3 inch Nadiif Sareedo (Lama La'aan) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)

Sharaxaad Gaaban:

3-inch High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) wafer waa substrate-heer sare oo loo habeeyay codsiyada awooda sare, soo noqnoqoshada sare iyo indhaha. Lagu soosaaray agab aan xidhnayn, saafi ah oo 4H-SiC ah, waferradani waxay soo bandhigayaan kuleyl aad u wanaagsan, bandgap ballaaran, iyo sifooyin gaar ah oo nus-daahiye ah, taasoo ka dhigaysa lama huraan horumarinta aaladda horumarsan. Iyada oo leh hufnaan qaabdhismeed sare iyo tayada dusha sare, HPSI SiC substrates waxay u adeegaan sidii aasaaska tignoolajiyada soo socda ee warshadaha korantada, isgaarsiinta, iyo hawada, taageeraya hal-abuurnimada dhinacyada kala duwan.

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Faahfaahinta Alaabta

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Guryaha

1. Qalabka Jirka iyo Dhismaha
●Qalab: Nadiif Sarreeysa (Lama Laaban) Silicon Carbide (SiC)
● Dhexroorka: 3 inji (76.2 mm)
● Dhumucdiisuna: 0.33-0.5 mm, la beddeli karo oo ku salaysan shuruudaha codsiga.
● Qaab dhismeedka crystal: 4H-SiC polytype oo leh shabag lix geesood ah, oo loo yaqaan dhaqdhaqaaqa elektaroonigga sare iyo xasilloonida kulaylka.
●Hanuuninta:
oStandard: [0001] (C-plane), oo ku habboon codsiyo kala duwan.
o Ikhtiyaar ah: dhidibka ka baxsan (4° ama 8° janjeero) ee kor loogu qaadayo koritaanka epitaxial ee lakabyada qalabka.
●Balaash: Isu geynta dhumucda kala duwanaanshaha (TTV) ●Tayada dusha sare:
La qurxiyey cufnaanta cillad-hoose (<10/cm² cufnaanta micropipe). 2. Guryaha Korontada ● Iska caabin:>109^99 Ω·cm, oo lagu ilaaliyo ciribtirka dopants ulakac ah.
●Xoojinta Dielectric: Adkeysiga tamarta sare leh khasaaraha ugu yar ee dielectric, oo ku habboon codsiyada awoodda sare leh.
●Waxqabadka kulaylka: 3.5-4.9 W/cm · K, awood u yeelashada kulaylka wax ku ool ah ee qalabka waxqabadka sare.

3. Guryaha kulaylka iyo Makaanikada
●Wide Bandgap: 3.26 eV, hawlgalka taageeraya hoos danab sare, heerkulka sare, iyo xaaladaha shucaaca sare.
● Adag: Mohs miisaanka 9, hubinta adkeysiga ka dhanka ah xirashada makaanikada inta lagu jiro farsamaynta.
●Isku-balaadhinta kulaylka: 4.2×10−6/K4.2 \ times 10^{-6}/\text{K}4.2×10−6/K, hubinta xasiloonida cabbirka hoos yimaada kala duwanaanta heerkulka.

Halbeegga	Heerka Wax-soo-saarka	Darajada Cilmi-baarista	Dummy Fasalka	Unug
Darajo	Heerka Wax-soo-saarka	Darajada Cilmi-baarista	Dummy Fasalka
Dhexroorka	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Dhumucda	500 ± 25	500 ± 25	500 ± 25	µm
Hanuuninta Wafer	dhidibka: <0001> ± 0.5°	dhidibka: <0001> ± 2.0°	dhidibka: <0001> ± 2.0°	shahaado
Cufnaanta Micropipe (MPD)	≤ 1	≤ 5	≤ 10	cm-2^-2-2
Iska caabin koronto	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Ka laabasho	Ka laabasho	Ka laabasho
Hanuuninta Flat Primary	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	shahaado
Dhererka Guriga aasaasiga ah	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Dhererka Guriga Sare	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Hanuuninta Guriga Sare	90° CW dabaqa hoose ± 5.0°	90° CW dabaqa hoose ± 5.0°	90° CW dabaqa hoose ± 5.0°	shahaado
Ka saarida gees	3	3	3	mm
LTV/TTV/Bow/Warp	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ± 40 / 45	µm
Dusha sare ee Roughness	Si-wejiga: CMP, C-wejiga: La sifayn	Si-wejiga: CMP, C-wejiga: La sifayn	Si-wejiga: CMP, C-wejiga: La sifayn
Dildilaaca (Iftiinka xoogga badan)	Midna	Midna	Midna
Hex Plates (Iftiinka Xoogga Sare)	Midna	Midna	Aagga isugeynta 10%	%
Aagaga Noocyo badan (Iftiinka Xoogga Sare)	Aagga isugeynta 5%	Aagga isugeynta 20%	Aagga isugeynta 30%	%
Xaqashada (Iftiinka Xoogga Sare)	≤ 5 xagtin, dhererka isugaynta ≤ 150	≤ 10 xoqid, dhererka isugeynta ≤ 200	≤ 10 xoqid, dhererka isugeynta ≤ 200	mm
Chipping Edge	Midna ≥ 0.5 mm ballac/ qoto dheer	2 la ogol yahay ≤ 1 mm ballac/qoto dheer	5 la ogol yahay ≤ 5 mm ballac/qoto dheer	mm
Wasakhaynta Dusha sare	Midna	Midna	Midna

Codsiyada

1. Korontada Elektarooniga ah
Xajmiga ballaaran iyo kuleylka sare ee HPSI SiC substrates ayaa ka dhigaya kuwa ku habboon aaladaha korantada ee ku shaqeeya xaaladaha daran, sida:
●Aaladaha Voltage Sare: Oo ay ku jiraan MOSFETs, IGBTs, iyo Schottky Barrier Diodes (SBDs) si loogu badalo awood hufan.
●Nidaamka tamarta dib loo cusboonaysiin karo: sida rogrogayaasha qoraxda iyo kontaroolayaasha marawaxadaha dabaysha.
●Gawaadhida Korontada (EVs): Waxaa loo isticmaalaa rogo-rogayaasha, dabaylaha, iyo nidaamyada tareennada korontada si loo hagaajiyo waxtarka loona yareeyo cabbirka.

2. Codsiyada RF iyo Microwave
Iska caabbinta sare iyo lumista tamarta yar ee waferrada HPSI waxay lama huraan u yihiin soo noqnoqoshada raadiyaha (RF) iyo nidaamyada microwave-ka, oo ay ku jiraan:
●Kaabayaasha isgaarsiinta: Saldhigyada shabakadaha 5G iyo isgaarsiinta satalaytka.
● Hawada iyo Difaaca: Nidaamyada radar, anteenooyinka qaabaysan, iyo qaybaha avionics.

3. Optoelectronics
Daah-furnaanta iyo bandheynta ballaaran ee 4H-SiC waxay awood u siineysaa isticmaalkeeda aaladaha optoelectronic, sida:
● Sawir-qaadayaasha UV: La socodka deegaanka iyo ogaanshaha caafimaadka.
● LEDs-Awood sare leh: Taageerida nidaamyada nalalka adag ee gobolka.
●Laser Diodes: Loogu talagalay codsiyada warshadaha iyo caafimaadka.

4. Cilmi-baarista iyo Horumarinta
Substrate-ka HPSI SiC ayaa si weyn loogu isticmaalaa shaybaarada tacliinta iyo warshadaha ee R&D si loo sahamiyo agabka horumarsan iyo samaynta aaladaha, oo ay ku jiraan:
●Kobaca lakabka Epitaxial: Daraasado ku saabsan dhimista cilladaha iyo hagaajinta lakabka.
●Daraasaadka Dhaqdhaqaaqa Qaade: Baaritaanka gaadiidka elektaroonigga ah iyo daloolka ee alaabta nadiifka ah.
●Prototyping: Horumarinta hore ee aaladaha cusub iyo wareegyada.

Faa'iidooyinka

Tayada Sare
Nadiifinta sare iyo cufnaanta cilladda hoose waxay siisaa goob lagu kalsoonaan karo oo loogu talagalay codsiyada horumarsan.

Deganaanshaha kulaylka:
Guryaha kala-baxa kulaylka ee aadka u fiican ayaa u oggolaanaya aaladaha inay si hufan ugu shaqeeyaan xaaladaha heerkulka sare iyo awoodda.

Waafaqid Ballaaran:
Jihaynta la heli karo iyo ikhtiyaarrada dhumucda gaarka ah waxay xaqiijinayaan la qabsiga shuruudaha qalabka kala duwan.

Waarta:
Qalafsanaanta gaarka ah iyo xasilloonida qaabdhismeedku waxay yareeyaan xidhashada iyo qallooca inta lagu jiro habaynta iyo hawlgalka.

Kala duwanaansho:
Ku habboon warshado kala duwan, laga bilaabo tamarta la cusboonaysiin karo ilaa hawada hawada iyo isgaarsiinta.

Gabagabo

3-inji Nadiifinta Sare ee Semi-Insulating Silicon Carbide wafer waxay ka dhigan tahay meesha ugu sarreysa tignoolajiyada substrate ee awooda sare, soo noqnoqoshada sare, iyo aaladaha indhaha. Isku dhafka kuleylka aadka u fiican, korantada, iyo qalabka farsamada waxay hubisaa waxqabadka la isku halayn karo ee jawiga adag. Laga soo bilaabo korantada elektiroonigga ah iyo nidaamyada RF ilaa optoelectronics iyo R&D horumarsan, kuwan HPSI substrates waxay bixiyaan aasaaska hal-abuurka berrito.
Wixii macluumaad dheeraad ah ama si aad u dalbato, fadlan nala soo xiriir. Kooxdayada farsamada ayaa diyaar u ah inay ku siiyaan hagitaan iyo xulashooyin habeyneed oo ku habboon baahiyahaaga.