Substrate
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Substrate SiC P iyo D darajo Dia50mm 4H-N 2inch
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Muraayada TGV waxa ay feedhta dhalada wafer 12inch ah
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Nooca SiC Ingot 4H-N nooca Dummy fasalka 2inch 3inch 4inch 6inch dhumucdiisuna: ＞10mm
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4H-N Dia205mm Iniinta SiC ee Shiinaha P iyo darajada D Monocrystaline
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6inch SiC Epitaxyy wafer N/P nooca aqbal habaysan
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Dia150mm 4H-N 6inch SiC substrate Soo saarista iyo darajada carrabka leh
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Silicon Dioxide wafer SiO2 wafer qaro weyn oo La dafiray, Heerka Koowaad iyo Imtixaanka
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3inch Dia76.2mm wafer safayr 0.5mm dhumucdiisuna waxay tahay C-diyaarad SSP
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4inch SiC Epi wafer oo loogu talagalay MOS ama SBD
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FZ CZ Si wafer oo kayd ah 12inch Silicon wafer Prime ama Tijaabada
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2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
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8inch wafer Silicon P/N-nooca (100) 1-100Ω substrate soo celinta qashinka