Silicon Carbide (SiC) Substrate Single-Crystal - 10 × 10mm Wafer

Silicon Carbide (SiC) Substrate Single-Crystal - 10×10mm Sawirka Waferka

Sharaxaad Gaaban:

10 × 10mm Silicon Carbide (SiC) wafer hal-crystal substrate waa walax wax-qabad sare leh oo semiconductor ah oo loogu talagalay korantada soo socota ee elektiroonigga ah iyo codsiyada optoelectronic. Muujinaya dhaqdhaqaaqa kulaylka gaarka ah, bandgap ballaaran, iyo xasilloonida kiimikaad ee heer sare ah, Substrates SiC waxay aasaaska u yihiin aaladaha si hufan ugu shaqeeya heerkul sare, soo noqnoqoshada sare, iyo xaaladaha tamarta sare. Substrate-yadan ayaa si sax ah loo gooyay 10 × 10mm chips labajibaaran, oo ku habboon cilmi-baarista, wax-soo-saarka, iyo samaynta qalabka.

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Jaantuska faahfaahsan ee Silicon Carbide (SiC) wafer substrate ah

Dulmarka Silicon Carbide (SiC) wafer substrate ah

The10×10mm Silicon Carbide (SiC) wafer substrate hal-crystal ahwaa qalab wax-qabad sare leh oo loogu talagalay korantada soo socota ee elektiroonigga ah iyo codsiyada optoelectronic. Muujinaya dhaqdhaqaaqa kulaylka gaarka ah, bandgap ballaaran, iyo xasilloonida kiimikaad aad u wanaagsan, Silicon Carbide (SiC) substrate wafer wuxuu bixiyaa aasaaska aaladaha si hufan ugu shaqeeya heerkul sare, soo noqnoqoshada sare, iyo xaaladaha tamarta sare. Substrate-yadan ayaa si sax ah loo gooyay10 × 10mm chips labajibbaaran, ku habboon cilmi-baarista, wax-soo-saarka, iyo samaynta qalabka.

Mabda'a Wax-soo-saarka ee Silicon Carbide (SiC) wafer substrate ah

Silicon Carbide (SiC) waferka substrate-ka waxaa lagu soo saaraa Gaadiidka Jirka Uumiga (PVT) ama hababka korriinka sareynta. Nidaamku wuxuu ku bilaabmayaa budo SiC nadiif ah oo sarreeya oo lagu shubay qolof garaaf ah. Heerkul aad u daran oo ka badan 2,000°C iyo deegaan la kontoroolo, budada waxay hoos ugu dhacdaa uumiga waxayna dib ugu shubtaa kiristaalka abuur si taxadar leh, samaynta hal galaas oo kiristaalo ah oo la yareeyey.

Marka boule-ka SiC uu koray, waxa uu maraa:

Goynta Ingot: miinshaaro siligga dheemanka ah ee saxda ah ayaa gooyay galka SiC ee maraqa ama jajabyada.

Dhabarka iyo shiididda: Dusha sare waa la simay si looga saaro calaamadaha miinshaar oo loo gaaro dhumuc labis ah.

Polishing makaanik kiimikaad (CMP): Wuxuu gaaraa dhamaystir muraayad u diyaarsan oo leh qallafsanaan aad u hooseeya.

Doping Ikhtiyaar ah: Nitrojiin, aluminium, ama boron doping ayaa la soo bandhigi karaa si loogu habeeyo sifooyinka korantada (n-nooca ama p-nooca).

Kormeerka tayada: Qiyaasta sare waxay hubisaa dulsaarnimada wafer-ka, lebbiska dhumucda, iyo cufnaanta cilladdu waxay buuxisaa shuruudaha heer-sare ee adag.

Habkan tillaabooyinka badan leh waxay keenaysaa 10 × 10mm Silicon Carbide (SiC) substrate wafer chips oo diyaar u ah korriinka epitaxial ama samaynta qalabka tooska ah.

Astaamaha Alaabta Silicon Carbide (SiC) wafer substrate

Waferka substrate Silicon Carbide (SiC) waxa ugu horayn laga sameeyay4H-SiC or 6H-SiCnoocyo badan:

4H-Sic:Waxay muujisaa dhaqdhaqaaqa elektarooniga ah ee sarreeya, taasoo ka dhigaysa mid ku habboon aaladaha korantada sida MOSFETs iyo Schottky diodes.
6H-Sic:Waxay siisaa sifooyin gaar ah RF iyo qaybaha indhaha.

Waxyaabaha muhiimka ah ee jirka ee Silicon Carbide (SiC) wafer substrate:

Barxad ballaadhan:~ 3.26 eV (4H-SiC) - waxay u suurtagelisaa koronto jaban oo sarreeya iyo khasaaraha beddelka hooseeya.
Dhaqdhaqaaqa kulaylka:3-4.9 W / cm · K - waxay u daadisaa kuleylka si wax ku ool ah, hubinta xasilloonida nidaamyada awoodda sare leh.
Adag:~ 9.2 ee miisaanka Mohs - waxay hubisaa cimri dhererka farsamada inta lagu jiro farsamaynta iyo hawlgalka qalabka.

Codsiyada Silicon Carbide (SiC) wafer substrate ah

Kala-duwanaanta ee Silicon Carbide (SiC) wafer substrate waxay ka dhigtaa kuwo qiimo leh oo dhan warshado badan:

Korantada Korontada: Saldhigga MOSFETs, IGBTs, iyo Schottky diodes ee loo isticmaalo baabuurta korantada (EVs), sahayda tamarta warshadaha, iyo rogayaasha tamarta la cusboonaysiin karo.

RF & Aaladaha Microwave: Waxay taageertaa transistors, amplifiers, iyo qaybaha radar ee 5G, satalaytka, iyo codsiyada difaaca.

Optoelectronics: Waxaa loo isticmaalaa LED-yada UV, sawir-qaadayaasha, iyo diode-yada laysarka halkaasoo daah-furnaanta UV sare iyo xasillooni ay muhiim u tahay.

Aerospace & Difaaca: Substrate-ka lagu kalsoonaan karo ee heerkulka sare, qalabka elektarooniga ah ee shucaaca adag.

Machadyada Cilmi-baarista & Jaamacadaha: Waxay ku habboon tahay daraasadaha sayniska maadiga ah, horumarinta aaladaha tusaalaha ah, iyo tijaabinta hababka epitaxial ee cusub.

Tilmaamaha Silicon Carbide (SiC) ee Chips wafer substrate

Hanti	Qiimaha
Cabbirka	10mm × 10mm laba jibaaran
Dhumucda	330-500 μm (la beddeli karo)
Noocyo badan	4H-SiC ama 6H-SiC
Hanuuninta	C-diyaarad, dhidibka ka baxsan (0°/4°)
Dhamaystir dusha sare	Hal dhinac ama laba-dhinac ah oo la safeeyey; Epi-diyaar la heli karo
Ikhtiyaarada Doping	N-nooca ama P-nooca
Darajo	Darajada cilmi baarista ama darajada qalabka

FAQ ee Silicon Carbide (SiC) wafer substrate

Q1: Maxaa ka dhigaya substrate Silicon Carbide (SiC) wafer ka sarreeya maraqa silikoon ee dhaqameed?
SiC waxay bixisaa 10 × xoogga sare ee burburka goobta, iska caabbinta kulaylka sarreeya, iyo khasaaraha beddelka hooseeya, taas oo ka dhigaysa mid ku habboon waxtarka sare, qalabka awoodda sare leh oo aan silikoon taageeri karin.

Q2: 10 × 10mm Silicon Carbide (SiC) wafer substrate ma la siin karaa lakabyo epitaxial?
Haa Waxaan bixinaa substrate-ka diyaarsan waxaanan ku gaarsiin karnaa wafers leh lakabyo epitaxial caadadii si ay u daboolaan aaladaha korantada gaarka ah ama baahiyaha wax soo saarka LED.

Q3: Ma jiraan cabbirro gaar ah iyo heerarka doping?
Dhab ahaantii. Halka 10 × 10mm chips ay yihiin halbeeg loogu talagalay cilmi-baarista iyo muunaynta aaladda, cabbirrada caadada ah, dhumucdooda, iyo astaamaha doping-ka ayaa la heli karaa marka la codsado.

Q4: Intee bay u adkaysanayaan waferradan deegaan aad u daran?
SiC waxay ilaalisaa daacadnimada qaabdhismeedka iyo waxqabadka korantada ee ka sarreeya 600°C iyo hoos shucaaca sare, taas oo ka dhigaysa mid ku habboon hawada hawada iyo qalabka elektiroonigga ah ee heerka militariga.

Annaga

XKH waxay ku takhasustay horumarinta tignoolajiyada sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee crystal. Badeecadahayadu waxay u adeegaan qalabka elektarooniga ah, elektiroonigga macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadda taleefanka gacanta, Ceramics, LT, Silicon Carbide SIC, Quartz, iyo maraqyada crystal semiconductor. Iyada oo leh khibrad xirfad leh iyo qalab-goynta, waxaan ku fiicanahay habaynta badeecada aan caadiga ahayn, annagoo higsanayna inaan noqono hormuudka agabka optoelectronic shirkad farsamo sare leh.