Substrate SiC P iyo D darajo Dia50mm 4H-N 2inch

Substrate-ka SiC P iyo D darajo Dia50mm 4H-N 2inch Sawirka sifaysan

Sharaxaad Gaaban:

Silicon carbide (SiC) waa isku dhafka laba-geesoodka ah ee kooxda IV-IV, waa walxo semiconductor ah.oo ka kooban silikoon saafi ah iyo kaarboon saafi ah. Nitrojiinka ama fosfooraska ayaa lagu shubi karaa SIC si ay u sameeyaan semiconductors-nooca n, ama beryllium, aluminium, ama gallium ayaa lagu shubi karaa si loo abuuro nooca p-seconductors. Waxay ku faantaa dhaqdhaqaaqa kulaylka sare, dhaqdhaqaaqa elektaroonigga sare, korantada burburka sare, xasilloonida kiimikada, iyo iswaafajinta, hubinta maaraynta kulaylka hufan, kor u qaadida isku halaynta aaladda iyo waxqabadka, awood u yeelashada xawaaraha sare ee elektiroonigga ah ee ku habboon codsiyada soo noqnoqda sare, iyo ilaalinta waxqabadka xaaladaha daran si loo kordhiyo cimriga aaladda.

Email noogu soo dir

Faahfaahinta Alaabta

Tags Product

Tilmaamaha ugu muhiimsan ee 2inch SiC mosfet wafers waa sida soo socota;.

Dhaqdhaqaaqa Kulaylka Sare: Waxay xaqiijisaa maaraynta kulaylka hufan, kor u qaadida isku halaynta qalabka iyo waxqabadka

Dhaqdhaqaaqa Sare ee Electron: Waxa uu suurtageliyaa beddelka elektarooniga ah ee xawaaraha sarreeya, oo ku habboon codsiyada soo noqnoqda

Degganaanshaha Kiimikada: Waxay ku ilaalisaa waxqabadka xaaladaha ba'an ee cimriga aaladda

Waafaqid: La jaanqaadi kara is dhexgalka semiconductor ee jira iyo wax soo saarka ballaaran

2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers ayaa si weyn loogu isticmaalaa meelaha soo socda: modules korantada baabuurta korantada, bixinta nidaam tamarta deggan oo hufan, rogayaasha cadaawayaasha nidaamka tamarta la cusboonaysiin karo, hagaajinta maamulka tamarta iyo hufnaanta beddelka,

Waferka SiC iyo waferka Epi-lakabka ee satalaytka iyo aerospace electronics, hubinta la isku halayn karo isgaarsiin heersare ah.

Codsiyada Optoelectronic ee laysarka waxqabadka sare leh iyo LED-yada, oo buuxinaya baahida iftiinka horumarsan iyo teknoolojiyadda bandhigga.

Wafersyadayada SiC SiC Substrates ayaa ah doorashada ugu habboon ee korantada elektiroonigga ah iyo aaladaha RF, gaar ahaan halka la isku halleyn karo oo sarreeya iyo waxqabadka gaarka ah looga baahan yahay. Dufcad kasta oo wafers ah ayaa la mariyaa tijaabo adag si loo hubiyo inay la kulmaan heerarka tayada ugu sarreeya.

Our 2inch, 3inch, 4inch, 6inch, 8inch 4H-N nooca D-grade iyo P-grade SiC wafers yihiin doorashada ugu fiican ee codsiyada semiconductor waxqabadka sare. Iyada oo leh tayada kristal ee gaarka ah, xakamaynta tayada adag, adeegyada habaynta, iyo codsiyo kala duwan, waxaan sidoo kale diyaarin karnaa habaynta sida waafaqsan baahiyahaaga. Weydiinta waa la soo dhaweynayaa!