4inch Semi-cayda SiC wafers HPSI SiC substrate Prime Production

4inch Semi-aflagaadada SiC wafers HPSI SiC substrate Prime Production darajada Sawirka

Sharaxaad Gaaban:

4-inji nadiif ah oo nadiif ah oo silikoon carbide ah oo laba-geesood ah oo nadiifin ah ayaa inta badan loo adeegsadaa isgaarsiinta 5G iyo qaybaha kale, iyada oo faa'iidooyinka lagu hagaajinayo tirada soo noqnoqda raadiyaha, aqoonsiga masaafada ultra-dheer, faragelinta ka hortagga, xawaaraha sare. , gudbinta macluumaadka awoodda-weyn iyo codsiyada kale, waxaana loo arkaa inay tahay substrate-ka ugu fiican ee samaynta aaladaha tamarta microwave-ka.

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Faahfaahinta Alaabta

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Tilmaamaha Alaabta

Silicon carbide (SiC) waa walxo isku dhafan oo ka kooban kaarboon iyo silikoon, waana mid ka mid ah qalabka ugu habboon ee samaynta heerkul sare, soo noqnoqoshada sare, awood sare iyo aaladaha korantada sare. Marka la barbardhigo walxaha silikoon ee dhaqameed (Si), ballaca band ee mamnuuca ah ee silikoon carbide waa saddex jeer oo silikon ah; conductivity kaamerada waa 4-5 jeer ka silikoon; danab burburka waa 8-10 jeer ka silikoon; iyo heerka qulqulka saturation elektarooniga ah waa 2-3 jeer ka silikoon, kaas oo buuxinaya baahida warshadaha casriga ah ee tamarta sare, voltage, iyo soo noqnoqoshada sare, iyo inta badan waxaa loo isticmaalaa in lagu sameeyo xawaare sare, sare- inta jeer, tamarta sare iyo qaybaha elektarooniga ah ee iftiiminaya, iyo meelaha hoos codsiga waxaa ka mid ah grid smart, Gawaarida tamarta cusub, tamarta dabaysha photovoltaic, isgaarsiinta 5G, iwm goobta qalabka korontada, silicon carbide diodes iyo MOSFETs ayaa bilaabay inay noqdaan. ganacsi ahaan loo adeegsaday.

Faa'iidooyinka SiC wafers/SiC substrate

Iska caabbinta heerkulka sare. Baaxadda band ee mamnuuca ah ee silikoon carbide waa 2-3 jeer ka silikoon, sidaa darteed electrons aad bay ugu yar tahay inay ku boodaan heerkulka sare waxayna u adkeysan karaan heerkulka hawlgalka sare, iyo kulaylka kuleylka ee carbide silicon waa 4-5 jeer ka silikoon, samaynta way fududahay in laga saaro kulaylka aaladda oo u oggolaanaysa heerkul sare oo xaddidaya. Tilmaamaha heerkulka sare ayaa si weyn u kordhin kara cufnaanta awoodda, iyada oo la yareynayo shuruudaha nidaamka kuleylka kuleylka, taas oo ka dhigaysa terminal mid fudud oo yar.

Iska caabbinta danab sare. Silicon carbide's power field burburkiisu waa 10 jeer ka silikoon, taas oo u sahlaysa in ay u adkeysato danab sare, taas oo ka dhigaysa mid ku haboon aaladaha tamarta sare leh.

Iska caabin-sare-sare. Silicon carbide waxay leedahay laba jeer heerka qulqulka elektaroonigga ah ee silikoon, taasoo keentay in aaladaha ku jira habka xidhitaanka aysan ka jirin ifafaalaha jiidashada hadda, waxay si wax ku ool ah u wanaajin kartaa inta jeer ee beddelka aaladda, si loo gaaro miniaturisation aaladda.

Luminta tamarta hoose. Silicon carbide waxay leedahay iska caabin aad u hooseeya marka loo eego maaddooyinka silikoon, luminta xakamaynta hoose; Isla mar ahaantaana, xajmiga sare ee silikoon carbide wuxuu si weyn u yareynayaa qulqulka hadda, khasaaraha awoodda; Intaa waxaa dheer, qalabka silikoon carbide ee habka xidhitaanka kuma jiraan ifafaale jiidashada hadda, luminta beddelka hooseeya.