Substrate
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Nooca N-nooca P ee aan lahayn nooca 2-inji ah ee InSb wafer 111 100 ee loogu talagalay Baadhayaasha Infrared-ka
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Wafers Indium Antimonide (InSb) Nooca N Nooca P Epi diyaar u ah oo aan la qallajin Te doped ama Ge doped 2 inji 3 inji dhumucdiisuna tahay 4 inji Indium Antimonide (InSb)
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C nooca 2inch 3inch 4inch 6inch 8inch
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Dahaarka sapphire 3 inji 4 inji 6 inji ah Habka Monocrystal CZ KY La habeyn karo
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2 inji ah oo ah nooca Sic silicon carbide substrate 6H-N Nooca 0.33mm 0.43mm oo laba-geesood ah oo la nadiifiyo. Kontoroolka kulaylka oo sarreeya Isticmaalka korontada oo hooseeya
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GaAs substrate-ka wafer-ka ee awoodda sare leh ee gallium arsenide wafer-ka awoodda leh ee laysarka hirarka 905nm ee daaweynta caafimaadka laysarka
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Wafer laysarka GaAs ah oo leh dalool toosan oo VCSEL ah oo hawada sare ka soo baxa hirarka laysarka 940nm oo isku xir ah
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2inji 3inji 4inji InP epitaxial wafer substrate APD light detector oo loogu talagalay isgaarsiinta fiber optic ama LiDAR
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Giraangiraha safayr oo laga sameeyay walxo safayr ah oo macmal ah Adkeysiga Mohs ee 9
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Giraanta safayr oo dhan oo safayr ah oo gebi ahaanba laga sameeyay safayr Walax safayr ah oo shaybaar lagu sameeyay oo hufan
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Dahaarka safayr dia 4inj× 80mm Monocrystalline Al2O3 99.999% Keli ah Crystal
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Muraayadaha Sapphire Prism Daahfurnaan sare Al2O3 BK7 JGS1 JGS2 Qalabka indhaha ee Maaddada ah