Wafer Silikoon ah oo Bir ah oo Ti/Cu ah (Titanium/Copper)

Sharaxaad Gaaban:

AnnagaWaftiyada silikoon ee birta lagu dahaadhay ee Ti/Cuwaxay leedahay substrate tayo sare leh oo silicon ah (ama galaas/quartz ikhtiyaari ah) oo lagu dahaadhaylakabka dhejiska titaniumiyo alakabka gudbinta naxaastaisticmaalayasputtering magnetron-ka caadiga ahLakabka Ti wuxuu si weyn u hagaajiyaa isku-dhejinta iyo xasilloonida habka, halka lakabka sare ee Cu uu bixiyo dusha sare oo iska caabin yar leh, oo isku mid ah oo ku habboon is-dhexgalka korantada iyo farsamada microfabrication-ka ee hoose.


Astaamaha

Dulmar Guud

AnnagaWaftiyada silikoon ee birta lagu dahaadhay ee Ti/Cuwaxay leedahay substrate tayo sare leh oo silicon ah (ama galaas/quartz ikhtiyaari ah) oo lagu dahaadhaylakabka dhejiska titaniumiyo alakabka gudbinta naxaastaisticmaalayasputtering magnetron-ka caadiga ahLakabka Ti wuxuu si weyn u hagaajiyaa isku-dhejinta iyo xasilloonida habka, halka lakabka sare ee Cu uu bixiyo dusha sare oo iska caabin yar leh, oo isku mid ah oo ku habboon is-dhexgalka korantada iyo farsamada microfabrication-ka ee hoose.

Loogu talagalay labadaba cilmi-baarista iyo codsiyada tijaabada ah, buskudyadan waxaa laga heli karaa cabbirro iyo heerar iska caabin ah oo kala duwan, iyadoo la adeegsanayo habayn dabacsan oo loogu talagalay dhumucda, nooca substrate-ka, iyo qaabeynta dahaarka.

Astaamaha Muhiimka ah

  • Ku dhegid xooggan iyo isku hallaynLakabka isku xidhka Ti wuxuu xoojiyaa u hoggaansanaanta filimka ee Si/SiO₂ wuxuuna hagaajiyaa adkeysiga maaraynta

  • Dusha sare ee conductivityDahaarka Cu wuxuu bixiyaa waxqabad koronto oo aad u fiican xiriirada iyo qaab-dhismeedka tijaabada

  • Kala duwanaansho ballaaran oo habayn ah: cabbirka wafer-ka, iska caabinta, jihada, dhumucda substrate-ka, iyo dhumucda filimka ayaa la heli karaa marka la codsado

  • Substrate-ka habka u diyaarsan: oo la jaan qaadaya shaqada caadiga ah ee shaybaarka iyo shaqada farsamada (lithography, dhismaha electroplating, metrology, iwm.)

  • Taxanaha walxaha la heli karo: marka laga reebo Ti/Cu, waxaan sidoo kale bixinnaa Au, Pt, Al, Ni, Ag wafers bir ah oo dahaar leh

Qaab-dhismeedka Caadiga ah iyo Dhigista

  • Stacklakabka dhejiska + lakabka dhejiska Ti + lakabka dahaarka Cu

  • Habka caadiga ah: Buufinta Magnetron-ka

  • Habraacyo ikhtiyaari ahUumi-baxa kulaylka / Electroplating (shuruudaha Cu ee dhumuc weyn)

Sifooyinka Farsamada ee Muraayadda Quartz

Shay Xulashooyinka
Cabbirka Wafer-ka 2", 4", 6", 8"; 10×10 mm; cabbirro la jarjaray oo gaar ah
Nooca gudbidda Nooca P / Nooca N / Difaac sare oo gudaha ah (Un)
Jihaynta <100>, <111>, iwm.
Iska caabin <0.0015 Ω·cm; 1-10 Ω · cm; >1000-10000 Ω·cm
Dhumuc (µm) 2": 200/280/400/500; 4": 450/500/525; 6": 625/650/675; 8": 650/700/725/775; gaar ahaan
Qalabka substrate-ka Silikoon; quartz ikhtiyaari ah, galaas BF33, iwm.
Dhumucda filimka 10 nm / 50 nm / 100 nm / 150 nm / 300 nm / 500 nm / 1 µm (la habeyn karo)
Ikhtiyaarada filimada birta ah Ti/Cu; sidoo kale Au, Pt, Al, Ni, Ag waa la heli karaa

 

Wafer Silikoon ah oo Bir ah oo Ti/Cu ah (Titanium/Copper)4

Codsiyada

  • Taabashada Ohmic iyo substrate-ka gudbiyaloogu talagalay baaritaanka iyo horumarinta qalabka iyo tijaabada korontada

  • Lakabyada abuurka ee loogu talagalay electroplating(RDL, qaab-dhismeedka MEMS, dhismaha Cu ee qaro weyn)

  • Substrate-ka koritaanka Sol-gel iyo nanomaterial-kacilmi-baarista nano iyo filimada khafiifka ah

  • Mikroskoobka & cabbirka dusha sare(Diyaarinta iyo cabbiraadda muunadda SEM/AFM/SPM)

  • Dusha sare ee bayooloji/kiimikadasida goobaha dhaqanka unugyada, microarrays-ka borotiinka/DNA, iyo substrates-ka reflectometry

FAQ (Ti/C Bir-Dahaarka Silicon Wafers)

S1: Maxaa lakabka Ti loogu isticmaalaa dahaarka Cu hoostiisa?
A: Titanium wuxuu u shaqeeyaa sidiilakabka dhegdheg (isku-xidhka), hagaajinta ku xidhnaanta naxaasta ee substrate-ka iyo xoojinta xasilloonida is-dhexgalka, taas oo ka caawisa yaraynta diirka ama dildilaaca inta lagu jiro maaraynta iyo farsamaynta.

S2: Waa maxay qaabaynta caadiga ah ee dhumucda Ti/Cu?
A: Isku-darka caadiga ah waxaa ka mid ahTi: tobanaan nm (tusaale ahaan, 10–50 nm)iyoCu: 50–300 nmfilimada buufinta leh. Lakabyada Cu ee dhumuc weyn leh (µm-heer) waxaa badanaa lagu gaaraaElektroplating on lakabka abuur Cu ah oo la buufiyay, iyadoo ku xiran codsigaaga.

S3: Ma dahaadhi kartaa labada dhinac ee wafer-ka?
J: Haa.Dahaarka hal dhinac ama laba dhinac ahwaa la heli karaa marka la codsado. Fadlan sheeg shuruudahaaga markaad dalbanayso.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.

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