4H-N/6H-N SiC Wafer Reasearch wax soo saarka heerka dummy Dia150mm Silicon carbide substrate

Sharaxaad Gaaban:

Waxaan bixin karnaa substrate filim khafiif ah oo heerkul sare leh oo superconducting ah, filimaan khafiif ah oo birlab ah iyo substrate filim khafiif ah oo ferroelectric ah, kiristaal semiconductor ah, kiristaal indhaha ah, agab kiristaal laysar ah, isla markaana bixiya jiheyn, jarista kiristaal, shiidi, nadiifin iyo adeegyo kale oo farsamayn ah. Substrates-keena SiC waxay ka yimaadaan Warshadda Tankeblue ee Shiinaha.


Astaamaha

Qeexitaanka substrate-ka silicon carbide (SiC) dhexroorka 6 inji

Fasal

Eber MPD

Soo saarista

Darajada Cilmi-baarista

Fasalka Madow

Dhexroorka

150.0mm±0.25mm

Dhumucda

4H-N

350um±25um

4H-SI

500um±25um

Jihaynta Wafer-ka

Dhidibka: <0001>±0.5° ee 4H-SI
Dhidibka ka baxsan: 4.0° dhanka <1120>±0.5° ee 4H-N

Aqal Hoose

{10-10}±5.0°

Dhererka Fidsan ee Aasaasiga ah

47.5mm ± 2.5mm

Ka saarista geeska

3mm

TTV/Qaanso/Warp

≤15um/≤40um/≤60um

Cufnaanta Tuubooyinka Yaryar

≤1cm-2

≤5cm-2

≤15cm-2

≤50cm-2

Iska caabinta 4H-N 4H-SI

0.015 ~0.028Ω!cm

≥1E5Ω!cm

Qalafsanaan

Boolish Ra ≤1nm CMP Ra≤0.5nm

#Dillaacyo ay sameeyeen iftiin xooggan

Midna ma jiro

1 la oggol yahay, ≤2mm

Dhererka wadarta ≤10mm, dherer hal ah ≤2mm

*Taarikada Hex iyadoo la adeegsanayo iftiin xooggan oo sare

Aagga wadarta ah ≤1%

Aagga wadarta ≤ 2%

Aagga wadarta ≤ 5%

* Meelaha polytype-ka ah iyadoo la adeegsanayo iftiin xooggan

Midna ma jiro

Aagga wadarta ≤ 2%

Aagga wadarta ≤ 5%

*&Xumaan iyadoo la adeegsanayo iftiin xooggan

3 xoqid ilaa 1 x dhexroorka wafer dhererka wadarta ah

5 xoqid ilaa 1 x dhexroorka wafer dhererka wadarta ah

5 xoqan ilaa 1 x dhexroorka wafer dhererka wadarta ah

Jabka geeska

Midna ma jiro

3 la oggol yahay, ≤0.5mm midkiiba

5 la oggol yahay, ≤1mm midkiiba

Wasakheynta iftiinka xoogga badan

Midna ma jiro

Iibka & Adeegga Macaamiisha

Iibsashada Agabka

Waaxda iibsiga agabka ayaa mas'uul ka ah inay ururiso dhammaan agabka ceeriin ee loo baahan yahay si loo soo saaro badeecadaada. Raad-raac dhammaystiran oo dhammaan agabka iyo agabka, oo ay ku jiraan falanqaynta kiimikada iyo jireed, ayaa had iyo jeer diyaar ah.

Tayada

Inta lagu jiro iyo ka dib soo saarista ama farsamaynta alaabtaada, waaxda xakamaynta tayada ayaa ku lug leh hubinta in dhammaan agabka iyo dulqaadku ay buuxiyaan ama ka badan yihiin shuruudahaaga.

Adeegga

Waxaan ku faannaa inaan haysanno shaqaale injineerinka iibka ah oo khibrad ka badan 5 sano u leh warshadaha semiconductor-ka. Waxaa loo tababaray inay ka jawaabaan su'aalaha farsamada iyo sidoo kale inay bixiyaan qiimeyn waqtigeeda ku habboon baahiyahaaga.

Waxaan kula garab taaganahay wakhti kasta oo aad dhibaato la kulanto, waxaanan ku xallin doonnaa 10 saacadood gudahood.

Jaantus Faahfaahsan

Substrate-ka silikoon-kaarboonaytka (1)
Substrate-ka silikoon-kaarboonaytka (2)

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