12 Inch SIC Substrate Silicon Carbide Primar Dhexdhexaadirka Dhexdhexaad 300mm Cabbirka 4h-n ku habboon inuu kululeeyo kuleylka tamarta sare

12 Inch Sic Substrate Silicon Carbide Primar Dhexdhexaadirka Dhexdhexaad 300mm Cabbirka 4h-n ku habboon kuleylka tamarta korantada ee sareeya ee muuqaalka leh

Sharraxaadda Gaaban:

12-inji oo Injikon Carbide (Substrate-ka '' Secublate ') waa mid aad u badan, oo ah wax qabad aad u sarreeya oo ka samaysan substrate-ka semiconductore laga sameeyay hal qayl ka mid ah qolofta silicon carbide. Silicon Carbide (Sic) waa aalad ballaaran oo pimiconduactor ah oo leh koronto aad u wanaagsan, kuleyl heer sare ah iyo farsamoyaqaanno, oo si weyn loogu isticmaalo soo-saarista aaladaha elektiroonigga ah ee awoodda sare, soo noqnoqoshada sare iyo jawi heerkulka sare ah iyo jawi heerkulka sare ah. Qeybta 12-inji (300mm) waa tilmaanta hadda ah ee hadda jirta ee tikniyoolajiyadda silicon Carbide, oo si weyn u wanaajin karto waxtarka waxtarka waxtarka iyo yareynta kharashaadka.

U dir emaylka

Si faahfaafo

Calaamadaha wax soo saarka

Astaamaha wax soo saarka

1. Xadgudubka kuleylka ee sarreeya

2. Xoogga Goob Joogashada Sare: Awoodda Burburka Burburku waa 10 jeer oo Silikon ah, oo ku habboon codsiyada cadaadiska sare.

3.wap Bandap: Bandgapku waa 3.26ev (4h-mic), oo ku habboon heerkulka sare iyo codsiyada soo noqnoqda ee soo noqnoqda.

4. Xaq daran: MOHS adken waa 9.2, labaad oo keliya in la diro, aad u fiican, waa inaad xirtaa iska caabbinta iyo xoog makaanikada.

5. Xasiloonida kiimikada: iska caabbinta adag, waxqabadka xasilloon ee heerkulka sare iyo jawiga adag.

6. Cabbirka weyn: 12 inji (300mm) substrate, wanaajinta hufnaanta wax soo saarka, yaree qiimaha qaybta.

7.Maxaad cilladaysan: tikniyoolajiyadda kobaca kobacadaha kobaca ee sareeya si loo hubiyo cufnaanta cilladaha hooseeya iyo joogteynta sare.

Jihada codsiga ugu weyn ee arjiga

1. Qalabka korantada korantada:

Moodooyinka: Waxaa loo isticmaalaa gawaarida korantada, wadista gawaarida gawaarida warshadaha iyo kuwa beddelaya awooda.

Dionis: sida xiidmaha schootky-ka (SBD), oo loo isticmaalo malax wax ku ool ah iyo beddelaadda sahayda korantada.

2. Aaladda rf:

Peoph Proford Complifier: Waxaa loo isticmaalaa 5g saldhigyada saldhiga isgaadhsiinta iyo isgaarsiinta dayax-gacmeedka.

Qalabka microwave: ku habboon nidaamyada Radar iyo Wireless-ka ee isgaarsiinta.

3. Gawaarida tamarta cusub:

Nidaamka wadista korontada korantada: Xakameeyayaasha matoorrada iyo dib-u-dhaca baabuurta korantada.

Ku dallaca qashinka: Module Power ee qalabka degdegga ah ee lagu dallaco.

4. Codsiyada warshadaha:

Invertort-ka korantada sare: loogu talagalay xakameynta dhaqdhaqaaqa ee warshadaha iyo maaraynta tamar.

Smart Grid: Gudbinta HVDC iyo Transformers Elektronikada Korantada.

5. Hawada hawada:

Elektaroonigga heerkulka sare: ku habboon jawiga heerkulka sare ee qalabka aerospace-ka.

6. Goobta cilmi baarista:

Warqadaha ballaaran ee Semiconductor Cilmi-baarista: Horumarinta agabyada iyo aaladaha cusub ee semiconductor.

Sunta 12-Injikon Carbide-ka ayaa ah nooc ka mid ah shemiconductor-ka heerka sare ee semiconductor-ka oo leh guryo aad u wanaagsan sida kuwa kuleylka sare ah, oo ah fagaare xoog badan iyo farqiga u ballaaran. Waxaa si weyn loogu isticmaalaa korantada korantada, aaladaha soo noqnoqda ee raadiyaha, gawaarida cusub ee tamarta, xakamaynta warshadaha iyo hawada, waana shey muhiim ah oo lagu hormariyo horumarka jiilka xiga ee aaladaha hufan ee awooda leh.

In kasta oo Silicon Carbide uu hadda ku jiro codsiyo toos ah oo ku saabsan elektiroonigga macaamiisha sida muraayadaha aruurada, awoodda elektiroonigyada hufan iyo elektiroonigyada awoodda leh ayaa taageeri kara xalka sahayda khafiifka ah, xalka tamarta sare ee aaladda Ar / VR. Waqtigan xaadirka ah, horumarka ugu weyn ee subbide-ka silicon Carbide wuxuu ku urursan yahay meelaha warshadaha ah sida gawaarida cusub ee tamarta, kaabayaasha isgaarsiinta, oo ay kor u qaadaan warshadaha semiconductor si loo horumariyo jihada hufan oo lagu kalsoonaan karo.

Xkh waxaa ka go'an inay siiso wax tayo sare leh 12 "SIC oo ka mid ah substrates taageero iyo adeegyo farsamo oo dhameystiran, oo ay ku jiraan:

1. Soosaarka loo habeeyay

3. Tijaabada iyo shahaadada: Bixi ogaanshaha cillad adag iyo shahaadada tayada si loo hubiyo in heerarka warshadaha la kulmaya.

Wadashaqeynta 4.R & D

Shaxda xogta

1 2 inji inlicon Carbide (Sic) Sharaxaadda Subnet
Heer u qaybin		Soosaarka Zerompd Fasalka (z Fasalka)	Soosaarka caadiga ah Fasalka (PAST PASS)		Fasalka Dummy (DEFEFE)
Dhexroor		3 0 0 mm ~ 1305mm
Dhumuc weyni	4H-n	750 jeer ± 15 μm	750 jeer ± 25 μm
	4H-SI	750 jeer ± 15 μm	750 jeer ± 25 μm
Hanuuninta hanuuninta		Ka baxsan dhidibka: 4.0 ° dhanka <1120> ± 0.5 ° 4h-n-n, axis: <° 1>
Cufnaanta micropipe	4H-n	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤0cm-2		≤25cm-2
Caadidsan	4H-n	0.015 ~ 0.024 ω ω · cm			0.015 ~ 0.028 ω ω · cm
	4H-SI	≥1E10 ω ω · cm			≥1E5 ω ω · cm
Hanuuninta aasaasiga ah ee aasaasiga ah		{10-10} ± 5.0 °
Dhererka guryaha aasaasiga ah	4H-n	N / a
	4H-SI	Qaybsanaan
Edte ka saarida		3 mm
Ltv / ttv / Bowl / Warp		≤5μm / ≤15μm / ≤35 μm / ≤55 μm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 μm
Dhaxeya		Polish i≤1 nm
		CMP Ra≤0.2 nm			Rav00.5 nm
Dillaacyada dillaacyada iftiinka sare Taargooyinka Hex by iftiinka sare Meelaha polytype iftiinka xoogga badan JOOJINTA KARTAANKA KARIIMKA Xoqidda dusha sare ee silicon by iftiinka xoogga badan		Midna Aagga isugeynta ≤0.05% Midna Aagga isugeynta ≤0.05% Midna			Dhererka isugeynta ≤ 20 mm, dherer hal mar ah Aagga isugeynta ≤0.1% Isugeynta aagga qiimeynta Aagga isugeynta ≤3% Dhererka isugeynta illaa dhererka ah
Cidhifka geeska iftiinka sare		Midkoodna looma oggola ≥0.2mm ballac iyo qoto dheer			7 loo oggol yahay, ≤1 mm midkiiba
(TSD) Xirmooyinka Xarig		≤500 cm-2		N / a
(BPD) Deeqda Diyaaradda Dhismaha		≤1000 cm-2		N / a
Fasaxa dusha silikoolka ee iftiinka iftiinka sare		Midna
Ka iibsi		Cajalad badan oo haasley ah ama weel xaashi ah
Ogeysiis:
1 Caleemaha xadka waxay quseeyaan dhammaan dusha sare marka laga reebo aagga ka saarida geeska. 2-aad xorta waa in lagu hubiyaa wajiga SI kaliya. 3 Xogta kala-goynta ayaa ka socota oo keliya koh etched wefers.

XKH waxay sii wadi doontaa inay maalgashi ku sameyso cilmi-baarista iyo horumarka si kor loogu qaado horumarka guud ee 12-inji Cabbirro weyn, halka XKH uu sahaminayo barnaamijyadooda aaladaha macaamiisha (sida aaladda korantada ee aaladda ar / aaladda VR) iyo xisaabinta. Iyaga oo yareynaya kharashaadka iyo kordhinta awooda, Xkh waxay keenaysaa barwaaqo ee warshadaha semiconductor.