Silicon carbide iska caabin dheer foornada crystal koraya 6/8/12 inch SiC ingot crystal PVT

Sharaxaad Gaaban:

Foornada koritaanka iska caabbinta Silicon carbide (Habka PVT, habka wareejinta uumiga jirka) waa qalab muhiim u ah koritaanka silicon carbide (SiC) hal crystal by mabda'a heer-kulka sare sublimation-recrystalization. Tiknoolajiyadu waxay isticmaashaa kuleyliyaha iska caabinta (jirka kuleyliyaha graphite) si ay u hoos dhigto alaabta ceeriin ee SiC heerkul sare oo ah 2000 ~ 2500 ℃, iyo dib u soo celinta gobolka heerkulka hooseeya (abuurka abuur) si loo sameeyo tayada sare ee SiC hal crystal (4H / 6H-SiC). Habka PVT waa habka caadiga ah ee wax soo saarka ballaaran ee SiC substrates ee 6 inji iyo ka hooseeya, kaas oo si weyn loogu isticmaalo diyaarinta substrate-ka ee semiconductors (sida MOSFETs, SBD) iyo aaladaha soo noqnoqda raadiyaha (GaN-on-SiC).

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Faahfaahinta Alaabta

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Mabda'a shaqada:

1. Culayska alaabta ceeriin: nadiifinta sare ee SiC budada (ama block) oo lagu dhejiyay gunta hoose ee garaafyada garaafka (aagga heerkulka sare).

2. Vacuum/inter environment: faakiyum qolka foornada (<10⁻³ mbar) ama dhaaf gaaska aan shaqaynayn (Ar).

3. Sublimation heerkulka sare: kululaynta iska caabin ah 2000 ~ 2500 ℃, SiC dami galay Si, Si₂C, SiC₂ iyo qaybaha kale ee wajiga gaaska.

4. gudbinta wajiga gaaska: heerkulku wuxuu wadaa fidinta walxaha wajiga gaaska ilaa heerkul hoose (dhamaadka abuurka).

5. Koritaanka Crystal: Marxaladda gaasku waxay dib ugu noqotaa dusha sare ee Crystal Seed waxayna u koraan jihada jihada ee dhidibada C-ama A-axis.

Halbeegyada muhiimka ah:

1. Heerkulka gradient: 20 ~ 50 ℃ / cm (xakamaynta heerka koritaanka iyo cufnaanta cilladda).

2. Cadaadiska: 1 ~ 100mbar (cadaadiska hoose si loo yareeyo isku-darka wasakhda).

3. Heerka kobaca: 0.1 ~ 1mm / h (oo saameeya tayada crystal iyo waxtarka wax soo saarka).

Tilmaamaha ugu muhiimsan:

(1) Tayada crystal
Cufnaanta cilladda yar: cufnaanta microtubule <1 cm⁻², cufnaanta kala-baxa 10³ ~ 10⁴ cm⁻² (iyada oo loo marayo tayaynta abuurka iyo xakamaynta habka).

Xakamaynta nooca Polycrystalline: waxay kori kartaa 4H-SiC (guud ahaan), 6H-SiC, 4H-SiC saamiga> 90% (waxay u baahan yihiin in si sax ah loo xakameeyo heerkulbeegga heerkulbeegga iyo heerka gaaska heerka stoichiometric).

(2) Waxqabadka qalabka
Dejinta heerkulka sare: garaafyada kuleylinta heerkulka jidhka>2500 ℃, jidhka foornada wuxuu qaataa naqshadaynta lakabyo badan (sida graphite dareemay + jaakad biyo qabow leh).

Xakamaynta midaysan: Isbeddellada heerkulka axial/radial ee ± 5 ° C waxay hubisaa joogteynta dhexroorka crystal (6-inch dhumucdiisuna waxay ka leexanaysaa <5%).

Degree of automation: Isku-dhafka nidaamka xakamaynta PLC, la socodka wakhtiga dhabta ah ee heerkulka, cadaadiska iyo heerka kobaca.

(3) Faa'iidooyinka farsamada
Isticmaalka alaabta sare: heerka beddelka alaabta ceeriin>70% (ka fiican habka CVD).

Waafaqid cabbirka weyn: 6-inji wax-soo-saar ballaaran ayaa la gaaray, 8-inch ayaa ku jirta marxaladda horumarinta.

(4) Isticmaalka tamarta iyo qiimaha
Isticmaalka tamarta hal foorno waa 300 ~ 800kW · h, oo xisaabinaya 40% ~ 60% qiimaha wax soo saarka ee SiC substrate.

Maalgelinta qalabku aad ayuu u sarreeyaa (1.5M 3M cutubkiiba), laakiin qiimaha substrate-ka cutubku wuu ka hooseeyaa habka CVD.

Codsiyada muhiimka ah:

1. Korontada elektiroonigga ah: Substrate-ka SiC MOSFET ee beddelka gawaadhida korantada iyo beddelka sawir-qaadaha

2. Qalabka Rf: Saldhigga 5G ee GaN-on-SiC epitaxial substrate (badanaa 4H-SiC).

3. Qalabka deegaanka ee aadka u daran: heerkulka sare iyo dareemayaasha cadaadiska sare ee hawada iyo qalabka tamarta nukliyeerka.

Qiyaasaha farsamada

Tilmaamid	Faahfaahin
Cabirka (L × W × H)	2500 × 2400 × 3456 mm ama habee
Dhexroor Crucible	900 mm
Cadaadiska Vacuum ee ugu dambeeya	6 × 10⁻ Pa (ka dib 1.5 saacadood oo faaruq ah)
Heerka daadinta	≤5 Pa/12saac (dubi)
Dhexroorka usheeda dhexe	50 mm
Xawaaraha wareega	0.5-5 rpm
Habka Kululaynta	Kuleylinta iska caabinta korontada
Heerkulka Foornada ugu badan	2500°C
Awood kuleyliyaha	40 kW × 2 × 20 kW
Cabbirka Heerkulka	pyrometer infrared-midab leh
Kala duwanaanta heerkulka	900-3000°C
Saxnaanta heerkulka	±1°C
Xaddiga Cadaadiska	1-700 mbar
Saxnaanta Xakamaynta Cadaadiska	1-10 mbar: ± 0.5% FS; 10-100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS
Nooca Hawlgalka	Soo dejinta hoose, xulashooyinka badbaadada gacanta/otomaatiga ah
Tilmaamaha Ikhtiyaarka	Cabbirka heerkulka laba-geesoodka ah, aagagga kuleylka badan

Adeegyada XKH:

XKH waxay bixisaa adeegga nidaamka oo dhan ee foornada SiC PVT, oo ay ku jiraan habeynta qalabka (naqshad heerkulbeeg ah, xakameyn toos ah), horumarinta habka (xakamaynta qaabka crystal, hagaajinta cilladda), tababarka farsamada (shaqeynta iyo dayactirka) iyo taageerada iibka ka dib (beddelka qaybaha graphite, hagaajinta goobta kulaylka) si loo caawiyo macaamiisha inay gaaraan wax soo saarka sic crystal mass tayo sare leh. Waxaan sidoo kale bixinaa adeegyada cusboonaysiinta habsocodka si aan si joogto ah u wanaajino wax-soo-saarka crystal iyo hufnaanta korriinka, oo leh wakhtiga hogaanka caadiga ah ee 3-6 bilood.