kordhayaan oo Warshadaha 4.0 ay horumaraan, substrate-kani wuxuu bixiyaa aasaas agab lagu kalsoonaan karo oo loogu talagalay elektaroonigga korontada ee jiilka soo socda. XKH waxay soo dhaweyneysaa iskaashiga si loo sii sahamiyo kartida tignoolajiyada SiC.