Wafers SiC ah oo 4 inji ah 6H Semi-insulating SiC Substrates, cilmi baaris, iyo heer been abuur ah

4 inji ah Wafers SiC ah 6H Semi-insulating SiC Substrates, cilmi baaris, iyo heer been abuur ah Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Substrate-ka carbide-ka silicon ee nus-insulated-ka ah waxaa lagu sameeyaa jarista, shiididda, nadiifinta iyo tiknoolajiyada kale ee farsamaynta ka dib koritaanka kiristaalka carbide-ka silicon ee nus-insulated-ka ah. Lakab ama lakab kiristaal badan ayaa lagu beeraa substrate-ka buuxiya shuruudaha tayada sida epitaxy, ka dibna qalabka microwave RF waxaa lagu sameeyaa iyadoo la isku darayo naqshadaynta wareegga iyo baakadaha. Waxaa laga heli karaa substrate-ka keligood ah ee silicon carbide-ka semi-insulated-ka ah ee 2inji, 3inji, 4inji, 6inji, 8 inji, iyo heerka tijaabada ee semi-insulated silicon carbide.

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Qeexitaanka Badeecada

Fasal			Heerka Wax-soo-saarka ee Eber MPD (Darajada Z)			Heerka Wax Soo Saarka Caadiga ah (Darajada P)		Darajada Madow (D Darajada)
Dhexroorka			99.5 mm ~ 100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Jihaynta Wafer-ka			Dhidibka ka baxsan: 4.0° dhanka < 1120 > ±0.5° ee 4H-N, Dhidibka saaran: <0001>±0.5° ee 4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Jihada Fidsan ee Aasaasiga ah		{10-10} ±5.0°
Dhererka Fidsan ee Aasaasiga ah		32.5 mm±2.0 mm
Dhererka Fidsan ee Labaad		18.0 mm±2.0 mm
Jihada Fidsan ee Labaad		Wajiga silikoon kor u jeeda: 90° CW. laga bilaabo Prime flat ±5.0°
Ka-saarista Cidhifka		3 mm
LTV/TTV/Qaanso/Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Qalafsanaan			Wajiga C				Boolish ah		Ra≤1 nm
			Wejiga Si	CMP	Ra≤0.2 nm					Ra≤0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare		Midna ma jiro						Dhererka wadarta ≤ 10 mm, hal dhererka ≤2 mm
Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan		Aagga wadarta ah ≤0.05%						Aagga wadarta ah ≤0.1%
Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro						Aagga wadajirka ah≤3%
Kaarboonka Muuqaalka ah		Aagga wadarta ah ≤0.05%						Aagga wadarta ah ≤3%
Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro						Dhererka wadarta ≤1＊dhexroorka wafer
Chips-ka Geesaha Sare ee Iftiinka Xoogga leh		Lama oggola ≥0.2 mm ballac iyo qoto dheer						5 la oggol yahay, ≤1 mm midkiiba
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Xoog Sare		Midna ma jiro
Baakad		Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah