2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High conductivity kulaylka isticmaalka hoose

2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High kulaylka isticmaalka tamarta hoose

Sharaxaad Gaaban:

Silicon carbide (SiC) waa maaddada nus-conductor faraqa ballaaran oo leh kulaylka wanaagsan iyo xasilloonida kiimikada. Nooca 6H-N wuxuu muujinayaa in qaab-dhismeedkiisu yahay laba-geesoole (6H), iyo "N" waxay tilmaamaysaa inay tahay wax-soo-saarka N-nooca, kaas oo badanaa lagu gaaro doping nitrogen.
Substrate-ka silikoon carbide wuxuu leeyahay sifooyin aad u fiican oo iska caabin ah cadaadiska sare, caabbinta heerkulka sare, waxqabadka soo noqnoqda, iwm. Marka la barbardhigo alaabada silikoon, aaladda ay diyaarisay substrate silikoon waxay yareyn kartaa khasaaraha 80% waxayna yareyn kartaa cabbirka aaladda 90%. Marka la eego baabuurta tamarta cusub, silikoon carbide waxay ka caawin kartaa baabuurta tamarta cusub inay gaaraan miisaan fudud oo ay yareeyaan khasaaraha, iyo kordhinta kala duwanaanshaha wadista; Dhinaca isgaarsiinta 5G, waxaa loo isticmaali karaa soo saarista qalabka la xiriira; Soo saarista tamarta sawir-qaadista waxay hagaajin kartaa waxtarka beddelka; Goobta gaadiidka tareenada waxay isticmaali kartaa heerkulkeeda sare iyo sifooyinka caabbinta cadaadiska sare.

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Kuwa soo socdaa waa sifooyinka 2inch silicon carbide wafer

1. Adag: adkaanta Mohs waxay ku saabsan tahay 9.2.
2. Qaab dhismeedka Crystal: qaab-dhismeedka shabagga laba geesoodka ah.
3. Heerarka kulaylka sare: heerkulka kulaylka ee SiC aad ayuu uga sarreeyaa kan silikoon, kaas oo u sahlaya kala-baxa kulaylka waxtarka leh.
4. Farqiga band ee ballaaran: farqiga band ee SiC wuxuu ku saabsan yahay 3.3eV, oo ku habboon heerkulka sare, soo noqnoqda sare iyo codsiyada awoodda sare.
5. Burburinta goobta korantada iyo dhaqdhaqaaqa elektarooniga: Goob koronto oo burbursan oo sareysa iyo dhaqdhaqaaqa elektarooniga ah, oo ku habboon aaladaha elektiroonigga ah ee tamarta hufan sida MOSFETs iyo IGBTs.
6. Degganaanshaha kiimikaad iyo caabbinta shucaaca: ku habboon bay'adaha qallafsan sida hawada hawada iyo difaaca qaranka. Iska caabin kiimiko oo heer sare ah, aashitada, alkali iyo dareerayaasha kale ee kiimikaad.
7. Xoogga farsamada sare: Awood farsamo oo heer sare ah oo heerkul sare ah iyo jawi cadaadis sare leh.
Waxaa si ballaaran loogu isticmaali karaa awoodda sare, soo noqnoqda sare iyo qalabka elektiroonigga heerkulka sare, sida sawir-qaadayaasha ultraviolet, beddelayaasha sawir-qaadista, gawaarida korantada ee PCUs, iwm.

2inch silicon carbide wafer wuxuu leeyahay codsiyo badan.

1.Awoodda elektarooniga ah: loo isticmaalo in lagu soo saaro awood tayo sare leh MOSFET, IGBT iyo aaladaha kale, oo si weyn loogu isticmaalo beddelka tamarta iyo baabuurta korontada.

Qalabka 2.Rf: Qalabka isgaadhsiinta, SiC waxaa loo isticmaali karaa cod-weyneyaasha-sare ee soo noqnoqda iyo cod-weyneyaasha RF.

3.Photoelectric aaladaha: sida ledh-ku-salaysan SIC, gaar ahaan codsiyada buluugga iyo ultraviolet.

4.Sensors: Sababtoo ah heerkulka sare iyo caabbinta kiimikada, substrates SiC waxaa loo isticmaali karaa in lagu soo saaro dareemeyaasha heerkulka sare iyo codsiyada kale ee dareenka.

5.Military iyo aerospace: sababtoo ah caabbinta heerkulka sare iyo sifooyinka xoogga badan, oo ku habboon isticmaalka jawiga daran.

Meelaha ugu muhiimsan ee codsiga 6H-N nooca 2 "SIC substrate waxaa ka mid ah baabuurta tamarta cusub, gudbinta tamarta sare iyo saldhigyada isbeddelka, alaabta cad, tareenada xawaaraha sare leh, matoorada, inverter photovoltaic, sahayda garaaca wadnaha iyo wixii la mid ah.

XKH waxaa lagu habeyn karaa dhumucyo kala duwan iyadoo loo eegayo shuruudaha macaamiisha. Qallafsanaanta dusha kala duwan iyo daawaynta dhalaalaysa ayaa diyaar ah. Noocyada kala duwan ee doping (sida nitrogen doping) waa la taageeraa. Waqtiga dhalmada caadiga ah waa 2-4 toddobaad, iyadoo ku xiran habaynta. Isticmaal walxaha baakadaha lidka-static iyo xumbo ka-hortagga seismic si aad u hubiso badbaadada substrate-ka. Ikhtiyaarada kala duwan ee dhoofinta ayaa diyaar ah, macaamiishuna waxay hubin karaan heerka saadka wakhtiga dhabta ah iyaga oo u maraya lambarka raadraaca ee la bixiyay. Bixi taageero farsamo iyo adeegyo la-talin si loo hubiyo in macaamiishu ay xallin karaan dhibaatooyinka habka isticmaalka.