Baakad Cantilever ah oo Silicon Carbide ah (SiC Cantilever Paddle)

Sawirka Soo-bandhigay ee Silicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

Sharaxaad Gaaban:

Noo soo dir emayl

Astaamaha

Jaantus Faahfaahsan

Dulmar Guud oo ku saabsan Badeecada

Baaldiga cantilever-ka ee silikoon carbide, oo laga sameeyay carbide silicon ah oo leh falgal sare (RBSiC), waa qayb muhiim ah oo loo isticmaalo nidaamyada rarista iyo maaraynta wafer-ka ee codsiyada semiconductor-ka iyo photovoltaic.
Marka la barbardhigo paddles-ka quartz ama graphite-ka dhaqameed, paddles-ka SiC cantilever waxay bixiyaan xoog farsamo oo heer sare ah, adkeysi sare, ballaarinta kulaylka oo hooseeya, iyo iska caabin daxaleed oo heer sare ah. Waxay ilaaliyaan xasillooni qaab-dhismeed aad u fiican heerkulka sare, iyagoo buuxinaya shuruudaha adag ee cabbirka wafer-ka weyn, cimriga adeegga oo la dheereeyey, iyo wasakhowga aadka u hooseeya.

Iyadoo la horumarinayo sii socoshada hababka semiconductor-ka ee u jeeda dhexroorka wafer-ka weyn, wax-soo-saarka sare, iyo jawi farsamayn oo nadiif ah, baaldiyada cantilever-ka SiC ayaa si tartiib tartiib ah u beddelay agabka caadiga ah, iyagoo noqday doorashada la doorbiday ee foornooyinka faafinta, LPCVD, iyo qalabka heerkulka sare ee la xiriira.

Tilmaamaha Badeecada

Xasillooni Heerkul Sare oo Heer Sare ah
- Si kalsooni leh ayuu ugu shaqeeyaa 1000-1300℃ iyada oo aan lahayn qaab-dhismeed.
- Heerkulka ugu badan ee adeegga ilaa 1380℃.
Awood Sare oo Qaadista Culayska
- Xoogga laabashada ilaa 250–280 MPa, aad ayuu uga sarreeyaa baaldiyada quartz.
- Awood u leh inuu maareeyo wafers dhexroor weyn leh (300 mm iyo wixii ka sareeya).
Adeeg Dheeraad ah Cimrigiisa & Dayactirka Hoose
- Isku-darka ballaarinta kulaylka oo hooseeya (4.5 × 10⁻⁶ K⁻¹), si fiican ayuu ula jaanqaaday agabka dahaarka LPCVD.
- Waxay yareysaa dildilaaca iyo qolofta ay keento cadaadiska, taasoo si weyn u kordhineysa wareegyada nadiifinta iyo dayactirka.
Iska caabbinta Daxalka iyo Nadiifnimada
- Iska caabin fiican u leh asiidhyada iyo alkalis.
- Qaab-dhismeedka yar yar oo cufan oo leh dalool furan <0.1%, taasoo yaraynaysa soo saarista walxaha iyo sii deynta wasakhda.
Naqshad Is-waafajinaysa Otomaatig
- Joomatari isdhaafsi oo deggan oo leh saxnaan cabbir sare leh.
- Si aan kala go 'lahayn ayuu ula midoobaa nidaamyada rarista iyo dejinta wafer-ka robotic-ga ah, taasoo suurtogalinaysa wax soo saar si buuxda otomaatig ah.

Sifooyinka Jirka iyo Kiimikada

Shay	Cutubka	Xogta
Heerkulka Adeegga ugu Badan	℃	1380
Cufnaanta	g/cm³	3.04 – 3.08
Fosfooraska Furan	%	< 0.1
Xoog Laabista	MPA	250 (20℃), 280 (1200℃)
Modulus of Lalabnimo	GPA	330 (20℃), 300 (1200℃)
Qaboojinta Kulaylka	W/m·K	45 (1200℃)
Isugeynta Ballaarinta Kulaylka	K⁻¹×10⁻⁶	4.5
Adkaanshaha Vickers	HV2	≥ 2100
Iska caabbinta Aashitada/Alkaline	-	Aad u fiican

Dhererka caadiga ah:2378 mm, 2550 mm, 2660 mm
Cabbirrada gaarka ah ayaa la heli karaa marka la codsado

Codsiyada

Warshadaha Semiconductor-ka
- LPCVD (Qaybinta Uumiga Kiimikada ee Cadaadiska Hoose)
- Geedi socodka faafinta (fosfooraska, boron, iwm.)
- Oksaydhaynta kulaylka
Warshadaha Foornada
- Faafinta iyo dahaarka Polysilicon iyo monocrystalline wafer
- Qaboojinta heerkulka sare iyo passivation
Goobaha Kale
- Deegaannada daxalka leh ee heerkulka sare leh
- Nidaamyada maaraynta wafer-ka saxda ah ee u baahan cimri dheer iyo wasakheyn yar

Faa'iidooyinka Macaamiisha

Kharashyada Hawlgalka oo La Dhimay- Cimri dheer marka la barbar dhigo baaldiyada quartz, iyadoo la yareynayo waqtiga shaqada oo la joojiyo iyo inta jeer ee la beddelo.
Wax-soo-saar Sare- Wasakhowga aadka u hooseeya wuxuu hubiyaa nadaafadda dusha sare ee wafer-ka wuxuuna yareeyaa heerka cilladaha.
Mustaqbalka Caddeyn- La jaan qaadaya cabbirrada waaweyn ee wafer-ka iyo hababka semiconductor-ka ee jiilka soo socda.
Wax soo saar la Hagaajiyay- Si buuxda ula jaanqaadi kara nidaamyada otomaatiga robot-ka, iyagoo taageeraya wax soo saarka mugga sare leh.

Su'aalaha Inta Badan La Isweydiiyo - Baakad Silikoon Carbide Cantilever ah

S1: Waa maxay qalabka wax lagu shubo ee silikoon carbide?
J: Waa qayb taageero iyo maarayn ah oo laga sameeyay carbide silicon ah oo ku xidhan falcelinta (RBSiC). Waxaa si weyn loogu isticmaalaa foornooyinka faafinta, LPCVD, iyo hababka kale ee semiconductor-ka heerkulka sare leh iyo photovoltaic.

S2: Maxaad SiC uga dooran lahayd paddles-ka quartz?
A: Marka la barbardhigo paddles-ka quartz, paddles-ka SiC waxay bixiyaan:

Awood farsamo oo sare iyo awood culays-qaadis
Xasillooni kuleyl oo ka wanaagsan heerkulka ilaa 1380℃
Nolol adeeg oo aad u dheer iyo wareegyo dayactir oo yaraaday
Khatarta wasakheynta walxaha yaryar iyo soo saarista walxaha yaryar
U hoggaansanaanta cabbirrada waaweyn ee wafer-ka (300 mm iyo wixii ka sarreeya)

S3: Cabbirrada wafer noocee ah ayaa SiC cantilever-ku taageeri karaa?
J: Baaldiyada caadiga ah waxaa loo heli karaa nidaamyada foornada ee 2378 mm, 2550 mm, iyo 2660 mm. Cabbirrada la habeeyey ayaa diyaar u ah inay taageeraan buskudka ilaa 300 mm iyo wixii ka dambeeya.

Nagu Saabsan

XKH waxay ku takhasustay horumarinta tiknoolajiyadda sare, wax soo saarka, iyo iibinta muraayadaha indhaha ee gaarka ah iyo agabka cusub ee kiristaalka. Badeecadahayagu waxay u adeegaan qalabka elektaroonigga ah ee indhaha, qalabka elektaroonigga ah ee macaamiisha, iyo militariga. Waxaan bixinaa qaybaha indhaha ee Sapphire, daboolka muraayadaha taleefanka gacanta, dhoobada, LT, Silicon Carbide SIC, Quartz, iyo wafers kiristaal semiconductor ah. Iyada oo leh khibrad xirfadeed iyo qalab casri ah, waxaan ku fiicanahay habaynta wax soo saarka aan caadiga ahayn, annagoo higsanayna inaan noqono shirkad hormuud u ah qalabka optoelectronic-ka ee tiknoolajiyada sare.