12 Inch Substrate SiC Dhexroor 300mm Dhumuc 750μm Nooca 4H-N waa la habeyn karaa

12 Inch SiC substrate Dhexroor 300mm Dhumuc 750μm Nooca 4H-N waa la habeyn karaa Sawirka La Soo Bandhigay

Sharaxaad Gaaban:

Iyada oo ay jirto marxalad muhiim ah oo ku saabsan kala-guurka warshadaha semiconductor-ka ee u dhexeeya xalal hufan oo isku dhafan, soo ifbixidda substrate-ka 12-inji ah ee SiC (substrate-ka silicon carbide-ka 12-inji ah) ayaa si aasaasi ah u beddeshay muuqaalka. Marka la barbardhigo qeexitaannada dhaqameed ee 6-inji iyo 8-inji ah, faa'iidada cabbirka weyn ee substrate-ka 12-inji ah waxay kordhisaa tirada jajabyada la soo saaro halkii wafer in ka badan afar laab. Intaa waxaa dheer, qiimaha cutubka substrate-ka 12-inji ah ee SiC ayaa hoos u dhacay 35-40% marka la barbar dhigo substrate-ka caadiga ah ee 8-inji ah, taas oo muhiim u ah qaadashada baahsan ee alaabada dhammaadka.
Annagoo adeegsanayna tiknoolajiyaddayada kobaca uumiga ee gaarka ah, waxaan gaarnay xakamaynta ugu horreysa ee warshadaha ee cufnaanta kala-baxa ee kiristaallada 12-inji ah, taasoo bixinaysa aasaas agab oo heer sare ah oo loogu talagalay soo saarista aaladaha xiga. Horumarkani waa mid si gaar ah muhiim u ah iyadoo ay jirto yaraanta jajabyada adduunka ee hadda jira.

Aaladaha muhiimka ah ee korontada ee codsiyada maalinlaha ah - sida saldhigyada degdega ah ee EV iyo saldhigyada saldhigga 5G - ayaa si isa soo taraysa u qaadanaya substrate-kan cabbirka weyn. Gaar ahaan jawiga heerkulka sare, danab sare, iyo jawiyada kale ee shaqada ee adag, substrate-ka 12-inch ee SiC wuxuu muujinayaa xasillooni aad uga sarreysa marka loo eego walxaha ku salaysan silicon.

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Astaamaha

Xuduudaha farsamada

Qeexitaanka Substrate-ka Silicon Carbide (SiC) ee 12 inji ah
Fasal		Soosaarka ZeroMPD Darajada (Darajada Z)	Waxsoosaarka Caadiga ah Darajada (Darajada P)		Fasalka Madow (D Darajada)
Dhexroorka		3 0 0 mm ~ 1305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Jihaynta Wafer-ka		Dhidibka ka baxsan: 4.0° dhanka <1120 >±0.5° ee 4H-N, Dhidibka saaran: <0001>±0.5° ee 4H-SI
Cufnaanta Tuubooyinka Yaryar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Iska caabin	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Jihada Fidsan ee Aasaasiga ah		{10-10} ±5.0°
Dhererka Fidsan ee Aasaasiga ah	4H-N	Lama Helin
	4H-SI	Qaylo-dhaan
Ka-saarista Cidhifka		3 mm
LTV/TTV/Qaanso/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Boolish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Kaarboonka Muuqaalka ah Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro Aagga wadarta ah ≤0.05% Midna ma jiro			Dhererka wadarta ≤ 20 mm, dherer hal ah ≤ 2 mm Aagga wadarta ah ≤0.1% Aagga wadajirka ah≤3% Aagga wadarta ah ≤3% Dhererka wadarta ≤1 × dhexroorka wafer
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh		Lama oggola ballac iyo qoto dheer oo ah ≥0.2mm			7 la oggol yahay, ≤1 mm midkiiba
(TSD) Kala-baxa boolal-xidhka		≤500 cm-2		Lama Helin
(BPD) Kala-baxa saldhigga diyaaradda		≤1000 cm-2		Lama Helin
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan		Midna ma jiro
Baakad		Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah
Qoraalo:
1 Xaddidaadaha cilladaha ayaa khuseeya dusha sare ee wafer-ka oo dhan marka laga reebo aagga ka-saarista geeska. 2 Xoqashada waa in lagu hubiyaa wejiga Si oo keliya. 3 Xogta kala-baxa waxay ka timid oo keliya wafers-ka KOH ee la xardhay.

Astaamaha Muhiimka ah

1. Awoodda Wax Soo Saarka iyo Faa'iidooyinka Kharashka: Wax soo saarka ballaaran ee substrate-ka 12-inji ee SiC (substrate silicon carbide 12-inji ah) wuxuu calaamad u yahay marxalad cusub oo ku saabsan wax soo saarka semiconductor-ka. Tirada jajabyada laga heli karo hal wafer waxay gaartaa 2.25 jeer ka badan substrate-ka 8-inji ah, taasoo si toos ah u horseedaysa kor u kac ku yimaada hufnaanta wax soo saarka. Jawaab celinta macaamiisha ayaa tilmaamaysa in qaadashada substrate-ka 12-inji ah ay hoos u dhigtay kharashaadka wax soo saarka module-kooda korontada 28%, taasoo abuurtay faa'iido tartan oo go'an suuqa aadka loogu muransan yahay.
2. Sifooyinka Jireed ee Aan La Aqoon: Substrate-ka 12-inji ah ee SiC wuxuu dhaxlaa dhammaan faa'iidooyinka maaddada carbide-ka ee silicon - hufnaanteeda kulaylka waa 3 jeer ka silicon, halka xooggeeda goobta burburka uu gaaro 10 jeer ka silicon. Astaamahani waxay awood u siinayaan aaladaha ku salaysan substrate-ka 12-inji inay si joogto ah ugu shaqeeyaan jawi heerkul sare leh oo ka badan 200°C, taasoo ka dhigaysa kuwo si gaar ah ugu habboon codsiyada adag sida baabuurta korontada ku shaqeeya.
3. Tiknoolajiyada Daaweynta Dusha Sare: Waxaan soo saarnay hab cusub oo kiimiko ah oo lagu nadiifiyo farsamada gacanta (CMP) gaar ahaan substrates-ka 12-inji ah ee SiC, iyadoo la gaarayo fidsanaan dusha sare oo heer atomi ah (Ra<0.15nm). Horumarkan wuxuu xalliyaa caqabadda adduunka oo dhan ee daaweynta dusha sare ee silicon carbide wafer, iyadoo la nadiifinayo caqabadaha koritaanka epitaxial tayo sare leh.
4. Waxqabadka Maareynta Kulaylka: Codsiyada wax ku oolka ah, substrates-ka 12-inji ee SiC waxay muujinayaan awoodo cajiib ah oo kala firdhinta kulaylka. Xogta tijaabada ah waxay muujinaysaa in iyadoo la adeegsanayo cufnaanta awoodda isku mid ah, aaladaha isticmaalaya substrates-ka 12-inji waxay ku shaqeeyaan heerkul ka hooseeya 40-50°C marka loo eego aaladaha ku salaysan silicon, taasoo si weyn u kordhinaysa cimriga adeegga qalabka.

Codsiyada ugu Muhiimsan

1. Nidaamka Cusub ee Gaadiidka Tamarta: Substrate-ka 12-inji ah ee SiC (substrate silicon carbide 12-inji ah) ayaa kacaan ku samaynaya qaab-dhismeedka awoodda baabuurta korontada ku shaqeeya. Laga bilaabo dallacayaasha saaran (OBC) ilaa kuwa ugu muhiimsan ee wadista iyo nidaamyada maaraynta baytariyada, horumarinta hufnaanta ee ay keeneen substrate-ka 12-inji ah waxay kordhisaa kala duwanaanshaha gaadiidka 5-8%. Warbixinnada ka imanaya shirkad hormuud u ah baabuurta ayaa tilmaamaya in qaadashada substrate-keena 12-inji ah ay yaraysay luminta tamarta ee nidaamkooda dallacaadda degdegga ah 62%.
2. Qaybta Tamarta La Cusboonaysiin Karo: Saldhigyada korontada ee sawir-qaadista, qalabka korontada ku shaqeeya ee ku salaysan substrates-ka SiC ee 12-inji ah ma aha oo kaliya inay leeyihiin arrimo qaab yar laakiin sidoo kale waxay gaaraan hufnaan beddelaad oo ka badan 99%. Gaar ahaan xaaladaha jiilka qaybinta, hufnaantan sare waxay u tarjumeysaa keydinta sanadlaha ah ee boqolaal kun oo yuan oo khasaare koronto ah oo loogu talagalay hawl wadeennada.
3. Otomaatigga Warshadaha: Beddelayaasha soo noqnoqda ee isticmaalaya substrates-ka 12-inji ah waxay muujiyaan waxqabad aad u wanaagsan robot-yada warshadaha, qalabka mashiinka CNC, iyo qalabka kale. Astaamahooda beddelka soo noqnoqda sare waxay hagaajiyaan xawaaraha jawaabta matoorka 30% halka ay yareeyaan faragelinta elektaroonigga ah saddex meelood meel xalalka caadiga ah.
4. Cusboonaysiinta Elektarooniga Macaamiisha: Tiknoolajiyada casriga ah ee casriga ah ee jiilka soo socda ee dallacaadda degdega ah ayaa bilaabay inay qaataan substrate-ka SiC ee 12-inji ah. Waxaa la saadaalinayaa in alaabada dallacaadda degdega ah ee ka sarreeya 65W ay si buuxda ugu wareegi doonaan xalalka carbide-ka silicon, iyadoo substrate-ka 12-inji ah ay soo baxayaan doorashada ugu habboon ee waxqabadka kharashka.

Adeegyada Loo Habeeyey XKH ee Substrate-ka SiC ee 12-inch ah

Si loo daboolo shuruudaha gaarka ah ee substrate-ka SiC ee 12-inji ah (substrate-ka carbide-ka silicon ee 12-inji ah), XKH waxay bixisaa taageero adeeg oo dhammaystiran:
1. Habaynta Dhumucda:
Waxaan bixinaa substrate-yo 12-inji ah oo leh qeexitaanno dhumuc oo kala duwan oo ay ku jiraan 725μm si loo daboolo baahiyaha kala duwan ee codsiga.
2. Fiirsashada daawada:
Wax-soo-saarkeenu wuxuu taageeraa noocyo badan oo gudbin ah oo ay ku jiraan nooca n-type iyo substrates nooca p, iyadoo la xakameynayo iska caabinta saxda ah ee u dhaxaysa 0.01-0.02Ω·cm.
3. Adeegyada Tijaabada:
Iyada oo la adeegsanayo qalab dhammaystiran oo tijaabo ah oo heer wafer ah, waxaan bixinnaa warbixinno dhammaystiran oo kormeer ah.
XKH waxay fahansan tahay in macaamiil kastaa uu leeyahay shuruudo gaar ah oo loogu talagalay substrate-ka 12-inji ah ee SiC. Sidaa darteed waxaan bixinaa qaabab iskaashi ganacsi oo dabacsan si loo bixiyo xalalka ugu tartanka badan, ha ahaato:
· Muunadaha cilmi-baarista iyo horumarinta
· Iibsiyada wax soo saarka mugga
Adeegyadayada gaarka ah waxay hubinayaan inaan dabooli karno baahiyahaaga farsamo iyo wax soo saar ee gaarka ah ee substrates-ka SiC ee 12-inch ah.