Substrate
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL dalool toosan oogada sare ee qiiqa laysarka hirarka hirarka 940nm hal isgoys
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2inch 3inch 4inch InP epitaxial wafer substrate APD iftiinka isgaarsiinta fiber optic ama LiDAR
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giraanta sapphire oo ka samaysan walxo sapphire synthetic
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giraanta sapphire oo dhan laga sameeyay sapphire shaybaadhka hufan ee sapphire
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Sapphire ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Hufnaan sare oo Al2O3 BK7 JGS1 JGS2 Qalabka indhaha
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Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N nooca Dummy / dhumucda fasalka koowaad waa la habeyn karaa
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6 gudaha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Fasalka Dummy
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Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucdiisuna tahay 5-10mm Cilmi-baadhis
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6 inch sapphire Boule sapphire maran hal crystal Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Nooca Adayga Sare ee Iska caabinta Daxalka Darajada Koowaad