4H-N 8 inji oo ah wafer substrate ah oo SiC ah oo Silicon Carbide ah oo dhumucdiisu tahay 500um

4H-N 8 inji SiC wafer substrate ah Silicon Carbide Dummy heerka cilmi-baarista dhumucdiisuna tahay 500um Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Wafers-ka silikoon carbide waxaa loo isticmaalaa aaladaha elektarooniga ah sida diode-yada awoodda leh, MOSFET-yada, aaladaha microwave-ka awoodda sare leh, iyo transistors-ka RF, taasoo suurtogalinaysa beddel tamar oo hufan iyo maaraynta awoodda. Wafers-ka SiC iyo substrates-ka ayaa sidoo kale loo isticmaalaa qalabka elektarooniga baabuurta, nidaamyada hawada sare, iyo teknoolojiyada tamarta la cusboonaysiin karo.

Noo soo dir emayl

Astaamaha

Sideed u Doorataa Wafers-ka Silicon Carbide iyo Substrates-ka SiC?

Marka aad dooranayso wafers-ka iyo substrate-ka silicon carbide (SiC), waxaa jira dhowr arrimood oo ay tahay in la tixgeliyo. Waa kuwan qaar ka mid ah shuruudaha muhiimka ah:

Nooca Agabka: Go'aami nooca agabka SiC ee ku habboon codsigaaga, sida 4H-SiC ama 6H-SiC. Qaab-dhismeedka kiristaalka ee ugu badan ee la isticmaalo waa 4H-SiC.

Nooca Daweynta: Go'aanso inaad u baahan tahay substrate SiC ah oo la daweeyay ama aan la daweeyay. Noocyada dawooyinka ee caadiga ah waa nooca N-type (n-doped) ama nooca P-type (p-doped), iyadoo ku xiran shuruudahaaga gaarka ah.

Tayada Kiristariga: Qiimee tayada kiristaalka ee buskudka SiC ama substrates-ka. Tayada la rabo waxaa lagu go'aamiyaa xuduudaha sida tirada cilladaha, jihada kiristaalka, iyo qallafsanaanta dusha sare.

Dhexroorka Wafer: Dooro cabbirka waferka ku habboon iyadoo lagu saleynayo codsigaaga. Cabbirrada caadiga ah waxaa ka mid ah 2 inji, 3 inji, 4 inji, iyo 6 inji. Inta dhexroorka weyn yahay, ayaa wax soo saar badan aad ka heli kartaa wafer kasta.

Dhumucda: Ka fiirso dhumucda la rabo ee wafers-ka SiC ama substrate-ka. Xulashooyinka dhumucda caadiga ah waxay u dhexeeyaan dhowr micrometers ilaa dhowr boqol oo micrometers.

Jihada: Go'aami jihada kristantarada ee la jaanqaadaysa shuruudaha codsigaaga. Jihada caadiga ah waxaa ka mid ah (0001) ee 4H-SiC iyo (0001) ama (0001̅) ee 6H-SiC.

Dhammaadka Dusha Sare: Qiimee dhammaadka dusha sare ee buskudka ama substrate-ka SiC. Dusha sare waa inay noqotaa mid siman, la safeeyey, oo aan lahayn xoqitaan ama wasakh.

Sumcadda Alaab-qeybiyaha: Dooro alaab-qeybiye sumcad leh oo khibrad ballaaran u leh soo saarista buskudka SiC ee tayada sare leh iyo substrates-ka. Ka fiirso arrimaha sida awoodaha wax soo saarka, xakamaynta tayada, iyo dib u eegista macaamiisha.

Qiimaha: Ka fiirso saameynta kharashka, oo ay ku jiraan qiimaha halkii wafer ama substrate iyo wixii kharash dheeraad ah ee habaynta ah.

Waa muhiim inaad si taxaddar leh u qiimeyso arrimahan oo aad la tashato khubarada warshadaha ama alaab-qeybiyeyaasha si loo hubiyo in wafer-yada iyo substrates-ka SiC ee la doortay ay buuxiyaan shuruudahaaga gaarka ah ee codsiga.