Substrate
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Indium Antimonide (InSb) wafers N nooca P nooca Epi oo diyaar ah Te doped ama Ge doped 2inch 3inch 4inch dhumucda Indium Antimonide (InSb) wafers
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
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Sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY Habka La beddeli karo
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GaAs awoodda sare ee epitaxial wafer substrate gallium arsenide wafer awood leysarka dhererka hirarka 905nm ee daaweynta laysarka
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL dalool toosan oogada sare ee qiiqa laysarka hirarka hirarka 940nm hal isgoys
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2inch 3inch 4inch InP epitaxial wafer substrate APD iftiinka isgaarsiinta fiber optic ama LiDAR
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giraanta sapphire oo ka samaysan walxaha sapphire synthetic
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2 inch Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm polishing double-dhined High conductivity kulaylka isticmaalka hoose
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giraanta sapphire oo dhan laga sameeyay sapphire shaybaadhka hufan ee sapphire
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Sapphire ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Hufnaan sare oo Al2O3 BK7 JGS1 JGS2 Qalabka indhaha
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade