Mashiinka goynta siliga dheeman carbide 4/6/8/12 inch SiC ingot processing

Mashiinka goynta fiilada dheeman ee Silicon carbide 4/6/8/12 inch SiC ingot processing Image Featured

Sharaxaad Gaaban:

Mashiinka goynta Silicon carbide Diamond Wire waa nooc ka mid ah qalabka wax lagu sameeyo ee saxda ah ee loogu talagalay silikoon carbide (SiC) jeex jeexjeex ah, iyadoo la adeegsanayo tikniyoolajiyadda Diamond Wire Saw, iyada oo loo marayo silig dheeman ah oo xawaare sare leh (dhexroor xariiqda 0.1 ~ 0.3mm) ilaa SiC goynta fiilooyinka badan, si loo gaaro saxsan sare, diyaargarowga wafer-yar ee waxyeelada leh. Qalabka waxaa si weyn loogu isticmaalaa SiC power semiconductor (MOSFET/SBD), aaladda soo noqnoqda raadiyaha (GaN-on-SiC) iyo farsamaynta substrate aaladda optoelectronic, waa qalabka muhiimka ah ee silsiladda warshadaha SiC.

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Faahfaahinta Alaabta

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Mabda'a shaqada:

1. Ingot hagaajinta: SiC ingot (4H / 6H-SiC) ayaa lagu dhejiyaa goynta goynta iyada oo loo marayo qalabka si loo hubiyo saxnaanta booska (± 0.02mm).

2. Dhaqdhaqaaqa xariiqda dheeman: xariiqda dheeman (xawaare dheeman koronto ah oo dusha sare ah) waxaa dhaqaajiya nidaamka taayirrada hagaha ee wareegga xawaaraha sare (xawaaraha xariiqda 10 ~ 30m / s).

3. Goynta quudinta: ingot-ka waxaa lagu quudiyaa jihada loo dejiyay, iyo xariiqda dheemanka ayaa la gooyaa isku mar iyadoo la raacayo xariiqyo badan oo barbar socda (100 ~ 500 xariiq) si loo sameeyo wafers badan.

4. Qaboojinta iyo ka saarista jajabka: Ku buufi qaboojiyaha (biyaha fuuq-baxay + waxyaabaha lagu daro) ee aagga goynta si loo yareeyo waxyeelada kulaylka loogana saaro jajabyada.

Halbeegyada muhiimka ah:

1. Xawaaraha jarista: 0.2 ~ 1.0mm / min (waxay kuxirantahay jihada crystal iyo dhumucda SiC).

2. Xiisadda khadka: 20 ~ 50N (aad u sarreeya oo sahlan in la jebiyo line, aad u hooseeya waxay saameyn ku yeelataa saxnaanta goynta).

Dhumucda 3.Wafer: heerka 350 ~ 500μm, wafer wuxuu gaari karaa 100μm.

Tilmaamaha ugu muhiimsan:

(1) Saxnaanta goynta
Dulqaadka dhumucda: ± 5μm (@350μm wafer), oo ka fiican goynta hoobiyeyaasha caadiga ah (± 20μm).

Qalafsanaanta dusha sare: Ra <0.5μm (ma jirto wax shiidis dheeraad ah oo loo baahan yahay si loo yareeyo qadarka habaynta dambe).

Bogga Wareejinta: <10μm (Yaree dhibka polishingka xiga).

(2) Waxtarka hab-socodka
Goynta khadadka badan: jarida 100 ~ 500 xabbadood markiiba, kordhinta awoodda wax soo saarka 3 ~ 5 jeer (vs. gooyn hal line).

Nolosha khadka: Khadka dheemanka wuxuu gooyn karaa 100 ~ 300km SiC (waxay kuxirantahay adkaanta qallafsanaanta iyo hagaajinta habka).

(3) Habaynta dhaawaca hoose
Jebinta cidhifyada: <15μm (goyn dhaqameed> 50μm), hagaaji dhalidda waferka.

Lakabka waxyeelada dhulka hoostiisa: <5μm (yaree saarista dhalaalka).

(4) Ilaalinta deegaanka iyo dhaqaalaha
Wax wasakh ah ma laha hoobiye: Kharashka daadinta dareeraha qashinka oo yaraaday marka loo eego goynta hoobiyeyaasha.

Ka faa'iidaysiga agabka: Goynta khasaaraha <100μm/ jarid, badbaadinta alaabta ceeriin ee SiC.

Saamaynta goynta:

1. Tayada wafer: ma jiraan dildilaacyo macroscopic ah oogada, cilladaha yaryar ee yar yar (kordhinta kala-baxa la xakameyn karo). Waxay si toos ah u geli kartaa isku xirka dhalaalaynta qallafsan, gaabin socodka socodka.

2. Joogteynta: leexashada dhumucda wafer ee dufcadda waa <± 3%, oo ku habboon wax soo saarka otomaatiga ah.

3.Applicability: Taageerada 4H / 6H-SiC ingot goynta, oo ku habboon nooca korantada / semi-dahaaran.

Tilmaamaha farsamada:

Tilmaamid	Faahfaahin
Cabirka (L × W × H)	2500x2300x2500 ama habee
Cabbirka agabka farsamaynta	4, 6, 8, 10, 12 inch of silicon carbide
Dusha oo qallafsan	Ra≤0.3u
Celceliska xawaaraha goynta	0.3mm/min
Miisaanka	5.5t
Goynta habraaca habaynta talaabooyinka	≤30 tallaabo
Sawaxanka qalabka	≤80 dB
Xiisadda siliga birta	0 ~ 110N (0.25 xiisadda siligga waa 45N)
Xawaaraha siliga birta	0 ~ 30m/S
Awoodda guud	50kw
Dhexroorka siliga dheeman	≥0.18mm
Dhammaadka flatness	≤0.05mm
Goynta iyo jabinta heerka	≤1% (marka laga reebo sababaha bini'aadamka, maaddada silikon, line, dayactirka iyo sababo kale)

Adeegyada XKH:

XKH waxay bixisaa adeegga nidaamka oo dhan ee mashiinka goynta dheeman ee silicon carbide, oo ay ku jiraan xulashada qalabka (dhexroorka fiilada / xawaaraha isku dhafka), horumarinta habka (goynta hagaajinta cabbirka), sahayda alaabta (silig dheeman, wheel guide) iyo taageerada iibka ka dib ( dayactirka qalabka, goynta falanqaynta tayada), si loo caawiyo macaamiisha inay gaaraan wax-soo-saarka sare (> 95%), qiimo jaban SiC wax soo saarka mass wafer. Waxa kale oo ay bixisaa casriyeyn la habeeyey (sida jarista aadka u khafiifka ah, rarista otomaatiga ah iyo dejinta) oo leh 4-8 toddobaad wakhtiga hogaanka ah.