Substrate-ka Hal-Kiristaal ah ee Silicon Carbide (SiC) – 10×10mm Wafer

Substrate-ka Silicon Carbide (SiC) Hal-Kiristaal ah – 10×10mm Wafer Sawir Gaar ah

Sharaxaad Gaaban:

Wafer-ka hal-kristaalka ah ee Silicon Carbide (SiC) ee 10×10mm waa walax semiconductor ah oo waxqabad sare leh oo loogu talagalay elektaroonigga korontada ee jiilka soo socda iyo codsiyada optoelectronic. Iyada oo leh hab-dhaqan kuleyl oo heer sare ah, band-gaaban ballaaran, iyo xasillooni kiimiko oo aad u fiican, substrate-yada SiC waxay bixiyaan aasaaska aaladaha si hufan u shaqeeya xaaladaha heerkulka sare, soo noqnoqoshada sare, iyo danab sare. Substrate-yadan waxaa si sax ah loogu jarjaray jajabyo laba jibbaaran oo 10×10mm ah, oo ku habboon cilmi-baarista, tijaabinta, iyo sameynta qalabka.

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Astaamaha

Jaantuska Faahfaahsan ee Wafer-ka Substrate-ka ee Silicon Carbide (SiC)

Dulmar guud oo ku saabsan wafer-ka Silicon Carbide (SiC) ee substrate-ka

TheWafer hal-kiristaal ah oo 10×10mm ah oo Silicon Carbide (SiC) ahwaa walax semiconductor ah oo waxqabad sare leh oo loogu talagalay elektarooniga korontada ee jiilka soo socda iyo codsiyada optoelectronic. Iyada oo leh hab-dhaqan kuleyl oo heer sare ah, farqiga ballaaran, iyo xasilloonida kiimikada ee aadka u fiican, wafer-ka substrate-ka Silicon Carbide (SiC) wuxuu bixiyaa aasaaska aaladaha si hufan u shaqeeya xaaladaha heerkulka sare, soo noqnoqoshada sare, iyo danab sare. Substrate-yadan waxaa loo gooyay si sax ah.10 × 10mm jajab laba jibbaaran, oo ku habboon cilmi-baarista, tijaabinta, iyo sameynta qalabka.

Mabda'a Wax Soo Saarka ee wafer-ka substrate-ka ee Silicon Carbide (SiC)

Wafer-ka substrate-ka ee Silicon Carbide (SiC) waxaa lagu soo saaraa iyadoo loo marayo hababka koritaanka uumiga jirka (PVT) ama hababka korriinka sublimation. Hawshu waxay ku bilaabataa budada SiC oo saafi ah oo lagu shubay graphite crucible. Heerkulka aadka u daran ee ka sarreeya 2,000°C iyo jawi la xakameeyey, budada waxay u gudubtaa uumiga waxayna dib ugu shubtaa kiristaal abuurka ah oo si taxaddar leh loogu jiheeyey, iyadoo sameysanaysa kiristaal keli ah oo weyn oo cilladaysan.

Marka SiC boule la koro, waxay martaa:

Goynta Ingot: Miinshaar silig dheeman ah ayaa ingot-ka SiC u jarjara wafers ama jajabyo.

Daba-rogidda iyo shiididda: Dusha sare waa la siman yahay si looga saaro calaamadaha miinshaarta loona gaaro dhumuc isku mid ah.

Nadiifinta Farsamada Kiimikada (CMP): Waxay gaartaa dhammaystir muraayad diyaar ah oo leh qallafsanaan aad u hooseeya oo dusha sare ah.

Doping ikhtiyaari ah: Doping-ka Nitrogen, aluminium, ama boron ayaa la soo bandhigi karaa si loo habeeyo sifooyinka korantada (nooca n-ama nooca p).

Kormeerka Tayada: Cabbirka heerka sare wuxuu hubiyaa in simanaanta wafer-ka, isku-midnaanta dhumucda, iyo cufnaanta cilladaha ay buuxiyaan shuruudaha heerka semiconductor-ka ee adag.

Habkan oo leh dhowr tallaabo wuxuu keenayaa jajabyo wafer ah oo 10×10mm Silicon Carbide (SiC) ah oo adag oo diyaar u ah koritaanka epitaxial ama sameynta qalabka tooska ah.

Astaamaha Maaddada ee wafer-ka substrate-ka ee Silicon Carbide (SiC)

Wafer-ka substrate-ka ee Silicon Carbide (SiC) waxaa inta badan laga sameeyaa laga bilaabo 1 ilaa 124H-SiC or 6H-SiCnoocyo badan:

4H-SiC:Waxay leedahay dhaqdhaqaaq elektaroonig ah oo sarreeya, taasoo ka dhigaysa mid ku habboon aaladaha korontada sida MOSFETs iyo diode-yada Schottky.
6H-SiC:Waxay bixisaa sifooyin gaar ah oo loogu talagalay qaybaha RF iyo optoelectronic.

Astaamaha muhiimka ah ee fiisikiska ee wafer-ka Silicon Carbide (SiC):

Farqiga ballaaran:~3.26 eV (4H-SiC) – waxay suurtogal ka dhigaysaa danab burbur sare iyo khasaarooyin beddelasho oo hooseeya.
Gudbinta kulaylka:3–4.9 W/cm·K – si wax ku ool ah ayuu u kala firdhiyaa kulaylka, isagoo hubinaya xasilloonida nidaamyada awoodda sare leh.
Adkaanta:~9.2 miisaanka Mohs - wuxuu hubiyaa adkeysi farsamo inta lagu jiro farsamaynta iyo hawlgalka qalabka.

Adeegsiga wafer-ka Silicon Carbide (SiC) ee substrate-ka ah

Kala duwanaanta wafer-ka Silicon Carbide (SiC) ee substrate-ka ayaa ka dhigaysa mid qiimo leh warshado badan:

Elektarooniga Korontada: Saldhigga MOSFET-yada, IGBT-yada, iyo diode-yada Schottky ee loo isticmaalo gawaarida korontada ku shaqeeya (EVs), sahayda korontada warshadaha, iyo kuwa tamarta dib loo cusboonaysiin karo.

Qalabka RF & Microwave: Waxay taageertaa transistors-ka, cod-weyneeyayaasha, iyo qaybaha radar-ka ee 5G, dayax-gacmeedka, iyo codsiyada difaaca.

Optoelectronics: Waxaa loo isticmaalaa nalalka UV-ga, nalalka sawir-qaadayaasha, iyo nalalka laysarka halkaas oo hufnaanta sare ee UV-ga iyo xasilloonida ay muhiim yihiin.

Hawada Sare & Difaaca: Substrate lagu kalsoonaan karo oo loogu talagalay elektarooniga heerkulka sare leh, ee shucaaca adag.

Hay'adaha Cilmi-baarista iyo Jaamacadaha: Ku habboon daraasadaha sayniska agabka, horumarinta qalabka tijaabada ah, iyo tijaabinta hababka cusub ee epitaxial.

Tilmaamaha Jajabyada wafer-ka ee Silicon Carbide (SiC) ee substrate-ka

Hantida	Qiimaha
Cabbirka	10mm × 10mm laba jibbaaran
Dhumucda	330–500 μm (la habeyn karo)
Nooc polytype ah	4H-SiC ama 6H-SiC
Jihaynta	C-diyaarad, dhidibka ka baxsan (0°/4°)
Dhammaadka Dusha Sare	Hal dhinac ama laba dhinac oo la safeeyey; epi-ready ayaa diyaar ah
Ikhtiyaarada Doping-ka	Nooca N ama Nooca P
Fasal	Darajada cilmi-baarista ama darajada qalabka

Su'aalaha Inta Badan La Isweydiiyo ee ku saabsan Silicon Carbide (SiC) substrate wafer

S1: Maxaa ka dhigaya waferka substrate-ka Silicon Carbide (SiC) mid ka sarreeya waferka silicon-ka ee dhaqameed?
SiC waxay bixisaa 10× xoog sare oo goobta burburka ah, iska caabin kuleyl oo heer sare ah, iyo khasaarooyin beddelaad oo hooseeya, taasoo ka dhigaysa mid ku habboon aaladaha waxtarka sare leh, ee awoodda sare leh ee silicon uusan taageeri karin.

S2: Ma la siin karaa wafer-ka 10×10mm ee Silicon Carbide (SiC) oo leh lakab epitaxial ah?
Haa. Waxaan bixinaa substrate-ka diyaarsan ee epi-ready waxaana keeni karnaa buskudyo leh lakab epitaxial gaar ah si loo daboolo qalabka korontada gaarka ah ama baahiyaha wax soo saarka LED-ka.

S3: Cabbirrada gaarka ah iyo heerarka daawada ma la heli karaa?
Dabcan. In kasta oo jajabyada 10×10mm ay yihiin kuwo caadi ah oo loogu talagalay cilmi-baarista iyo muunadda qalabka, cabbirrada gaarka ah, dhumucda, iyo astaamaha doping-ka ayaa la heli karaa marka la codsado.

S4: Sidee bay u adkeysan karaan wafer-yadan jawiyada aadka u daran?
SiC waxay ilaalisaa hufnaanta qaab-dhismeedka iyo waxqabadka korontada oo ka sarreeya 600°C iyo shucaaca sare, taasoo ka dhigaysa mid ku habboon qalabka elektaroonigga ah ee hawada sare iyo kuwa militariga.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.