3 inji Nadiifnimo Sare (Lama isticmaalin) Wafers Silicon Carbide Substrates nus-insulating Sic Substrates (HPSl)

3 inji Nadiif Sare (Lama isticmaalin) Wafers Silicon Carbide Substrates nus-insulating Sic Substrates (HPSl) Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Wafer-ka Silicon Carbide (SiC) ee 3-inji ah ee High Purity Semi-Insulating (HPSI) waa substrate heer sare ah oo loogu talagalay codsiyada awoodda sare, soo noqnoqoshada sare, iyo optoelectronic. Iyadoo lagu sameeyay walxo aan lahayn nadiifnimo sare oo 4H-SiC ah, wafer-yadani waxay muujiyaan gudbin kuleyl oo heer sare ah, go' ballaaran, iyo sifooyin nus-insulating ah oo gaar ah, taasoo ka dhigaysa kuwo aan lagama maarmaan u ah horumarinta qalabka horumarsan. Iyada oo leh hufnaan qaab-dhismeed oo heer sare ah iyo tayada dusha sare, substrates-ka HPSI SiC waxay u adeegaan aasaaska teknoolojiyada jiilka soo socda ee warshadaha elektaroonigga korontada, isgaarsiinta, iyo hawada, iyagoo taageeraya hal-abuurka qaybaha kala duwan.

Noo soo dir emayl

Astaamaha

Guryaha

1. Sifooyinka Jireed iyo Qaab-dhismeedka
● Nooca Qalabka: Nadiifin Sare (Lama isticmaalin) Silicon Carbide (SiC)
● Dhexroorka: 3 inji (76.2 mm)
●Dhumucda: 0.33-0.5 mm, oo la beddeli karo iyadoo lagu saleynayo shuruudaha codsiga.
● Qaab-dhismeedka Kiristaalka: Nooc polytype ah oo 4H-SiC ah oo leh shabag lix-geesood ah, oo loo yaqaan dhaqdhaqaaqa elektarooniga sare iyo xasilloonida kulaylka.
● Jihaynta:
oStandard: [0001] (C-plane), oo ku habboon codsiyo kala duwan.
o Ikhtiyaar: dhidibka ka baxsan (4° ama 8° janjeedh) si kor loogu qaado koritaanka epitaxial ee lakabka qalabka.
● Fidsanaan: Kala duwanaanshaha dhumucda guud (TTV) ● Tayada Dusha sare:
o Lagu dhalaaliyay cufnaanta cilladaha hooseeya (<10/cm² cufnaanta dhuumaha yar). 2. Astaamaha Korontada ● Iska caabin: >109^99 Ω·cm, oo lagu ilaaliyo ka saarista daawada si ula kac ah loo qaato.
● Xoogga Dielectric: Adkeysiga danab sare leh oo leh khasaaro yar oo dielectric ah, oo ku habboon codsiyada awoodda sare leh.
●Qaadashada Kulaylka: 3.5-4.9 W/cm·K, taasoo suurtogalinaysa kala-baxa kulaylka ee wax ku oolka ah ee aaladaha waxqabadka sare leh.

3. Sifooyinka Kuleylka iyo Farsamada
●Ballaca Ballaca: 3.26 eV, oo ah hawlgal taageeraya danab sare, heerkul sare, iyo xaalado shucaac sare.
●Adkaanta: Mohs 9, oo hubinaysa adkeysi ka dhan ah xirashada farsamada inta lagu jiro farsamaynta.
●Isku-darka Ballaarinta Kulaylka: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, taasoo hubinaysa xasilloonida cabbirka marka heerkulku isbeddelo.

Halbeegga	Heerka Wax Soo Saarka	Darajada Cilmi-baarista	Fasalka Madow	Cutubka
Fasal	Heerka Wax Soo Saarka	Darajada Cilmi-baarista	Fasalka Madow
Dhexroorka	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Dhumucda	500 ± 25	500 ± 25	500 ± 25	µm
Jihaynta Wafer-ka	Dhidibka dul saaran: <0001> ± 0.5°	Dhidibka: <0001> ± 2.0°	Dhidibka: <0001> ± 2.0°	shahaado
Cufnaanta Tuubooyinka Yaryar (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Iska caabinta Korontada	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Lama isticmaalin	Lama isticmaalin	Lama isticmaalin
Jihada Fidsan ee Aasaasiga ah	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	shahaado
Dhererka Fidsan ee Aasaasiga ah	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Dhererka Fidsan ee Labaad	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Jihada Fidsan ee Labaad	90° CW laga bilaabo guriga koowaad ± 5.0°	90° CW laga bilaabo guriga koowaad ± 5.0°	90° CW laga bilaabo guriga koowaad ± 5.0°	shahaado
Ka-saarista Cidhifka	3	3	3	mm
LTV/TTV/Qaanso/Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
Qalafsanaanta Dusha sare	Si-wejiga: CMP, C-wejiga: La safeeyey	Si-wejiga: CMP, C-wejiga: La safeeyey	Si-wejiga: CMP, C-wejiga: La safeeyey
Dildilaacyo (Iftiinka Xoogga Badan)	Midna ma jiro	Midna ma jiro	Midna ma jiro
Saxannada Hex (Iftiinka Xoogga Sare leh)	Midna ma jiro	Midna ma jiro	Aagga guud 10%	%
Meelaha Nooca Badan (Iftiinka Xoogga Badan)	Aagga wadarta 5%	Aagga guud 20%	Baaxadda guud 30%	%
Xoqitaan (Iftiinka Xoogga Sare leh)	≤ 5 xoqan, dhererka wadarta ≤ 150	≤ 10 xoqan, dhererka wadarta ≤ 200	≤ 10 xoqan, dhererka wadarta ≤ 200	mm
Jabinta geeska	Midna ≥ 0.5 mm ballac/qoto dheer	2 la oggol yahay ≤ 1 mm ballac/qoto dheer	5 la oggol yahay ≤ 5 mm ballac/qoto dheer	mm
Wasakhowga Dusha Sare	Midna ma jiro	Midna ma jiro	Midna ma jiro

Codsiyada

1. Elektarooniga Korontada
Balaca ballaaran iyo hufnaanta kulaylka sare ee substrate-ka HPSI SiC ayaa ka dhigaya kuwo ku habboon aaladaha korontada ee ku shaqeeya xaaladaha ba'an, sida:
●Aaladaha Danab-sarreeya: Waxaa ku jira MOSFET-yada, IGBT-yada, iyo Schottky Barrier Diodes (SBDs) si loogu beddelo koronto hufan.
● Nidaamyada Tamarta La Cusboonaysiin Karo: Sida kuwa tamarta dhaliya ee qoraxda ku shaqeeya iyo kuwa xakameeya dabaysha.
●Gaadiidka Korontada (EVs): Waxaa loo isticmaalaa inverters-ka, chargers-ka, iyo nidaamyada powertrain-ka si loo hagaajiyo hufnaanta loona yareeyo cabbirka.

2. Codsiyada RF iyo Microwave-ka
Iska caabinta sare iyo khasaaraha dielectric ee hooseeya ee wafers-ka HPSI ayaa lagama maarmaan u ah nidaamyada soo noqnoqda ee raadiyaha (RF) iyo microwave-ka, oo ay ku jiraan:
●Kaabayaasha Isgaarsiinta: Saldhigyada saldhigyada shabakadaha 5G iyo isgaarsiinta dayax-gacmeedka.
●Hawada Sare iyo Difaaca: Nidaamyada radar-ka, anteenooyinka safka hore leh, iyo qaybaha hawo-mareenka.

3. Elektaroonikada Optoelectronics
Hufnaanta iyo farqiga ballaaran ee 4H-SiC waxay suurtogal ka dhigaysaa in loo isticmaalo aaladaha optoelectronic, sida:
●Sawir-qaadayaasha UV: Loogu talagalay la socodka deegaanka iyo baaritaanka caafimaadka.
●Nalalka Iftiinka ee Awoodda Sare leh: Taageeraya nidaamyada nalalka adag.
●Laser Diodes: Loogu talagalay codsiyada warshadaha iyo caafimaadka.

4. Cilmi-baaris iyo Horumarin
Substrates-ka HPSI SiC waxaa si weyn loogu isticmaalaa shaybaarrada cilmi-baarista iyo horumarinta warshadaha si loo sahamiyo sifooyinka agabka casriga ah iyo sameynta qalabka, oo ay ku jiraan:
●Kobaca Lakabka Epitaxial: Daraasado ku saabsan yaraynta cilladaha iyo hagaajinta lakabka.
●Daraasaddaha Dhaqdhaqaaqa Qaadaha: Baaritaanka gaadiidka elektarooniga ah iyo godadka ee walxaha saafiga ah ee aadka u fiican.
● Samaynta qaab-dhismeedka: Horumarka bilowga ah ee aaladaha cusub iyo wareegyada.

Faa'iidooyinka

Tayada Sare:
Nadiifnimo sare iyo cufnaanta cilladaha oo hooseeya waxay bixiyaan goob lagu kalsoonaan karo oo loogu talagalay codsiyada horumarsan.

Xasiloonida Kulaylka:
Sifooyinka kulaylka ee aadka u fiican waxay u oggolaanayaan aaladaha inay si hufan u shaqeeyaan xaaladaha awoodda sare iyo heerkulka.

Iswaafajin Ballaaran:
Jihooyinka la heli karo iyo xulashooyinka dhumucda gaarka ah waxay hubinayaan in la waafajin karo shuruudaha qalabka kala duwan.

Waarta:
Adkaanta gaarka ah iyo xasilloonida qaab-dhismeedka ayaa yareysa xirashada iyo isbeddelka inta lagu jiro habaynta iyo hawlgalka.

Kala duwanaansho:
Ku habboon warshado kala duwan, laga bilaabo tamarta la cusboonaysiin karo ilaa hawada sare iyo isgaarsiinta.

Gunaanad

Wafer-ka Silicon Carbide-ka ee 3-inji ah ee High Purity Semi-Insulating wuxuu matalaa heerka ugu sarreeya ee tiknoolajiyada substrate-ka ee aaladaha awoodda sare leh, kuwa soo noqnoqda sare leh, iyo kuwa optoelectronic-ka. Isku-darka sifooyinka kulaylka, korontada, iyo farsamada ee aadka u fiican waxay hubinayaan waxqabad la isku halleyn karo oo ka jira jawi adag. Laga bilaabo qalabka elektaroonigga korontada iyo nidaamyada RF ilaa qalabka optoelectronic iyo cilmi-baarista iyo horumarinta horumarsan, qalabkan HPSI wuxuu bixiyaa aasaaska hal-abuurka berri.
Wixii macluumaad dheeraad ah ama aad dalbanayso, fadlan nala soo xiriir. Kooxdayada farsamada ayaa diyaar u ah inay bixiyaan hagitaan iyo ikhtiyaarro habayn ah oo loogu talagalay baahiyahaaga.