SOI wafer insulator on silikoon 8-inch iyo 6-inch SOI (Silicon-On-Insulator) wafers

Waferrada SOI ee silikoon 8-inji ah iyo 6-inch SOI

Sharaxaad Gaaban:

Wafer-ka Silicon-On-Insulator (SOI), oo ka kooban saddex lakab oo kala duwan, ayaa u soo ifbaxaya sidii tiir udub dhexaadka u ah mikroelectronics iyo codsiyada inta jeer ee raadiyaha (RF). Mabda'aani waxay sharraxaysaa sifooyinka muhiimka ah iyo codsiyada kala duwan ee substrate-kan cusub.

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Soo bandhigida sanduuqa waferka

Ka kooban lakabka silikoon ee sare, lakabka oksaydhka dahaaran, iyo substrate silikoon hoose, waferka saddexda lakab ee SOI waxa uu bixiyaa faa'iidooyin aan la mid ahayn microelectronics iyo RF domains. Lakabka silikoon ee ugu sarreeya, oo leh silikoon crystalline tayo sare leh, wuxuu fududeeyaa is dhexgalka qaybaha elektiroonigga ah ee adag oo leh sax iyo hufnaan. Lakabka oksaydhka dahaadhka ah, oo si taxadar leh loo farsameeyay si loo yareeyo awoodda dulin, waxay wanaajisaa waxqabadka aaladda iyadoo la yareynayo faragelinta korantada ee aan loo baahnayn. Substrate-ka hoose ee silikoon wuxuu bixiyaa taageero farsamo wuxuuna xaqiijiyaa waafaqid tignoolajiyada farsamaynta silikoon ee jira.

Microelectronics-ka, waferka SOI wuxuu u adeegaa aasaas u ah samaynta wareegyada isku dhafan ee horumarsan (ICs) oo leh xawaare sare, hufnaan koronto, iyo isku hallayn. Nashqaddeeda saddex-lakab ah waxay awood u siinaysaa horumarinta aaladaha isku-dhafan ee isku-dhafan sida CMOS (Complementary Metal-Oxide-Semiconductor) ICs, MEMS (Nidaamka Micro-Electro-Mechanical), iyo aaladaha korantada.

Goobta RF, waferka SOI wuxuu muujinayaa waxqabadka cajiibka ah ee naqshadeynta iyo hirgelinta qalabka RF iyo nidaamyada. Awoodeeda dulineed ee hooseeya, korontada burbursan ee sare, iyo guryaha go'doominta aadka u fiican ayaa ka dhigaya substrate ku habboon furayaasha RF, amplifiers, filtarrada, iyo qaybaha kale ee RF. Intaa waxaa dheer, dulqaadka shucaaca ee dabiiciga ah ee wafer-ka SOI wuxuu ka dhigayaa mid ku habboon hawada hawada iyo codsiyada difaaca halkaasoo isku halaynta jawiga adag ay muhiim tahay.

Intaa waxaa dheer, kala-duwanaanta wafer-ka SOI waxay ku fidsan tahay tignoolajiyada soo ifbaxaya sida wareegyada isku dhafan ee sawir-qaadista (PICs), halkaas oo isku-dhafka qaybaha indhaha iyo elektiroonigga ee hal substrate ay ballan qaadayaan isgaarsiinta jiilka soo socda iyo hababka isgaarsiinta xogta.

Marka la soo koobo, wafer-ka saddexda lakab ee Silicon-On-Insulator (SOI) wuxuu u taagan yahay safka hore ee hal-abuurka microelectronics iyo codsiyada RF. Dhismaheeda gaarka ah iyo sifooyin waxqabad gaar ah ayaa u gogol xaaraya horumarka laga gaarayo warshadaha kala duwan, horumarka wadista iyo qaabaynta mustaqbalka tignoolajiyada.