Substrate
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6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy
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Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucdiisuna 5-10mm Cilmi-baadhis
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6 inch sapphire Boule sapphire maran hal crystal Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Nooca Adayga Sare ee Iska caabinta Daxalka Darajada Koowaad
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2inch Silicon Carbide Wafer 6H-N Nooca Darajada koowaad ee Cilmi-baarista Darajada Dummy Fasalka 330μm 430μm Dhumucdiisuna
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2inch Silicon carbide substrate 6H-N dhexroor laba-geesood leh oo dhalaalaya 50.8mm darajo cilmi baaris
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p-nooca 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5° Eber MPD
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Substrate-ka SiC P-nooca 4H/6H-P 3C-N 4inch leh dhumucdiisuna tahay 350um heerka wax soo saarka
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4H/6H-P 6inch SiC wafer eber eber MPD wax soo saarka Fasalka dummy
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P-nooca SiC wafer 4H/6H-P 3C-N 6inch dhumucdiisuna tahay 350 μm oo leh Hanuuninta Flat Aasaasiga ah
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Habka TVG ee quartz sapphire BF33 wafer wafer dhalo feeray
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Kelida Crystal Silicon Wafer Si Substrate Type N/P Wafer Silikon Carbide Ikhtiyaar ah