English

Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD

Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD Sawirka La Soo Bandhigay
  • Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD
  • Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD
  • Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD
  • Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD
  • Wafer 4H-N HPSI SiC ah 6H-N 6H-P 3C-N SiC Wafer Epitaxial ah oo loogu talagalay MOS ama SBD

Sharaxaad Gaaban:

Dhexroorka Wafer Nooca SiC Fasal Codsiyada
2-inji 4H-N
4H-SEMI(HPSI)
6H-N
6H-P
3C-N		 Prime (Waxsoosaar)
Nacasnimo
Cilmi-baaris		 Elektaroonikada korontada, aaladaha RF
3-inji 4H-N
4H-SEMI(HPSI)
6H-P
3C-N		 Prime (Waxsoosaar)
Nacasnimo
Cilmi-baaris		 Tamarta la cusboonaysiin karo, hawada sare
4-inji 4H-N
4H-SEMI(HPSI)
6H-P
3C-N		 Prime (Waxsoosaar)
Nacasnimo
Cilmi-baaris		 Mashiinnada warshadaha, codsiyada soo noqnoqda sare leh
6-inji 4H-N
4H-SEMI(HPSI)
6H-P
3C-N		 Prime (Waxsoosaar)
Nacasnimo
Cilmi-baaris		 Baabuurta, beddelka korontada
8-inji 4H-N
4H-SEMI(HPSI)		 Prime (Waxsoosaar) MOS/SBD
Nacasnimo
Cilmi-baaris		 Gawaarida korontada, aaladaha RF
12-inji 4H-N
4H-SEMI(HPSI)		 Prime (Waxsoosaar)
Nacasnimo
Cilmi-baaris		 Elektaroonikada korontada, aaladaha RF

Astaamaha

Faahfaahinta & shaxda nooca N-nooca

Faahfaahinta & Shaxda HPSI

Faahfaahinta & shaxda wafer epitaxial

S&J

Soo Koobid Subagga SiC ee SiC Epi-wafer

Waxaan bixinaa faylal dhammaystiran oo ah substrates SiC tayo sare leh iyo wafers sic ah oo ku jira noocyo badan oo kala duwan iyo astaamo doping ah - oo ay ku jiraan 4H-N (conductive nooca n), 4H-P (conductive nooca p), 4H-HPSI (daahir sare oo nus-dabool ah), iyo 6H-P (conductive nooca p) - dhexroorkoodu yahay 4″, 6″, iyo 8″ ilaa 12″. Marka laga reebo substrates qaawan, adeegyadayada koritaanka wafer ee qiimaha lagu daray waxay bixiyaan wafers epitaxial (epi) oo leh dhumuc adag oo si adag loo xakameeyey (1–20 µm), xoojinta doping, iyo cufnaanta cilladaha.

Wafer kasta oo sic ah iyo wafer epi ah waxaa la mariyaa kormeer adag oo khadka tooska ah (cufnaanta dhuumaha yar <0.1 cm⁻², qallafsanaanta dusha sare ee Ra <0.2 nm) iyo qeexitaan koronto oo dhammaystiran (CV, khariidaynta iska caabbinta) si loo hubiyo isku mid ahaanshaha iyo waxqabadka kiristaalka ee gaarka ah. Hadday tahay in loo isticmaalo qaybaha elektaroonigga awoodda leh, amplifiers-ka RF ee soo noqnoqda sare leh, ama aaladaha optoelectronic (LEDs, photodetectors), khadadka wax soo saarka ee SiC substrate-ka iyo epi wafer waxay bixiyaan isku halaynta, xasilloonida kulaylka, iyo xoogga burburka ee looga baahan yahay codsiyada maanta ugu baahida badan.

Astaamaha iyo codsiga nooca SiC Substrate 4H-N

  • Qaab-dhismeedka Polytype (Hex-geesle) ee 4H-N SiC

Balaadh ballaaran oo ah ~3.26 eV ayaa hubisa waxqabadka korontada ee deggan iyo adkeysiga kulaylka xaaladaha heerkulka sare iyo kuwa korontada sare leh.

  • Substrate-ka SiCNooca N-Doping

Daawaynta nitrogen ee si sax ah loo xakameeyey waxay keentaa fiirsashada side-ka laga bilaabo 1×10¹⁶ ilaa 1×10¹⁹ cm⁻³ iyo dhaqdhaqaaqa elektarooniga heerkulka qolka ilaa ~900 cm²/V·s, taasoo yaraynaysa khasaaraha gudbinta.

  • Substrate-ka SiCIska caabin ballaaran iyo Midnimo

Kala duwanaanshaha iska caabinta ee la heli karo oo ah 0.01–10 Ω·cm iyo dhumucda wafer-ka ee 350–650 µm oo leh dulqaad ±5% labadaba daawada iyo dhumucda - oo ku habboon sameynta qalabka awoodda sare leh.

  • Substrate-ka SiCCufnaanta cilladaha aadka u hooseeya

Cufnaanta dhuumaha yaryar < 0.1 cm⁻² iyo cufnaanta kala-baxa salka-diyaarka < 500 cm⁻², taasoo keenaysa > 99% wax-soo-saarka qalabka iyo hufnaanta kiristaalka oo sareysa.

  • Substrate-ka SiCQaboojinta Kulaylka Gaarka ah

Gudbinta kulaylka ilaa ~370 W/m·K waxay sahlaysaa ka saarista kulaylka hufan, waxayna kor u qaadaysaa isku halaynta qalabka iyo cufnaanta awoodda.

  • Substrate-ka SiCCodsiyada Bartilmaameedka

SiC MOSFETs, diode-yada Schottky, modules-yada korontada iyo aaladaha RF ee darawallada baabuurta korontada ku shaqeeya, kuwa qoraxda ku shaqeeya, darawallada warshadaha, nidaamyada jiidista, iyo suuqyada kale ee korontada ku shaqeeya ee baahida badan leh.

Qeexitaanka wafer SiC nooca 6-inch ah oo 4H-N ah
Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Fasal Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Dhexroorka 149.5 mm - 150.0 mm 149.5 mm - 150.0 mm
Nooca poly-type 4H 4H
Dhumucda 350 µm ± 15 µm 350 µm ± 25 µm
Jihaynta Wafer-ka Dhidibka ka baxsan: 4.0° dhanka <1120> ± 0.5° Dhidibka ka baxsan: 4.0° dhanka <1120> ± 0.5°
Cufnaanta Tuubooyinka Yaryar ≤ 0.2 cm² ≤ 15 cm²
Iska caabin 0.015 - 0.024 Ω·cm 0.015 - 0.028 Ω·cm
Jihada Fidsan ee Aasaasiga ah [10-10] ± 50° [10-10] ± 50°
Dhererka Fidsan ee Aasaasiga ah 475 mm ± 2.0 mm 475 mm ± 2.0 mm
Ka-saarista Cidhifka 3 mm 3 mm
LTV/TIV / Qaanso / Warp ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm
Qalafsanaan Boolish Ra ≤ 1 nm Boolish Ra ≤ 1 nm
CMP Ra ≤ 0.2 nm ≤ 0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm
Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ah ≤ 0.1%
Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 3%
Kaarboonka Muuqaalka ah Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 5%
Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan Dhererka wadarta ≤ 1 dhexroor wafer ah
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh Lama oggola ≥ 0.2 mm ballac iyo qoto dheer 7 la oggol yahay, ≤ 1 mm midkiiba
Kala-baxa Boorsooyinka Xidhmada leh < 500 cm³ < 500 cm³
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan
Baakad Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah

 

Qeexitaanka wafer SiC nooca 8-inch ah oo 4H-N ah
Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Fasal Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Dhexroorka 199.5 mm - 200.0 mm 199.5 mm - 200.0 mm
Nooca poly-type 4H 4H
Dhumucda 500 µm ± 25 µm 500 µm ± 25 µm
Jihaynta Wafer-ka 4.0° dhanka <110> ± 0.5° 4.0° dhanka <110> ± 0.5°
Cufnaanta Tuubooyinka Yaryar ≤ 0.2 cm² ≤ 5 cm²
Iska caabin 0.015 - 0.025 Ω·cm 0.015 - 0.028 Ω·cm
Jihaynta Sharafta leh
Ka-saarista Cidhifka 3 mm 3 mm
LTV/TIV / Qaanso / Warp ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm
Qalafsanaan Boolish Ra ≤ 1 nm Boolish Ra ≤ 1 nm
CMP Ra ≤ 0.2 nm ≤ 0.5 nm
Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm
Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ah ≤ 0.1%
Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 3%
Kaarboonka Muuqaalka ah Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 5%
Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan Dhererka wadarta ≤ 1 dhexroor wafer ah
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh Lama oggola ≥ 0.2 mm ballac iyo qoto dheer 7 la oggol yahay, ≤ 1 mm midkiiba
Kala-baxa Boorsooyinka Xidhmada leh < 500 cm³ < 500 cm³
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan
Baakad Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah

 

Codsiga 4h-n sic wafer_副本

 

4H-SiC waa walax waxqabad sare leh oo loo isticmaalo qalabka elektarooniga korontada, aaladaha RF, iyo codsiyada heerkulka sare. "4H" waxay tilmaamaysaa qaab-dhismeedka kiristaalka, kaas oo ah lix-geesood, "N"-na wuxuu tilmaamayaa nooca daawada lagu daro ee loo isticmaalo in lagu hagaajiyo waxqabadka walaxda.

The4H-SiCnooca waxaa badanaa loo isticmaalaa:

Elektarooniga Korontada:Waxaa loo isticmaalaa aaladaha sida diode-yada, MOSFET-yada, iyo IGBT-yada loogu talagalay tareennada korontada ku shaqeeya, mashiinnada warshadaha, iyo nidaamyada tamarta la cusboonaysiin karo.
Tiknoolajiyadda 5G:Iyada oo baahida 5G ay u qabto qaybaha soo noqnoqda sare iyo kuwa waxtarka sare leh, awoodda SiC ee ay u leedahay inay la tacaasho danabyada sare iyo inay ku shaqeyso heerkul sare waxay ka dhigaysaa mid ku habboon qalabka kor u qaada korontada saldhigga iyo aaladaha RF.
Nidaamyada Tamarta Qorraxda:Astaamaha maaraynta awoodda ee aadka u fiican ee SiC waxay ku habboon yihiin qalabka korantada iyo beddelayaasha iftiinka qorraxda (fotovoltaic).
Gawaarida Korontada (EVs):SiC waxaa si weyn loogu isticmaalaa tareenada korontada ee EV si loogu beddelo tamar hufan, loo dhaliyo kulaylka oo hooseeya, iyo cufnaanta awoodda oo sareysa.

Noocyada iyo codsiyada nooca SiC Substrate 4H Semi-insulating

Guryaha:

    • Farsamooyinka xakamaynta cufnaanta aan lahayn tuubooyinka yaryar: Waxay hubisaa maqnaanshaha tuubooyinka yaryar, iyadoo hagaajinaysa tayada substrate-ka.

       

    • Farsamooyinka xakamaynta monocrystalline: Waxay damaanad qaadaysaa qaab-dhismeed keli ah oo loogu talagalay sifooyinka walaxda ee la xoojiyay.

       

    • Farsamooyinka xakamaynta ka-qaybgalka: Waxay yareysaa jiritaanka wasakhda ama waxyaabaha ku jira, iyadoo hubineysa substrate saafi ah.

       

    • Farsamooyinka xakamaynta iska caabbinta: Waxay u oggolaanaysaa xakamaynta saxda ah ee iska caabinta korantada, taas oo muhiim u ah waxqabadka qalabka.

       

    • Nidaaminta wasakhda iyo farsamooyinka xakamaynta: Waxay nidaamisaa oo xaddidaa soo bandhigidda wasakhda si loo ilaaliyo daacadnimada substrate-ka.

       

    • Farsamooyinka xakamaynta ballaca tallaabada hoose: Waxay bixisaa xakameyn sax ah oo ku saabsan ballaca tallaabada, iyadoo hubinaysa isku dheelitirnaanta dhammaan substrate-ka

 

Qeexitaanka substrate-ka 4H-semi-SiC ee 6Inch
Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Dhexroorka (mm) 145 mm - 150 mm 145 mm - 150 mm
Nooca poly-type 4H 4H
Dhumuc (um) 500 ± 15 500 ± 25
Jihaynta Wafer-ka Dhidibka: ±0.0001° Dhidibka: ±0.05°
Cufnaanta Tuubooyinka Yaryar ≤ 15 cm-2 ≤ 15 cm-2
Iska caabinta (Ωcm) ≥ 10E3 ≥ 10E3
Jihada Fidsan ee Aasaasiga ah (0-10)° ± 5.0° (10-10)° ± 5.0°
Dhererka Fidsan ee Aasaasiga ah Qaylo-dhaan Qaylo-dhaan
Ka-saarista Cidhifyada (mm) ≤ 2.5 µm / ≤ 15 µm ≤ 5.5 µm / ≤ 35 µm
LTV / Baaquli / Wareeg ≤ 3 µm ≤ 3 µm
Qalafsanaan Boolish Ra ≤ 1.5 µm Boolish Ra ≤ 1.5 µm
Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh ≤ 20 µm ≤ 60 µm
Saxannada Kulaylka iyadoo la adeegsanayo Iftiin Xoog Badan Wadarta ≤ 0.05% Wadarta ≤ 3%
Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Kaarboonka Muuqaalka ah ≤ 0.05% Wadarta ≤ 3%
Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan ≤ 0.05% Wadarta ≤ 4%
Jajabyada Geesaha oo ay sameeyeen Iftiin Xoog Badan (Cabbir) Lama Ogolaan > 02 mm Ballaca iyo Qotoda Lama Ogolaan > 02 mm Ballaca iyo Qotoda
Ballaarinta Kuleylka Caawinta ≤ 500 µm ≤ 500 µm
Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan ≤ 1 x 10^5 ≤ 1 x 10^5
Baakad Cajalad badan oo wafer ah ama Weel Wafer Hal ah Cajalad badan oo wafer ah ama Weel Wafer Hal ah

Qeexitaanka Substrate-ka SiC ee 4-Inji ah oo 4H-Semi-daboolaya

Halbeegga Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
Sifooyinka Jirka
Dhexroorka 99.5 mm – 100.0 mm 99.5 mm – 100.0 mm
Nooca poly-type 4H 4H
Dhumucda 500 μm ± 15 μm 500 μm ± 25 μm
Jihaynta Wafer-ka Dhidibka: <600h > 0.5° Dhidibka: <000h > 0.5°
Sifooyinka Korontada
Cufnaanta Tuubooyinka Yaryar (MPD) ≤1 cm⁻² ≤15 cm⁻²
Iska caabin ≥150 Ω·cm ≥1.5 Ω·cm
Dulqaadka Joomatari
Jihada Fidsan ee Aasaasiga ah (0x10) ± 5.0° (0x10) ± 5.0°
Dhererka Fidsan ee Aasaasiga ah 52.5 mm ± 2.0 mm 52.5 mm ± 2.0 mm
Dhererka Fidsan ee Labaad 18.0 mm ± 2.0 mm 18.0 mm ± 2.0 mm
Jihada Fidsan ee Labaad 90° CW laga bilaabo Prime flat ± 5.0° (Si wejigeeda kor u qaad) 90° CW laga bilaabo Prime flat ± 5.0° (Si wejigeeda kor u qaad)
Ka-saarista Cidhifka 3 mm 3 mm
LTV / TTV / Qaanso / Warp ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
Tayada Dusha Sare
Qalafsanaanta Dusha sare (Polish Ra) ≤1 nm ≤1 nm
Qalafsanaanta Dusha sare (CMP Ra) ≤0.2 nm ≤0.2 nm
Dildilaaca Geesaha (Nalalka Xoogga Sare leh) Lama oggola Dhererka wadarta ah ≥10 mm, hal dildilaac ≤2 mm
Cilladaha Saxanka Lix-geesoodka ah ≤0.05% aagga wadarta ah ≤0.1% aagga wadarta ah
Meelaha Ka Mid Ahaanshaha Noocyada Kala Duwan Lama oggola ≤1% aagga wadarta ah
Kaarboonka Muuqaalka ah ≤0.05% aagga wadarta ah ≤1% aagga wadarta ah
Xoqashada Dusha Sare ee Silikoon Lama oggola Dhererka wadarta ah ee ≤1 dhexroorka wafer
Jajabyada Geesaha Lama oggola (≥0.2 mm ballac/qoto dheer) ≤5 jajab (midkiiba ≤1 mm)
Wasakhowga Dusha Sare ee Silikoon Lama cayimin Lama cayimin
Baakad
Baakad Cajalad badan oo wafer ah ama weel hal wafer ah Cajalad badan oo wafer ah ama


Codsiga:

TheSubstrates-ka SiC 4H ee nus-daboolayawaxaa ugu horreyn loo isticmaalaa aaladaha elektaroonigga ah ee awoodda sare leh iyo kuwa soo noqnoqda sare leh, gaar ahaan aaladaha elektaroonigga ah ee korontada ku shaqeeyaGoobta RFSubstrates-kani waa kuwo muhiim u ah codsiyada kala duwan oo ay ku jiraannidaamyada isgaarsiinta microwave-ka, radar taxane ah oo weji-waji ah, iyoqalabka korontada ee bilaa-waayirka ahAwooddooda kulaylka sare iyo astaamahooda korantada ee aadka u fiican ayaa ka dhigaya kuwo ku habboon codsiyada adag ee elektaroonigga korontada iyo nidaamyada isgaarsiinta.

HPSI sic wafer-application_副本

 

Sifadaha iyo codsiyada nooca SiC epi wafer 4H-N

SiC 4H-N Nooca Epi Wafer Sifooyinka iyo Codsiyada

 

Sifooyinka SiC 4H-N Nooca Epi Wafer:

 

Halabuurka Agabka:

SiC (Silicon Carbide): Waxaa loo yaqaanaa adkeysigeeda cajiibka ah, kulaylka sare ee kulaylka, iyo sifooyinka korontada ee aadka u fiican, SiC waa mid ku habboon aaladaha elektaroonigga ah ee waxqabadka sare leh.
Nooca Boliyoodhka 4H-SiCNooca polytype-ka 4H-SiC waxaa loo yaqaanaa hufnaantiisa sare iyo xasilloonidiisa codsiyada elektaroonigga ah.
Nooca N-Doping: Nooca N-doping (oo lagu dahaadhay nitrogen) wuxuu bixiyaa dhaqdhaqaaq elektaroonig ah oo aad u fiican, taasoo ka dhigaysa SiC mid ku habboon codsiyada soo noqnoqda sare iyo kuwa awoodda sare leh.

 

 

Qaboojinta Kulaylka Sare:

Wafer-yada SiC waxay leeyihiin gudbin kuleyl oo heer sare ah, badanaa waxay u dhexeeyaan laga bilaabo120–200 W/m·K, taasoo u oggolaanaysa inay si wax ku ool ah u maareeyaan kulaylka aaladaha awoodda sare leh sida transistors-ka iyo diode-yada.

Ballaca Ballaaran:

Iyada oo leh faa'iido weyn3.26 eV, 4H-SiC waxay ku shaqayn kartaa danab sare, soo noqnoqosho, iyo heerkul marka loo eego aaladaha caadiga ah ee ku salaysan silikoon, taasoo ka dhigaysa mid ku habboon codsiyada waxtarka sare leh iyo kuwa waxqabadka sare leh.

 

Sifooyinka Korontada:

Dhaqdhaqaaqa elektaroonigga sare ee SiC iyo socodka elektaroonigga ah ayaa ka dhigaya mid ku habboonelektarooniga korontada, oo bixiya xawaare degdeg ah oo loogu beddelo koronto iyo awood maareyn koronto oo sareysa, taasoo keentay nidaamyo maareyn koronto oo hufan.

 

 

Iska caabbinta Farsamada iyo Kiimikada:

SiC waa mid ka mid ah agabka ugu adag, marka laga reebo dheemanka oo keliya, waana mid aad u adkaysi u leh oksaydhka iyo miridhka, taasoo ka dhigaysa mid waara jawi adag.

 

 

Codsiyada SiC 4H-N Nooca Epi Wafer:

 

Elektarooniga Korontada:

Wafer-yada nooca SiC 4H-N ee epi-ga ayaa si weyn loogu isticmaalaa warshadaha cuntada.MOSFET-yada awoodda leh, IGBT-yada, iyodiode-yadaeebeddelka awooddanidaamyada sidaqalabka qoraxda lagu beddelo, gawaarida korontada ku shaqeeya, iyonidaamyada kaydinta tamarta, oo bixinaya waxqabad la xoojiyay iyo hufnaan tamar.

 

Gawaarida Korontada (EVs):

In tareenada korontada ku shaqeeya, kontaroolayaasha mootada, iyosaldhigyada dallacaadda, Wafers-ka SiC waxay gacan ka geystaan ​​​​gaarista hufnaanta baytariga oo wanaagsan, dallacaad degdeg ah, iyo hagaajinta waxqabadka tamarta guud ahaan sababtoo ah awooddooda ay u leeyihiin inay la qabsadaan awoodda sare iyo heerkulka.

Nidaamyada Tamarta La Cusboonaysiin Karo:

Qalabka Korontada ee Qorraxda: Wafer-yada SiC waxaa loo isticmaalaa gudahanidaamyada tamarta qorraxdasi loogu beddelo korontada DC-ga laga bilaabo muraayadaha qorraxda una beddelo AC, iyadoo la kordhinayo waxtarka guud ee nidaamka iyo waxqabadka.
Marawaxadaha DabayshaTiknoolajiyadda SiC waxaa loo adeegsadaa gudahanidaamyada xakamaynta marawaxadaha dabaysha, hagaajinta soo saarista korontada iyo hufnaanta beddelka.

Hawada Sare iyo Difaaca:

Wafer-yada SiC ayaa ku habboon in loo isticmaalo gudahaqalabka elektarooniga hawadaiyocodsiyada militariga, oo ay ku jiraannidaamyada radariyoqalabka elektarooniga dayax-gacmeedka, halkaas oo iska caabbinta shucaaca sare iyo xasilloonida kulaylka ay muhiim yihiin.

 

 

Heerkulka Sare iyo Codsiyada Soo Noqnoqda Sare:

Wafer-yada SiC-ga ayaa aad ugu fiicanelektarooniga heerkulka sare leh, oo loo adeegsadaymatoorada diyaaradaha, dayax-gacmeed, iyonidaamyada kuleylinta warshadaha, maadaama ay sii wadaan waxqabadkooda xaaladaha kulaylka daran. Intaa waxaa dheer, farqiga ballaaran ee ay leeyihiin wuxuu u oggolaanayaa in loo isticmaalo gudahacodsiyada soo noqnoqda sarejeclowQalabka RFiyoisgaarsiinta microwave-ka.

 

 

Qeexitaanka dhidibka epit ee 6-inji ah
Halbeegga cutub Z-MOS
Nooca Habdhaqan / Dopant - Nooca N / Naytarojiin
Lakabka Kaydka Dhumucda Lakabka Kaydka um 1
Dulqaadka dhumucda Lakabka Kaydka % ±20%
Xoogga Lakabka Kaydka cm-3 1.00E+18
Dulqaadka Xoogga Lakabka Kaydka % ±20%
Lakabka Epi ee 1aad Dhumucda Lakabka Epi um 11.5
Dhumucda Lakabka Epi Midaysan % ±4%
Dulqaadka dhumucda lakabka Epi((Spec-
Ugu badnaan , Ugu yaraan)/Spec)		 % ±5%
Xoogga Lakabka Epi cm-3 1E 15~ 1E 18
Dulqaadka Xoogga Lakabka Epi % 6%
Midaynta Xooggaynta Lakabka Epi (σ)
/celcelis)		 % ≤5%
Midaynta Xoogga Lakabka Epi
<(ugu badnaan-daqiiqo)/(ugu badnaan+daqiiqo>		 % ≤ 10%
Qaabka Wafer Epitaixal Qaansada um ≤±20
WARP um ≤30
TV-ga um ≤ 10
LTV um ≤2
Astaamaha Guud Dhererka xoqidda mm ≤30mm
Jajabyada Geesaha - MIDNA
Qeexidda cilladaha ≥97%
（Waxaa lagu cabiray 2*2，
Cilladaha dilaaga ah waxaa ka mid ah: Cilladaha waxaa ka mid ah
Tuubo yar/Godad waaweyn, Karootada, Saddex xagal
Wasakhowga birta atamka/cm² d f f ll i
≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K,Ti,Ca&Mn)
Xirmo Tilmaamaha Baakaynta kumbiyuutarro/sanduuq Cajalad badan oo wafer ah ama weel wafer ah oo keliya

 

 

 

 

Qeexitaanka epitaxial ee nooca 8-inji ah ee N-nooca ah
Halbeegga cutub Z-MOS
Nooca Habdhaqan / Dopant - Nooca N / Naytarojiin
Lakabka kaydka Dhumucda Lakabka Kaydka um 1
Dulqaadka dhumucda Lakabka Kaydka % ±20%
Xoogga Lakabka Kaydka cm-3 1.00E+18
Dulqaadka Xoogga Lakabka Kaydka % ±20%
Lakabka Epi ee 1aad Celceliska Dhumucda Epi Lakabyada um 8~ 12
Dhumucda Epi Lakabyada Midaysanaanta (σ/celcelis) % ≤2.0
Dulqaadka dhumucda lakabka Epi((Spec -Max, Ugu Yar)/Spec) % ±6
Epi Layers Celceliska Saafiga ah ee Doping-ka cm-3 8E+15 ~2E+16
Isku-darka Daawada Saafiga ah ee Epi Layers (σ/celcelis) % ≤5
Epi Layers Dulqaadka Doping-ka ee Net ((Spec -Max，) % ± 10.0
Qaabka Wafer Epitaixal Mi )/S )
Duub		 um ≤50.0
Qaansada um ± 30.0
TV-ga um ≤ 10.0
LTV um ≤4.0 (10mm × 10mm)
Guud ahaan
Astaamaha		 Xoqitaan - Dhererka wadarta ≤ 1/2 dhexroorka Wafer
Jajabyada Geesaha - ≤2 jajab, Gacan kasta ≤1.5mm
Wasakheynta Birta Dusha Sare atamka/cm2 ≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K,Ti,Ca&Mn)
Kormeerka Cilladaha % ≥ 96.0
(Cillado 2X2 ah waxaa ka mid ah Micropipe /Godad waaweyn,
Cilladaha Karootada, Saddex-xagal, Hoos u dhac,
Toosan/IGSF-yada, BPD)
Wasakheynta Birta Dusha Sare atamka/cm2 ≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
Hg,Na,K,Ti,Ca&Mn)
Xirmo Tilmaamaha Baakaynta - Cajalad badan oo wafer ah ama weel wafer ah oo keliya

 

 

 

 

Su'aalaha iyo Jawaabaha ee SiC wafer-ka

S1: Waa maxay faa'iidooyinka ugu muhiimsan ee isticmaalka wafers-ka SiC marka loo eego wafers-ka silicon-ka dhaqameed ee elektaroonigga korontada?

A1:
Wafer-ka SiC wuxuu bixiyaa faa'iidooyin dhowr ah oo muhiim ah marka loo eego wafer-ka silicon (Si) ee dhaqameed ee elektaroonigga korontada, oo ay ku jiraan:

Waxtarka Sare: SiC waxay leedahay faa'iido ballaaran (3.26 eV) marka la barbar dhigo silicon (1.1 eV), taasoo u oggolaanaysa aaladaha inay ku shaqeeyaan danab sare, soo noqnoqosho, iyo heerkul sare. Tani waxay keenaysaa luminta korontada oo hooseysa iyo hufnaan sare oo ku saabsan nidaamyada beddelka korontada.
Qaboojinta Kulaylka Sare: Daawaynta kulaylka ee SiC aad bay uga badan tahay tan silicon, taasoo suurtogalinaysa kala-baxa kulaylka oo wanaagsan codsiyada awoodda sare leh, taas oo hagaajinaysa isku halaynta iyo cimriga aaladaha korontada.
Danab Sare iyo Maareynta Hadda: Aaladaha SiC waxay la tacaali karaan heerarka danabka sare iyo hadda, taasoo ka dhigaysa kuwo ku habboon codsiyada awoodda sare leh sida gawaarida korontada, nidaamyada tamarta la cusboonaysiin karo, iyo darawallada matoorada warshadaha.
Xawaaraha Beddelka Degdegga ah: Aaladaha SiC waxay leeyihiin awoodo beddelaad oo dhakhso badan, kuwaas oo gacan ka geysta yareynta luminta tamarta iyo cabbirka nidaamka, taasoo ka dhigaysa kuwo ku habboon codsiyada soo noqnoqda sare leh.

 

S2: Waa maxay codsiyada ugu muhiimsan ee wafer-ka SiC ee warshadaha baabuurta?

A2:
Warshadaha baabuurta, wafer-yada SiC waxaa inta badan loo isticmaalaa:

Tareenada Korontada ee Gawaarida Korontada (EV)Qaybaha ku salaysan SiC sidarogaal-celiyeyaashaiyoMOSFET-yada awoodda lehkor u qaadida hufnaanta iyo waxqabadka tareenada korontada ku shaqeeya iyadoo la suurtagelinayo xawaaraha wareejinta dhaqsaha badan iyo cufnaanta tamarta oo sareysa. Tani waxay keenaysaa cimri dheer oo baytari ah iyo waxqabad guud oo wanaagsan oo gaadhiga ah.
Dareewalada saaranQalabka SiC wuxuu gacan ka geystaa hagaajinta hufnaanta nidaamyada dallacaadda ee saaran iyadoo la suurtagelinayo waqtiyada dallacaadda oo dhakhso badan iyo maaraynta kulaylka oo wanaagsan, taas oo muhiim u ah EV-yada si ay u taageeraan saldhigyada dallacaadda awoodda sare leh.
Nidaamyada Maareynta Baytariga (BMS)Tiknoolajiyadda SiC waxay wanaajisaa hufnaantanidaamyada maaraynta baytariga, taasoo u oggolaanaysa nidaaminta danabka oo wanaagsan, maaraynta awoodda oo sarreysa, iyo cimri dheer oo batteriga ah.
Beddelayaasha DC-DC: Wafer-yada SiC waxaa loo isticmaalaa gudahaBeddelayaasha DC-DCsi loogu beddelo awoodda DC-ga ee danab sare leh koronto yar oo DC ah si hufan, taas oo muhiim u ah baabuurta korontada si ay u maareeyaan awoodda batteriga una maareeyaan qaybaha kala duwan ee gaariga.
Waxqabadka sare ee SiC ee codsiyada danab sare, heerkulka sare, iyo hufnaanta sare waxay ka dhigaysaa mid lama huraan u ah u gudubka warshadaha baabuurta ee dhaqdhaqaaqa korantada.

 

  • Kii hore:
  • Xiga:

    • Qeexitaanka wafer SiC nooca 6-inch ah oo 4H-N ah
    Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Fasal Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Dhexroorka 149.5 mm – 150.0 mm 149.5 mm – 150.0 mm
    Nooca poly-type 4H 4H
    Dhumucda 350 µm ± 15 µm 350 µm ± 25 µm
    Jihaynta Wafer-ka Dhidibka ka baxsan: 4.0° dhanka <1120> ± 0.5° Dhidibka ka baxsan: 4.0° dhanka <1120> ± 0.5°
    Cufnaanta Tuubooyinka Yaryar ≤ 0.2 cm² ≤ 15 cm²
    Iska caabin 0.015 – 0.024 Ω·cm 0.015 – 0.028 Ω·cm
    Jihada Fidsan ee Aasaasiga ah [10-10] ± 50° [10-10] ± 50°
    Dhererka Fidsan ee Aasaasiga ah 475 mm ± 2.0 mm 475 mm ± 2.0 mm
    Ka-saarista Cidhifka 3 mm 3 mm
    LTV/TIV / Qaanso / Warp ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm
    Qalafsanaan Boolish Ra ≤ 1 nm Boolish Ra ≤ 1 nm
    CMP Ra ≤ 0.2 nm ≤ 0.5 nm
    Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm
    Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ah ≤ 0.1%
    Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 3%
    Kaarboonka Muuqaalka ah Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 5%
    Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan Dhererka wadarta ≤ 1 dhexroor wafer ah
    Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh Lama oggola ≥ 0.2 mm ballac iyo qoto dheer 7 la oggol yahay, ≤ 1 mm midkiiba
    Kala-baxa Boorsooyinka Xidhmada leh < 500 cm³ < 500 cm³
    Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan
    Baakad Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah

     

    Qeexitaanka wafer SiC nooca 8-inch ah oo 4H-N ah
    Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Fasal Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Dhexroorka 199.5 mm – 200.0 mm 199.5 mm – 200.0 mm
    Nooca poly-type 4H 4H
    Dhumucda 500 µm ± 25 µm 500 µm ± 25 µm
    Jihaynta Wafer-ka 4.0° dhanka <110> ± 0.5° 4.0° dhanka <110> ± 0.5°
    Cufnaanta Tuubooyinka Yaryar ≤ 0.2 cm² ≤ 5 cm²
    Iska caabin 0.015 – 0.025 Ω·cm 0.015 – 0.028 Ω·cm
    Jihaynta Sharafta leh
    Ka-saarista Cidhifka 3 mm 3 mm
    LTV/TIV / Qaanso / Warp ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm
    Qalafsanaan Boolish Ra ≤ 1 nm Boolish Ra ≤ 1 nm
    CMP Ra ≤ 0.2 nm ≤ 0.5 nm
    Dildilaaca Geesaha oo ay sameeyeen Iftiin Xooggan oo Sare Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm Dhererka wadarta ≤ 20 mm dherer hal ≤ 2 mm
    Taarikada Hex-ka ah oo ay sameeyeen Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ah ≤ 0.1%
    Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 3%
    Kaarboonka Muuqaalka ah Aagga wadarta ah ≤ 0.05% Aagga wadarta ≤ 5%
    Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan Dhererka wadarta ≤ 1 dhexroor wafer ah
    Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh Lama oggola ≥ 0.2 mm ballac iyo qoto dheer 7 la oggol yahay, ≤ 1 mm midkiiba
    Kala-baxa Boorsooyinka Xidhmada leh < 500 cm³ < 500 cm³
    Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan
    Baakad Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah Cajalad badan oo wafer ah ama Weel Wafer ah oo Keli ah

    Qeexitaanka substrate-ka 4H-semi-SiC ee 6Inch
    Hantida Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Dhexroorka (mm) 145 mm – 150 mm 145 mm – 150 mm
    Nooca poly-type 4H 4H
    Dhumuc (um) 500 ± 15 500 ± 25
    Jihaynta Wafer-ka Dhidibka: ±0.0001° Dhidibka: ±0.05°
    Cufnaanta Tuubooyinka Yaryar ≤ 15 cm-2 ≤ 15 cm-2
    Iska caabinta (Ωcm) ≥ 10E3 ≥ 10E3
    Jihada Fidsan ee Aasaasiga ah (0-10)° ± 5.0° (10-10)° ± 5.0°
    Dhererka Fidsan ee Aasaasiga ah Qaylo-dhaan Qaylo-dhaan
    Ka-saarista Cidhifyada (mm) ≤ 2.5 µm / ≤ 15 µm ≤ 5.5 µm / ≤ 35 µm
    LTV / Baaquli / Wareeg ≤ 3 µm ≤ 3 µm
    Qalafsanaan Boolish Ra ≤ 1.5 µm Boolish Ra ≤ 1.5 µm
    Jajabyada Edge oo ay samaysay Iftiinka Xoogga Sare leh ≤ 20 µm ≤ 60 µm
    Saxannada Kulaylka iyadoo la adeegsanayo Iftiin Xoog Badan Wadarta ≤ 0.05% Wadarta ≤ 3%
    Meelaha Nooca Badan leh iyadoo la adeegsanayo Iftiin Xoog Badan Kaarboonka Muuqaalka ah ≤ 0.05% Wadarta ≤ 3%
    Xoqashada Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan ≤ 0.05% Wadarta ≤ 4%
    Jajabyada Geesaha oo ay sameeyeen Iftiin Xoog Badan (Cabbir) Lama Ogolaan > 02 mm Ballaca iyo Qotoda Lama Ogolaan > 02 mm Ballaca iyo Qotoda
    Ballaarinta Kuleylka Caawinta ≤ 500 µm ≤ 500 µm
    Wasakheynta Dusha Sare ee Silikoon iyadoo la adeegsanayo Iftiin Xoog Badan ≤ 1 x 10^5 ≤ 1 x 10^5
    Baakad Cajalad badan oo wafer ah ama Weel Wafer Hal ah Cajalad badan oo wafer ah ama Weel Wafer Hal ah

     

    Qeexitaanka Substrate-ka SiC ee 4-Inji ah oo 4H-Semi-daboolaya

    Halbeegga Heerka Wax-soo-saarka ee Eber MPD (Darajada Z) Darajada Madow (D Darajada)
    Sifooyinka Jirka
    Dhexroorka 99.5 mm – 100.0 mm 99.5 mm – 100.0 mm
    Nooca poly-type 4H 4H
    Dhumucda 500 μm ± 15 μm 500 μm ± 25 μm
    Jihaynta Wafer-ka Dhidibka: <600h > 0.5° Dhidibka: <000h > 0.5°
    Sifooyinka Korontada
    Cufnaanta Tuubooyinka Yaryar (MPD) ≤1 cm⁻² ≤15 cm⁻²
    Iska caabin ≥150 Ω·cm ≥1.5 Ω·cm
    Dulqaadka Joomatari
    Jihada Fidsan ee Aasaasiga ah (0×10) ± 5.0° (0×10) ± 5.0°
    Dhererka Fidsan ee Aasaasiga ah 52.5 mm ± 2.0 mm 52.5 mm ± 2.0 mm
    Dhererka Fidsan ee Labaad 18.0 mm ± 2.0 mm 18.0 mm ± 2.0 mm
    Jihada Fidsan ee Labaad 90° CW laga bilaabo Prime flat ± 5.0° (Si wejigeeda kor u qaad) 90° CW laga bilaabo Prime flat ± 5.0° (Si wejigeeda kor u qaad)
    Ka-saarista Cidhifka 3 mm 3 mm
    LTV / TTV / Qaanso / Warp ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
    Tayada Dusha Sare
    Qalafsanaanta Dusha sare (Polish Ra) ≤1 nm ≤1 nm
    Qalafsanaanta Dusha sare (CMP Ra) ≤0.2 nm ≤0.2 nm
    Dildilaaca Geesaha (Nalalka Xoogga Sare leh) Lama oggola Dhererka wadarta ah ≥10 mm, hal dildilaac ≤2 mm
    Cilladaha Saxanka Lix-geesoodka ah ≤0.05% aagga wadarta ah ≤0.1% aagga wadarta ah
    Meelaha Ka Mid Ahaanshaha Noocyada Kala Duwan Lama oggola ≤1% aagga wadarta ah
    Kaarboonka Muuqaalka ah ≤0.05% aagga wadarta ah ≤1% aagga wadarta ah
    Xoqashada Dusha Sare ee Silikoon Lama oggola Dhererka wadarta ah ee ≤1 dhexroorka wafer
    Jajabyada Geesaha Lama oggola (≥0.2 mm ballac/qoto dheer) ≤5 jajab (midkiiba ≤1 mm)
    Wasakhowga Dusha Sare ee Silikoon Lama cayimin Lama cayimin
    Baakad
    Baakad Cajalad badan oo wafer ah ama weel hal wafer ah Cajalad badan oo wafer ah ama

     

    Qeexitaanka dhidibka epit ee 6-inji ah
    Halbeegga cutub Z-MOS
    Nooca Habdhaqan / Dopant - Nooca N / Naytarojiin
    Lakabka Kaydka Dhumucda Lakabka Kaydka um 1
    Dulqaadka dhumucda Lakabka Kaydka % ±20%
    Xoogga Lakabka Kaydka cm-3 1.00E+18
    Dulqaadka Xoogga Lakabka Kaydka % ±20%
    Lakabka Epi ee 1aad Dhumucda Lakabka Epi um 11.5
    Dhumucda Lakabka Epi Midaysan % ±4%
    Dulqaadka dhumucda lakabka Epi((Spec-
    Ugu badnaan , Ugu yaraan)/Spec)    		 % ±5%
    Xoogga Lakabka Epi cm-3 1E 15~ 1E 18
    Dulqaadka Xoogga Lakabka Epi % 6%
    Midaynta Xooggaynta Lakabka Epi (σ)
    /celcelis)    		 % ≤5%
    Midaynta Xoogga Lakabka Epi
    <(ugu badnaan-daqiiqo)/(ugu badnaan+daqiiqo>    		 % ≤ 10%
    Qaabka Wafer Epitaixal Qaansada um ≤±20
    WARP um ≤30
    TV-ga um ≤ 10
    LTV um ≤2
    Astaamaha Guud Dhererka xoqidda mm ≤30mm
    Jajabyada Geesaha - MIDNA
    Qeexidda cilladaha ≥97%
    （Waxaa lagu cabiray 2*2，
    Cilladaha dilaaga ah waxaa ka mid ah: Cilladaha waxaa ka mid ah
    Tuubo yar/Godad waaweyn, Karootada, Saddex xagal
    Wasakhowga birta atamka/cm² d f f ll i
    ≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K,Ti,Ca&Mn)
    Xirmo Tilmaamaha Baakaynta kumbiyuutarro/sanduuq Cajalad badan oo wafer ah ama weel wafer ah oo keliya

     

    Qeexitaanka epitaxial ee nooca 8-inji ah ee N-nooca ah
    Halbeegga cutub Z-MOS
    Nooca Habdhaqan / Dopant - Nooca N / Naytarojiin
    Lakabka kaydka Dhumucda Lakabka Kaydka um 1
    Dulqaadka dhumucda Lakabka Kaydka % ±20%
    Xoogga Lakabka Kaydka cm-3 1.00E+18
    Dulqaadka Xoogga Lakabka Kaydka % ±20%
    Lakabka Epi ee 1aad Celceliska Dhumucda Epi Lakabyada um 8~ 12
    Dhumucda Epi Lakabyada Midaysanaanta (σ/celcelis) % ≤2.0
    Dulqaadka dhumucda lakabka Epi((Spec -Max, Ugu Yar)/Spec) % ±6
    Epi Layers Celceliska Saafiga ah ee Doping-ka cm-3 8E+15 ~2E+16
    Isku-darka Daawada Saafiga ah ee Epi Layers (σ/celcelis) % ≤5
    Epi Layers Dulqaadka Doping-ka ee Net ((Spec -Max，) % ± 10.0
    Qaabka Wafer Epitaixal Mi )/S )
    Duub    		 um ≤50.0
    Qaansada um ± 30.0
    TV-ga um ≤ 10.0
    LTV um ≤4.0 (10mm × 10mm)
    Guud ahaan
    Astaamaha    		 Xoqitaan - Dhererka wadarta ≤ 1/2 dhexroorka Wafer
    Jajabyada Geesaha - ≤2 jajab, Gacan kasta ≤1.5mm
    Wasakheynta Birta Dusha Sare atamka/cm2 ≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K,Ti,Ca&Mn)
    Kormeerka Cilladaha % ≥ 96.0
    (Cillado 2X2 ah waxaa ka mid ah Micropipe /Godad waaweyn,
    Cilladaha Karootada, Saddex-xagal, Hoos u dhac,
    Toosan/IGSF-yada, BPD)
    Wasakheynta Birta Dusha Sare atamka/cm2 ≤5E10 atamka/cm2 (Al, Cr, Fe, Ni, Cu, Zn,
    Hg,Na,K,Ti,Ca&Mn)
    Xirmo Tilmaamaha Baakaynta - Cajalad badan oo wafer ah ama weel wafer ah oo keliya

    S1: Waa maxay faa'iidooyinka ugu muhiimsan ee isticmaalka wafers-ka SiC marka loo eego wafers-ka silicon-ka dhaqameed ee elektaroonigga korontada?

    A1:
    Wafer-ka SiC wuxuu bixiyaa faa'iidooyin dhowr ah oo muhiim ah marka loo eego wafer-ka silicon (Si) ee dhaqameed ee elektaroonigga korontada, oo ay ku jiraan:

    Waxtarka Sare: SiC waxay leedahay faa'iido ballaaran (3.26 eV) marka la barbar dhigo silicon (1.1 eV), taasoo u oggolaanaysa aaladaha inay ku shaqeeyaan danab sare, soo noqnoqosho, iyo heerkul sare. Tani waxay keenaysaa luminta korontada oo hooseysa iyo hufnaan sare oo ku saabsan nidaamyada beddelka korontada.
    Qaboojinta Kulaylka Sare: Daawaynta kulaylka ee SiC aad bay uga badan tahay tan silicon, taasoo suurtogalinaysa kala-baxa kulaylka oo wanaagsan codsiyada awoodda sare leh, taas oo hagaajinaysa isku halaynta iyo cimriga aaladaha korontada.
    Danab Sare iyo Maareynta Hadda: Aaladaha SiC waxay la tacaali karaan heerarka danabka sare iyo hadda, taasoo ka dhigaysa kuwo ku habboon codsiyada awoodda sare leh sida gawaarida korontada, nidaamyada tamarta la cusboonaysiin karo, iyo darawallada matoorada warshadaha.
    Xawaaraha Beddelka Degdegga ah: Aaladaha SiC waxay leeyihiin awoodo beddelaad oo dhakhso badan, kuwaas oo gacan ka geysta yareynta luminta tamarta iyo cabbirka nidaamka, taasoo ka dhigaysa kuwo ku habboon codsiyada soo noqnoqda sare leh.

     

     

    S2: Waa maxay codsiyada ugu muhiimsan ee wafer-ka SiC ee warshadaha baabuurta?

    A2:
    Warshadaha baabuurta, wafer-yada SiC waxaa inta badan loo isticmaalaa:

    Tareenada Korontada ee Gawaarida Korontada (EV)Qaybaha ku salaysan SiC sidarogaal-celiyeyaashaiyoMOSFET-yada awoodda lehkor u qaadida hufnaanta iyo waxqabadka tareenada korontada ku shaqeeya iyadoo la suurtogelinayo xawaaraha wareejinta degdega ah iyo cufnaanta tamarta oo sareysa. Tani waxay keenaysaa cimri dheer oo baytari ah iyo waxqabad guud oo wanaagsan oo gaadhiga ah.
    Dareewalada saaranQalabka SiC wuxuu gacan ka geystaa hagaajinta hufnaanta nidaamyada dallacaadda ee saaran iyadoo la suurtagelinayo waqtiyada dallacaadda oo dhakhso badan iyo maaraynta kulaylka oo wanaagsan, taas oo muhiim u ah EV-yada si ay u taageeraan saldhigyada dallacaadda awoodda sare leh.
    Nidaamyada Maareynta Baytariga (BMS)Tiknoolajiyadda SiC waxay wanaajisaa hufnaantanidaamyada maaraynta baytariga, taasoo u oggolaanaysa nidaaminta danabka oo wanaagsan, maaraynta awoodda oo sarreysa, iyo cimri dheer oo batteriga ah.
    Beddelayaasha DC-DC: Wafer-yada SiC waxaa loo isticmaalaa gudahaBeddelayaasha DC-DCsi loogu beddelo awoodda DC-ga ee danab sare leh koronto yar oo DC ah si hufan, taas oo muhiim u ah baabuurta korontada si ay u maareeyaan awoodda batteriga una maareeyaan qaybaha kala duwan ee gaariga.
    Waxqabadka sare ee SiC ee codsiyada danab sare, heerkulka sare, iyo hufnaanta sare waxay ka dhigaysaa mid lama huraan u ah u gudubka warshadaha baabuurta ee dhaqdhaqaaqa korantada.

     

     

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