3inj 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-aflagaado SiC

3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Wafers SiC ah oo aflagaado ah Sawirka

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SiC wafer (Silicon Carbide) oo tayo sare leh ilaa warshadaha elektiroonigga ah iyo indhaha. 3inch SiC wafer waa qalab semiconductor jiilka xiga, wafers silikoon-carbide-ka-dahaaran oo badh ah dhexroor 3-inji ah. Wafers-yada waxaa loogu talagalay samaynta awoodda, RF iyo aaladaha optoelectronics.

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3-inch 4H Semi-insulated SiC (silicon carbide) maraqyada substrate-ka ah waa walxo semiconductor caadi ahaan la isticmaalo. 4H waxay muujinaysaa qaabdhismeedka crystal tetrahexahedral. Semi-dahaadhka macneheedu waxa weeye in substrate-ku leeyahay sifooyin iska caabin ah oo aad u sarreeya oo laga yaabo in laga sooco socodka hadda.

Mashiinnada substrate-ka ah ee noocan oo kale ah waxay leeyihiin sifooyinka soo socda: heerkulka sare ee kuleylka, luminta xakamaynta hooseeya, caabbinta heerkulka sare ee heer sare ah, iyo xasiloonida farsamada iyo kiimikada aad u fiican. Sababtoo ah carbide silikoon waxay leedahay farqi tamareed oo ballaaran waxayna u adkeysan kartaa heerkulka sare iyo xaaladaha goobta korantada sare, 4H-SiC wafers-dahaaran oo si weyn loo isticmaalo qalabka elektiroonigga ah iyo aaladaha soo noqnoqda raadiyaha (RF).

Codsiyada ugu muhiimsan ee 4H-SiC wafers-dahaaran badheed waxaa ka mid ah:

1--Power Electronics: 4H-SiC wafers waxaa loo isticmaali karaa in lagu soo saaro qalabka lagu badalo awooda sida MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) iyo Schottky diodes. Qalabyadani waxay leeyihiin hoos-u-dhac ku-meel-gaar ah iyo beddelidda khasaaraha tamarta sare iyo heerkulka sare waxayna bixiyaan hufnaan sare iyo isku hallayn.

2--Radio Frequency (RF) Aaladaha: 4H-SiC wafers semi-dahaaran ayaa loo isticmaali karaa in lagu abuuro awood sare, amplifiers sare ee RF, resistors chip, filtarrada, iyo aaladaha kale. Silicon carbide waxa ay leedahay wax qabad soo noqnoqda oo ka wanaagsan iyo xasilloonida kulaylka iyada oo ay ugu wacan tahay heerkeeda qulqulka qulqulka korantada ee elektaroonigga ah iyo kuleylka kuleylka sarreeya.

3--Aaladaha Optoelectronic: 4H-SiC wafers semi-insulated waxaa loo isticmaali karaa in lagu soo saaro qalabka laser-ka ee awoodda sare leh, qalabka iftiinka UV iyo wareegyada isku dhafan ee optoelectronic.

Marka la eego jihada suuqa, baahida loo qabo 4H-SiC wafers-dahaaran-dahaaran ayaa sii kordheysa iyadoo ay sii kordhayaan dhinacyada korantada ee korantada, RF iyo optoelectronics. Tani waxay sabab u tahay xaqiiqda ah in silikoon carbide uu leeyahay codsiyo badan oo kala duwan, oo ay ku jiraan waxtarka tamarta, gawaarida korontada, tamarta dib loo cusboonaysiin karo iyo isgaarsiinta. Mustaqbalka, suuqa 4H-SiC wafers-dahaaran semi-dahaaran ayaa weli ah mid rajo leh waxaana la filayaa in lagu beddelo qalabka silikon caadiga ah ee codsiyada kala duwan.