4H/6H-P 6inch SiC wafer Heer aan lahayn MPD Heerka Wax-soo-saarka
Nooca 4H/6H-P Substrates SiC Composite Shaxda halbeegga caadiga ah
6 Dhexroor inji ah Substrate Silicon Carbide (SiC) Faahfaahinta
| Fasal | Wax soo saar eber MPD ahDarajada (Z) Darajada) | Waxsoosaarka Caadiga ahDarajada (P) Darajada) | Fasalka Madow (D Darajada) | ||
| Dhexroorka | 145.5 mm ~ 150.0 mm | ||||
| Dhumucda | 350 μm ± 25 μm | ||||
| Jihaynta Wafer-ka | -Offdhidibka: 2.0°-4.0° dhanka [1120] ± 0.5° ee 4H/6H-P, dhidibka saaran: 〈111〉± 0.5° ee 3C-N | ||||
| Cufnaanta Tuubooyinka Yaryar | 0 cm-2 | ||||
| Iska caabin | nooca p-nooca 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| nooca n-nooca 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Jihada Fidsan ee Aasaasiga ah | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Dhererka Fidsan ee Aasaasiga ah | 32.5 mm ± 2.0 mm | ||||
| Dhererka Fidsan ee Labaad | 18.0 mm ± 2.0 mm | ||||
| Jihada Fidsan ee Labaad | Wajiga silikoon kor u jeeda: 90° CW. laga bilaabo Prime flat ± 5.0° | ||||
| Ka-saarista Cidhifka | 3 mm | 6 mm | |||
| LTV/TTV/Qaanso/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Qalafsanaan | Boolish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare | Midna ma jiro | Dhererka wadarta ≤ 10 mm, dherer hal ≤2 mm | |||
| Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤0.1% | |||
| Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Aagga wadajirka ah≤3% | |||
| Kaarboonka Muuqaalka ah | Aagga wadarta ah ≤0.05% | Aagga wadarta ah ≤3% | |||
| Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan | Midna ma jiro | Dhererka wadarta ≤1 × dhexroorka wafer | |||
| Chips-ka Geesaha Sare ee Iftiinka Xoogga leh | Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm | 5 la oggol yahay, ≤1 mm midkiiba | |||
| Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Xoog Sare | Midna ma jiro | ||||
| Baakad | Cajalad badan oo wafer ah ama Weel Wafer Hal ah | ||||
Qoraalo:
※ Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. # Xoqashada waa in lagu hubiyaa wejiga Si o
Wafer SiC nooca 4H/6H-P oo leh darajada Zero MPD iyo wax soo saar ama darajada been abuurka ah ayaa si weyn loogu isticmaalaa codsiyada elektaroonigga ah ee horumarsan. Awooddeeda kulaylka ee aadka u fiican, danab jabitaan oo sarreeya, iyo iska caabbinta jawiyada adag ayaa ka dhigaya mid ku habboon elektaroonigga korontada, sida badhanka danab sare iyo kuwa wax lagu beddelo. Heerka Zero MPD wuxuu hubiyaa cillado yar, oo muhiim u ah aaladaha lagu kalsoonaan karo ee sare. Wafer-ka heerka wax soo saarka waxaa loo isticmaalaa wax soo saarka baaxadda weyn ee aaladaha korontada iyo codsiyada RF, halkaas oo waxqabadka iyo saxnaanta ay muhiim yihiin. Wafer-ka heerka been abuurka ah, dhanka kale, waxaa loo isticmaalaa habaynta habka, tijaabinta qalabka, iyo tijaabinta qaab-dhismeedka, taasoo awood u siinaysa xakamaynta tayada joogtada ah ee jawiga wax soo saarka semiconductor-ka.
Faa'iidooyinka substrates-ka isku-dhafka ah ee N-type SiC waxaa ka mid ah
- Qaboojinta Kulaylka Sare: Wafer-ka 4H/6H-P SiC si hufan ayuu u kala firdhiyaa kulaylka, taasoo ka dhigaysa mid ku habboon codsiyada elektaroonigga ah ee heerkulka sare iyo awoodda sare leh.
- Danab Jaban oo SareAwooddeeda ay ku maareyso danabyada sare iyada oo aan cillad lahayn waxay ka dhigaysaa mid ku habboon qalabka elektaroonigga korontada iyo codsiyada beddelka danabyada sare.
- Heerka Eber MPD (Cillad Tuubo Yaryar)Cufnaanta cilladaha ugu yar waxay hubisaa isku hallayn iyo waxqabad sare, taasoo muhiim u ah aaladaha elektaroonigga ah ee baahida badan leh.
- Heerka Wax-soo-saarka ee Wax-soo-saarka Culus: Ku habboon soo saarista baaxadda weyn ee aaladaha semiconductor-ka ee waxqabadka sare leh oo leh heerar tayo adag leh.
- Darajada Qallafsan ee Imtixaanka iyo Kala-hagaajinta: Waxay awood u siineysaa hagaajinta habka, tijaabinta qalabka, iyo sameynta qaab-dhismeedka iyada oo aan la isticmaalin wafers heer sare ah oo wax soo saar ah.
Guud ahaan, buskudka SiC ee 4H/6H-P ee 6-inji ah oo leh heerka Zero MPD, heerka wax soo saarka, iyo heerka buskudka ayaa bixiya faa'iidooyin muhiim ah oo ku saabsan horumarinta aaladaha elektaroonigga ah ee waxqabadka sare leh. Buskudkani waxay si gaar ah faa'iido ugu leeyihiin codsiyada u baahan hawlgalka heerkulka sare, cufnaanta awoodda sare, iyo beddelka awoodda hufan. Heerka Zero MPD wuxuu hubiyaa cillado yar oo loogu talagalay waxqabadka qalabka la isku halleyn karo oo xasilloon, halka buskudka heerka wax soo saarka ay taageeraan wax soo saarka baaxadda weyn iyadoo la adeegsanayo kontaroolo tayo adag leh. Buskudka heerka buskudka ah waxay bixiyaan xal kharash-ool ah oo loogu talagalay hagaajinta habka iyo hagaajinta qalabka, taasoo ka dhigaysa kuwo aan lagama maarmaan u ah soo saarista semiconductor-ka saxda ah ee sare.
Jaantus Faahfaahsan
