12 inch substrate SiC Dhexroorka 300mm Dhumucda 750μm 4H-N Nooca waa la habeyn karaa

12 inch Substrate SiC Dhexroorka 300mm Dhumucda 750μm 4H-N waa la habeyn karaa Sawirka

Sharaxaad Gaaban:

Marxaladda muhiimka ah ee u gudubka warshadaha semiconductor ee xagga xalalka waxtarka badan iyo is haysta, soo bixitaanka 12-inch SiC substrate (12-inch silicon carbide substrate) ayaa asal ahaan beddeshay muuqaalka. Marka la barbardhigo 6-inch iyo 8-inji tilmaamo dhaqameed, faa'iidada cabbirka weyn ee 12-inch substrate waxay kordhisaa tirada jajabyada la soo saaro wafer in ka badan afar laab. Intaa waxaa dheer, qiimaha cutubka 12-inji substrate-ka SiC waxaa lagu dhimay 35-40% marka la barbar dhigo substrate-ka caadiga ah ee 8-inch, kaas oo muhiim u ah qaadashada baahsan ee alaabta dhamaadka.
Anagoo adeegsanayna tignoolajiyada kobaca gaadiidka uumiga iska leh, waxaan gaadhnay xakamaynta hogaaminta warshadaha ee cufnaanta kala-baxa ee 12-inch crystals, anagoo siinaya aasaaska agabka gaarka ah soo saarida aaladaha xiga. Horumarkan ayaa si gaar ah muhiim u ah iyadoo ay jirto gabaabsi caalami ah oo hadda jira.

Aaladaha tamarta muhiimka ah ee codsiyada maalinlaha ah-sida saldhigyada EV ee degdegga ah iyo saldhigyada 5G-ayaa si isa soo taraysa u qaadanaya substrate-ka weyn. Gaar ahaan heerkul sare, koronto-sare, iyo deegaan qallafsan oo kale, substrate 12-inch SiC wuxuu muujinayaa xasillooni aad u sareysa marka loo eego walxaha ku saleysan silikoon.

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Xuduudaha farsamada

12 inch Silicon Carbide (SiC) Tilmaamaha Substrate-ka
Darajo		Wax soo saarka ZeroMPD Darajada (Z Fasalka)	Wax soo saarka caadiga ah Fasalka (P Degree)		Dummy Fasalka (D darajo)
Dhexroorka		3 00 mm ~ 1305mm
Dhumucda	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hanuuninta Wafer		Xagasha ka baxsan: 4.0° dhanka <1120>±0.5° ee 4H-N
Cufnaanta Dheef-yar	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
iska caabin	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hanuuninta Flat Primary		{10-10} ±5.0°
Dhererka Guriga aasaasiga ah	4H-N	N/A
	4H-SI	Darajo
Ka saarida gees		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Qalafsanaan		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Dildilaaca Cidhifyada Iftiinka Xoogan Sare Taarikada Hex By Iftiin Xoogan Sare Meelo Badan Oo Iftiin Xoogan Sare leh Kaarboon Muuqaal ah Dusha sare ee Silikoon xoqida Iftiinka Xoogan Sare		Midna Aagga wadarta ≤0.05% Midna Aagga wadarta ≤0.05% Midna			Dhererka isugeynta ≤ 20 mm, hal dherer≤2 mm Aagga isugeynta ≤0.1% Aagga isugeynta≤3% Aagga isugeynta ≤3% Dhererka isugeynta≤1× dhexroorka wafer
Chips-ka Cidhifyada Iftiinka Xoogga Sare		Midna lama oggola ≥0.2mm ballac iyo qoto dheer			7 waa la oggol yahay, ≤1 mm midkiiba
(TSD) leexashada furka xadhigga		≤500 cm-2		N/A
(BPD) Meesha diyaaradda saldhiga		≤1000 cm-2		N/A
Wasakhda Silikon Dusha Sare ee Iftiinka Xoogan Sare		Midna
Baakadaha		Cassette Multi-wafer ah ama Konteenarka Waferka Keliya
Xusuusin:
1 Xadka cilladuhu waxay khuseeyaan dhammaan dusha sare ee waferka marka laga reebo aagga ka saarista cidhifka. 2Xaqashada waa in lagu fiiriyaa wajiga Si kaliya. 3 Xogta kala-baxa waxay ka timid oo keliya KOH wafers-ka xardhan.

Astaamaha Muhiimka ah

1.Waxsoosaarka Awoodda iyo Faa'iidooyinka Kharashka: Wax-soo-saarka ballaaran ee 12-inch SiC substrate (12-inch silicon carbide substrate) waxay calaamad u tahay marxalad cusub oo soo saarista semiconductor. Tirada jajabyada laga helo hal mar waxay gaartaa 2.25 jeer ka badan 8-inch substrates, taasoo si toos ah u horseedaysa wax-soo-saarka wax-soo-saarka. Jawaab celinta macaamiishu waxay muujinaysaa in qaadashada 12-inch substrates ay hoos u dhigtay kharashaadkooda wax-soo-saarka moduleka tamarta 28%, taasoo abuuraysa faa'iido tartan oo muhiim ah suuqa aadka loogu loolamayo.
2.Outstanding Physical Properties: The 12-inch SiC substrate dhaxla dhammaan faa'iidooyinka silicon carbide walxaha - ay kulaylka conductivity waa 3 jeer in silikon, halka ay burbur xoog beerta gaadho 10 jeer in silikon. Tilmaamahani waxay awood u siinayaan aaladaha ku salaysan 12-inch substrates inay si deggan ugu shaqeeyaan jawi kuleyl sare leh oo ka sarreeya 200 ° C, taasoo ka dhigaysa inay si gaar ah ugu habboon yihiin codsiyada dalabaadka sida baabuurta korontada.
3.Surface Teatment Technology: Waxaan soo saarnay habka cusub ee nadiifinta farsamada kiimikada (CMP) gaar ahaan 12-inch SiC substrates, gaaritaanka flatness dusha atomiiga (Ra <0.15nm). Horumarkaani wuxuu xalliyaa caqabada caalamiga ah ee daawaynta dusha sare ee silikoon carbide wafer dhexroor weyn, nadiifinta caqabadaha koritaanka epitaxial tayo sare leh.
4. Waxqabadka Maareynta Kulaylka: Codsiyada la taaban karo, 12-inch substrates SiC waxay muujinayaan awoodaha kuleylka kuleylka ee cajiibka ah. Xogta tijaabadu waxay muujinaysaa in cufnaanta isku midka ah, aaladaha isticmaalaya substrates 12-inji ay ku shaqeeyaan heerkul 40-50°C ka hooseeya aaladaha silikon ku salaysan, taasoo si weyn u kordhinaysa nolosha adeegga qalabka.

Codsiyada ugu muhiimsan

1.New Energy Vehicle Ecosystem: Substrate 12-inch SiC substrate (12-inch silicon carbide substrate) ayaa wax ka beddelaya qaab dhismeedka tamarta korantada ee baabuurta. Laga soo bilaabo dabaylaha dusha sare (OBC) ilaa rogaha wadayaasha waaweyn iyo nidaamyada maaraynta baytariga, hagaajinta waxtarka leh ee ay keeneen substrates 12-inji waxay kordhiyaan kala duwanaanta baabuurta 5-8%. Warbixinnada ka soo baxa baabuurta hormuudka ah waxay muujinayaan in qaadashada 12-inch substrates ay hoos u dhigtay lumista tamarta ee nidaamkooda degdegga ah 62%.
2. Qaybta Tamarta La cusboonaysiin karo: Saldhigyada korantada ee sawir-qaadista, roog-rogayaasha ku salaysan 12-inch SiC substrates kaliya ma muujinayaan arrimo qaab yar laakiin sidoo kale waxay gaaraan waxtarka beddelka oo ka sarreeya 99%. Gaar ahaan xaaladaha jiilka la qaybiyey, waxtarkan sare wuxuu tarjumayaa kaydinta sannadlaha ah ee boqollaal kun oo yuan ee khasaaraha korontada ee hawl-wadeennada.
3.Industrial Automation: Beddelayaasha soo noqnoqda ee isticmaalaya 12-inch substrates waxay muujinayaan waxqabad aad u fiican oo ku saabsan robots warshadaha, qalabka mashiinka CNC, iyo qalab kale. Sifooyinkooda beddelka-sare ee soo noqnoqda waxay hagaajiyaan xawaaraha jawaabta dhaqdhaqaaqa 30% iyagoo yareynaya faragelinta korantada ilaa saddex-meelood meel xalalka caadiga ah.
4.Cusub Electronics Innovation: Jiilka xiga ee casriga ah ee teknoolajiyada ku dallacaadda degdega ah ayaa bilaabay qaadashada 12-inch substrates SiC. Waxaa la saadaalinayaa in alaabada degdegga ah ee ka sarreysa 65W ay si buuxda ugu gudbi doonaan xalalka silikoon carbide, oo leh 12-inji substrates oo soo baxaya sida xulashada waxqabadka ugu habboon.

XKH Adeegyada Habboon ee 12-inch ee SiC Substrate

Si loo buuxiyo shuruudaha gaarka ah ee 12-inch substrates SiC (12-inch silicon carbide substrates), XKH waxay bixisaa taageero adeeg oo dhamaystiran:
1.Qabashada dhumucda:
Waxaan bixinaa substrates 12-inji ah oo qeexid dhumucdeedu kala duwan tahay oo ay ku jiraan 725μm si loo daboolo baahiyaha codsi ee kala duwan.
2. Qaadashada qaadashada
Wax-soo-saarkayagu wuxuu taageeraa noocyo badan oo koronto oo ay ku jiraan n-nooca iyo substrate-ka nooca p, oo leh kontorool iska caabin sax ah oo u dhexeeya 0.01-0.02Ω · cm.
3.Adeegyada Imtixaanka:
Qalab tijaabo ah oo heer wafer ah oo dhamaystiran, waxaanu bixinaa warbixino kormeer oo buuxa.
XKH waxay fahamsan tahay in macmiil kastaa leeyahay shuruudo gaar ah oo loogu talagalay 12-inch substrates SiC. Sidaa darteed waxaan bixinaa moodooyin iskaashi ganacsi oo dabacsan si aan u bixino xalalka ugu tartanka badan, haddii ay ahaan lahayd:
Muunadaha R&D
Iibka wax soo saarka mugga
Adeegyadayada gaarka ah waxay xaqiijinayaan inaan buuxin karno baahiyahaaga farsamo iyo soosaarka gaarka ah ee 12-inch substrates SiC.