12 inch SIC substrate silicon carbide dhexroorka darajada koowaad 300mm cabbir weyn 4H-N Ku habboon daminta kulaylka qalabka sare

12 inch SIC substrate silicon carbide dhexroorka darajada koowaad 300mm cabbir weyn 4H-N Ku habboon daminta kulaylka aaladda sare Sawirka

Sharaxaad Gaaban:

Substrate 12-inch silicon carbide substrate (SiC substrate) waa cabir weyn, wax qabad heersare ah oo wax qabad semiconductor ah oo laga sameeyay hal crystal oo ah silikoon carbide. Silicon carbide (SiC) waa qalab koronto oo aad u fiican oo leh koronto, kulayl iyo qalab farsamo, kaas oo si weyn loogu isticmaalo soo saarista aaladaha elektiroonigga ah ee awooda sare, soo noqnoqda sare iyo jawiga heerkulka sare. Substrate-ka 12-inji (300mm) waa qeexitaanka horumarsan ee hadda jira ee tignoolajiyada silikoon carbide, kaas oo si weyn u wanaajin kara hufnaanta wax soo saarka oo dhimi kara kharashyada.

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Faahfaahinta Alaabta

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Astaamaha alaabta

1. Dhaqdhaqaaqa kuleylka sarreeya: heerkulka kuleylka ee silikoon carbide wuxuu ka badan yahay 3 jeer silikoon, kaas oo ku habboon qalabka awoodda sare ee kuleylka kuleylka.

2. Xoog sare oo burbursan: Awoodda goobta burburku waa 10 jeer silikoon, oo ku habboon codsiyada cadaadiska sare leh.

3.Wide bandgap: Bandgap-ku waa 3.26eV (4H-SiC), oo ku habboon heerkulka sare iyo codsiyada soo noqnoqda.

4. adkaanta sare: adkaanta Mohs waa 9.2, labaad oo kaliya dheeman, caabbinta xirashada aad u fiican iyo xoogga farsamada.

5. Xasilooni kiimikaad: caabbinta daxalka xooggan, waxqabadka xasilloon ee heerkulka sare iyo jawi adag.

6. Cabbirka weyn: 12 inch (300mm) substrate, hagaajinta waxtarka wax soo saarka, hoos u dhig qiimaha cutubka.

Cufnaanta cilladda 7.Low: tignoolajiyada kobaca kristanta oo tayo sare leh si loo hubiyo cufnaanta cilladaha hooseeya iyo joogteynta sare.

Jihada codsiga ugu weyn ee alaabta

1. Korontada elegtarooniga ah:

Mosfets: Waxaa loo isticmaalaa baabuurta korantada, wadayaasha mootooyinka warshadaha iyo korantada.

Diodes: sida Schottky diodes (SBD), oo loo isticmaalo sixid hufan iyo beddelka sahayda korontada.

2. Qalabka Rf:

Cod-weyneeye korantada Rf: waxaa lagu isticmaalaa saldhigyada isgaarsiinta 5G iyo isgaarsiinta satalaytka.

Aaladaha Microwave: Ku habboon radar iyo nidaamyada isgaarsiinta wireless.

3. Baabuurta tamarta cusub:

Nidaamyada wadista korontada: kontaroolayaasha mootada iyo rogayaasha baabuurta korontada.

Ku dallacaadda: Module koronto oo loogu talagalay qalabka dallaca degdegga ah.

4. Codsiyada warshadaha:

Inverter koronto sare: loogu talagalay xakameynta gawaarida warshadaha iyo maareynta tamarta.

Shabakad Wacan: Loogu talagalay gudbinta HVDC iyo koronto beddelayaasha elektiroonigga ah.

5. Hawada sare:

Heerkulka sare ee elektiroonigga ah: ku habboon jawiga heerkulka sare ee qalabka hawada.

6. Goobta cilmi-baarista:

Cilmi-baarista semiconductor-ka ballaaran: horumarinta qalabka iyo qalabka semiconductor cusub.

Substrate-ka 12-inji silikoon carbide substrate waa nooc ka mid ah walxaha semiconductor-ka wax qabad sare leh oo leh sifooyin aad u wanaagsan sida kulaylka sareeyo, xoogga goobta burburka sare iyo farqiga ballaaran. Waxaa si weyn loogu isticmaalaa korantada elektiroonigga ah, aaladaha soo noqnoqda raadiyaha, gawaarida tamarta cusub, xakamaynta warshadaha iyo hawada hawada, waana shay muhiim ah oo kor loogu qaadayo horumarinta jiilka soo socda ee qalabka elektiroonigga ah ee hufan iyo awoodda sare leh.

In kasta oo substrate-yada silikoon carbide ay hadda leeyihiin codsiyo toos ah oo yar oo ku jira aaladaha elektiroonigga ah sida muraayadaha AR, awoodooda maaraynta awoodda hufan iyo elektiroonigga yar-yar waxay taageeri kartaa xalalka sahayda koronta ee fudud, waxqabadka sare leh ee aaladaha AR/VR mustaqbalka. Waqtigan xaadirka ah, horumarinta ugu weyn ee substrate carbide silicon waxay ku urursan tahay beeraha warshadaha sida baabuurta tamarta cusub, kaabayaasha isgaarsiinta iyo qalabaynta warshadaha, waxayna kor u qaadaa warshadaha semiconductor si ay u horumariyaan jihada hufan oo la isku halayn karo.

XKH waxaa ka go'an in ay bixiso 12 "SIC substrates oo leh taageero farsamo oo dhamaystiran, oo ay ku jiraan:

1. wax soo saarka Customized: Sida laga soo xigtay baahida macaamiisha si ay u bixiyaan resistivity kala duwan, hanuunin crystal iyo substrate daawaynta dusha.

2. Hagaajinta habka: Sii macaamiisha taageerada farsamada ee koritaanka epitaxial, wax soo saarka qalabka iyo hababka kale si loo hagaajiyo waxqabadka alaabta.

3. Tijaabinta iyo shahaado bixinta: Bixi ogaanshaha cilada adag iyo shahaado tayada si loo hubiyo in substrate-ku buuxiyo heerarka warshadaha.

4.R & d iskaashiga: Si wadajir ah u horumariya qalabka cusub ee silikoon carbide macaamiisha si kor loogu qaado hal-abuurka tignoolajiyada.

Shaxda xogta

1 2 inch Silicon Carbide (SiC) Tilmaamaha Substrate-ka
Darajo		Wax soo saarka ZeroMPD Darajada (Z Fasalka)	Wax soo saarka caadiga ah Fasalka (P Degree)		Dummy Fasalka (D darajo)
Dhexroorka		3 00 mm ~ 305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hanuuninta Wafer		Xagasha ka baxsan: 4.0° dhanka <1120>±0.5° ee 4H-N
Cufnaanta Dheef-yar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
iska caabin	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hanuuninta Flat Primary		{10-10} ±5.0°
Dhererka Guriga aasaasiga ah	4H-N	N/A
	4H-SI	Darajo
Ka saarida gees		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare Taarikada Hex By Iftiin Xoogan Sare Meelo Badan Oo Iftiin Xoogan Sare leh Kaarboon Muuqaal ah Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare		Midna Aagga wadarta ≤0.05% Midna Aagga wadarta ≤0.05% Midna			Dhererka isugeynta ≤ 20 mm, hal dherer≤2 mm Aagga isugeynta ≤0.1% Aagga isugeynta≤3% Aagga isugeynta ≤3% Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifyada Iftiinka Xoogga Sare		Midna lama oggola ≥0.2mm ballac iyo qoto dheer			7 waa la oggol yahay, ≤1 mm midkiiba
(TSD) leexashada furka xadhigga		≤500 cm-2		N/A
(BPD) Meesha diyaaradda saldhiga		≤1000 cm-2		N/A
Wasakhda Silikon Dusha Sare ee Iftiinka Xoogan Sare		Midna
Baakadaha		Cassette Multi-wafer ah ama Konteenarka Waferka Keliya
Xusuusin:
1 Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. 2Xaqashada waa in lagu fiiriyaa wajiga Si kaliya. 3 Xogta kala-baxa waxay ka timid oo keliya KOH wafers-ka xardhan.

XKH waxay sii wadi doontaa inay ku maalgeliso cilmi-baarista iyo horumarinta si kor loogu qaado horumarka 12-inch silicon carbide substrates ee cabbirka weyn, cilladaha hooseeya iyo joogteynta sare, halka XKH ay sahamiso codsiyadeeda meelaha soo baxaya sida qalabka elektiroonigga ah ee macaamiisha (sida modules-yada awoodda qalabka AR / VR) iyo xisaabinta quantum. Iyada oo la dhimayo kharashyada iyo kordhinta awoodda, XKH waxay barwaaqo u keeni doontaa warshadaha semiconductor.