4H/6H-P 6inch SiC wafer Zero shahaado MPD Wax soo saar

Sharaxaad Gaaban:

Nooca 4H/6H-P nooca 6-inch ee SiC wafer waa wax semiconductor ah oo loo isticmaalo soo saarista aaladaha elegtarooniga ah, ee loo yaqaano kulaylka wanaagsan ee ay u leedahay, danab burburka sareeya, iyo iska caabinta heerkulka sare iyo daxalka. Heerka wax-soo-saarka iyo Eber MPD (Dhibaatooyinka Pipe Micro) waxay xaqiijiyaan isku halaynta iyo xasilloonida qalabka elektiroonigga ah ee waxqabadka sarreeya. Waferrada heerka-soo-saarka ah ayaa loo adeegsadaa soo saarista aalado baaxad leh oo leh koontarool tayo adag leh, halka maraqyada heerka-dulmiga ah marka hore loo isticmaalo habsocodka wax-ka-saaridda iyo tijaabinta qalabka. Astaamaha aadka u wanaagsan ee SiC waxay ka dhigaan mid si ballaaran loogu dabaqo heerkulka sare, korantada sare, iyo aaladaha elegtarooniga ah ee soo noqnoqda, sida aaladaha korantada iyo aaladaha RF.

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4H/6H-P Nooca SiC Substrates Composite Substrates Miis cabbirka guud

6 Dhexroor inch Silicon Carbide (SiC) Substrate Tilmaamid

Darajo			Wax soo saarka MPD eberDarajada (Z Darajo)	Wax soo saarka caadiga ahDarajada (P Darajo)	Dummy Fasalka (D Darajo)
Dhexroorka			145.5 mm ~ 150.0 mm
Dhumucda			350 μm ± 25 μm
Hanuuninta Wafer			-Offdhidibka: 2.0°-4.0° dhanka [1120] ± 0.5° ee 4H/6H-P, On dhidibka:〈111〉± 0.5° ee 3C-N
Cufnaanta Dheef-yar			0 cm-2
iska caabin	p-nooca 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nooca 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Hanuuninta Flat Primary		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Dhererka Guriga aasaasiga ah			32.5 mm ± 2.0 mm
Dhererka Guriga Sare			18.0 mm ± 2.0 mm
Hanuuninta Guriga Sare			Silicon weji kor ah: 90° CW. Laga soo bilaabo dabaqa Prime ± 5.0°
Ka saarida gees			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare			Midna		Dhererka isugeynta ≤ 10 mm, hal dherer≤2 mm
Taarikada Hex By Iftiin Xoogan Sare			Aagga wadarta ≤0.05%		Aagga isugeynta ≤0.1%
Meelo Badan Oo Iftiin Xoogan Sare leh			Midna		Aagga isugeynta≤3%
Kaarboon Muuqaal ah			Aagga wadarta ≤0.05%		Aagga isugeynta ≤3%
Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare			Midna		Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifka Sare ee Iftiinka Xooga			Midna lama oggola ≥0.2mm ballac iyo qoto dheer		5 waa la ogol yahay, ≤1 mm midkiiba
Wasakhaynta Silikoonka Dusha Sare ee Xooggiisa			Midna
Baakadaha			Cassette Multi-wafer ah ama Konteenar Wafer Keliya ah

Xusuusin:

※ Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. # xagashada waa in lagu fiiriyaa si wejiga o

Nooca 4H/6H-P ee 6-inji waferka SiC oo leh shahaado Zero MPD iyo wax soo saar ama darajo caag ah ayaa si weyn loogu isticmaalaa codsiyada elektiroonigga ah ee horumarsan. Kuleylkeeda heerkuleed ee heer sare ah, koronto burbursan oo sarreeya, iyo iska caabbinta bay'ada adag ayaa ka dhigaysa mid ku habboon korontada elektiroonigga ah, sida furayaasha korantada sare iyo rogayaasha. Heerka Zero MPD wuxuu xaqiijiyaa cilladaha ugu yar, oo muhiim u ah aaladaha lagu kalsoonaan karo. Waferrada heerka-soo-saarka ayaa loo adeegsadaa wax-soo-saarka baaxadda weyn ee aaladaha korantada iyo codsiyada RF, halkaasoo waxqabadka iyo saxnaanta ay muhiim u yihiin. Wafers-fasalka Dummy, dhanka kale, waxaa loo isticmaalaa habaynta habraaca, tijaabinta qalabka, iyo wax-soo-saarka, taas oo awood u siinaysa kontoroolka tayada joogtada ah ee jawiyada wax soo saarka semiconductor.

Faa'iidooyinka N-nooca SiC-hoosaadka isku-dhafka ah waxaa ka mid ah

Dhaqdhaqaaqa Kuleylka Sare: Waferka 4H / 6H-P SiC wuxuu si hufan u daadiyaa kulaylka, taas oo ka dhigaysa mid ku habboon heerkulka sare iyo codsiyada elektarooniga ah.
Korontada Burburka Sare: Awoodda ay u leedahay in ay xakamayso tamarta sare iyada oo aan guul darraysnayn ayaa ka dhigaysa mid ku habboon qalabka elektiroonigga ah iyo codsiyada beddelka tamarta sare.
Eber MPD (cilad-xumada tuubada yar) darajadaCufnaanta cilladda ugu yar waxay hubisaa isku halaynta sare iyo waxqabadka, oo muhiim u ah dalabka aaladaha elektiroonigga ah.
Wax-soo-saarka-Darajada Wax-soo-saarka Mass: Ku habboon wax-soo-saarka baaxadda weyn ee aaladaha semiconductor-ka waxqabadka sare leh oo leh heerar tayo adag.
Dummy-Darajada Imtixaanka iyo Xisaabinta: Waxay sahlaysa habaynta habsocodka, tijaabinta qalabka, iyo prototyping iyada oo aan la isticmaalin wax-soo-saarka qiimaha sarreeya.

Guud ahaan, 4H/6H-P 6-inji wafers SiC oo leh shahaado Zero MPD, heerka wax soo saarka, iyo buundada cakiran ayaa bixiya faa'iidooyin la taaban karo oo loogu talagalay horumarinta qalabka elektiroonigga ah ee waxqabadka sarreeya. Waferradan ayaa si gaar ah faa'iido u leh codsiyada u baahan hawlgal heerkul sare ah, cufnaanta awoodda sare, iyo beddelka tamarta hufan. Darajada Zero MPD waxay hubisaa cilladaha ugu yar ee waxqabadka aaladaha la isku halayn karo oo deggan, halka waferrada heerka-soo-saarka ahi ay taageeraan wax soo saar ballaaran oo leh kontaroolo tayo adag leh. Wafers-fasalka-Dummy-gu waxay bixiyaan xal-wax-ku-ool ah oo loogu talagalay hagaajinta habka iyo hagaajinta qalabka, taasoo ka dhigaysa inay lagama maarmaan u tahay samaynta saxan-sare ee semiconductor.