4 inji ah oo ah wafer SiC nus-cay ah oo HPSI SiC substrate ah oo heer wax soo saar Prime ah

4 inji ah oo ah wafer SiC nus-cay ah oo HPSI SiC substrate ah oo heer sare ah oo wax soo saar ah Sawirka la soo bandhigay

Sharaxaad Gaaban:

Saxanka laba-geesoodka ah ee silicon carbide-ka ah ee saafiga sare leh ee semi-insulated silicon carbide waxaa inta badan loo isticmaalaa isgaarsiinta 5G iyo meelaha kale, iyadoo faa'iidooyinka ay ka mid yihiin hagaajinta heerka soo noqnoqoshada raadiyaha, aqoonsiga masaafada aadka u dheer, ka hortagga faragelinta, gudbinta macluumaadka xawaaraha sare, awoodda weyn iyo codsiyada kale, waxaana loo arkaa inay tahay substrate-ka ugu habboon ee lagu sameeyo aaladaha korontada ku shaqeeya ee microwave-ka.

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Astaamaha

Qeexitaanka Badeecada

Carbohydrate-ka Silicon (SiC) waa walax isku-dhafan oo ka kooban walxaha kaarboon iyo silikoon, waana mid ka mid ah agabka ugu habboon ee lagu sameeyo aaladaha heerkulka sare, soo noqnoqoshada sare, awoodda sare iyo danab sare leh. Marka la barbardhigo walxaha silikoon ee dhaqameed (Si), ballaca xarigga ee la mamnuucay ee carbide-ka silicon waa saddex jibaar ka silicon; habaynta kulaylka waa 4-5 jibaar ka silicon; danab burburku waa 8-10 jibaar ka silicon; heerka qulqulka elektaroonigga ahna waa 2-3 jibaar ka silicon, kaas oo daboolaya baahiyaha warshadaha casriga ah ee awoodda sare, danab sare, iyo soo noqnoqoshada sare leh, waxaana inta badan loo isticmaalaa in lagu sameeyo qaybaha elektaroonigga ah ee xawaaraha sare, soo noqnoqoshada sare, awoodda sare iyo kuwa iftiinka soo saara, meelaha ay ka shaqeeyaanna waxaa ka mid ah shabakad caqli badan, baabuurta tamarta cusub, awoodda dabaysha ee sawir-qaadista, isgaarsiinta 5G, iwm. Dhinaca qalabka korontada, diode-yada carbide-ka silicon iyo MOSFET-yada ayaa bilaabay in si ganacsi ah loo isticmaalo.

Faa'iidooyinka Wafers-ka SiC/SiC substrate-ka

Iska caabinta heerkulka sare. Ballaca xarkaha ee la mamnuucay ee carbide-ka silicon waa 2-3 jeer ka silicon, sidaa darteed elektaroonada uma badna inay ku boodaan heerkul sare waxayna u adkeysan karaan heerkulka sare ee hawlgalka, iyo conductivity kulaylka ee carbide-ka silicon waa 4-5 jeer ka silicon, taasoo sahlaysa in kulaylka laga saaro qalabka oo u oggolaanaysa heerkulka hawlgalka oo xaddidan. Astaamaha heerkulka sare waxay si weyn u kordhin karaan cufnaanta awoodda, iyagoo yareynaya shuruudaha nidaamka kala-baxa kulaylka, taasoo ka dhigaysa terminal-ka mid fudud oo yar.

Iska caabinta danab sare. Xoogga goobta burburka ee kaarboonaydhka silikoonku waa 10 jeer ka badan ka silikoon, taasoo u suurtagelinaysa inay u adkaysato danab sare, taasoo ka dhigaysa mid ku habboon aaladaha danab sare leh.

Iska caabinta soo noqnoqoshada sare. Kaarboohaydraytka Silicon wuxuu leeyahay laba jibaar heerka qulqulka elektarooniga ee buuxnaanta ee silicon, taasoo keentay in qalabkiisa habka xidhitaanka uusan ka jirin ifafaalaha jiidista ee hadda jira, si wax ku ool ah ayuu u hagaajin karaa soo noqnoqoshada beddelka qalabka, si loo gaaro yaraynta qalabka.

Lumista tamarta oo hooseysa. Kaarboohaydraytka silikoonku wuxuu leeyahay iska caabin aad u hooseysa marka loo eego walxaha silikoonka, luminta gudbinta oo hooseysa; isla markaana, baaxadda sare ee kaarboohaydraytka silikoonku waxay si weyn u yareysaa qulqulka daadashada, luminta korontada; Intaa waxaa dheer, aaladaha kaarboohaydraytka silikoon ee ku jira habka xidhitaanka ma jiraan dhacdada jiidista ee hadda jirta, luminta wareejinta oo hooseysa.