Substrate SiC Dia200mm 4H-N iyo HPSI Silicon carbide

Sharaxaad Gaaban:

Substrate-ka Silicon-carbide (SiC wafer) waa qalab semiconductor ballaaran leh oo leh astaamo jireed iyo kiimiko aad u wanaagsan, gaar ahaan heerkul sare, soo noqnoqoshada sare, awood sare, iyo jawi shucaac sare leh. 4H-V waa mid ka mid ah qaababka crystalline ee carbide silicon. Intaa waxaa dheer, substrate-yada SiC waxay leeyihiin kuleyl wanaagsan oo kuleyl ah, taas oo macnaheedu yahay inay si wax ku ool ah u baabi'in karaan kulaylka ay abuuraan aaladaha inta lagu jiro hawlgalka, taasoo sii kordhinaysa kalsoonida iyo cimriga aaladaha.

Email noogu soo dir

Faahfaahinta Alaabta

Tags Product

4H-N iyo HPSI waa noocyo badan oo silikoon carbide ah (SiC), oo leh qaab dhismeed crystal ah oo ka kooban unugyo laba geesood ah oo ka kooban afar kaarboon iyo afar atamka silikoon. Qaab dhismeedkani waxa uu agabka ku siinayaa dhaq-dhaqaaq elektaroonik ah oo aad u fiican iyo sifooyinka danab ee burburay. Dhammaan noocyada kala duwan ee SiC, 4H-N iyo HPSI ayaa si weyn loogu isticmaalaa goobta korantada korantada sababtoo ah dhaqdhaqaaqa elektarooniga ah iyo daloolka dheellitiran iyo kuleylka kuleylka sare.

Soo ifbaxa 8inch substrates SiC waxay u taagan tahay horumar la taaban karo ee warshadaha korantada. Qalabka semiconductor-ku-saleysan ee dhaqameed waxay la kulmaan hoos u dhac weyn oo ku yimaada waxqabadka xaaladaha daran sida heerkulka sare iyo koronta sare, halka substrate-yada SiC ay sii wadi karaan waxqabadkooda ugu fiican. Marka la barbar dhigo substrate-ka yar-yar, 8inch substrates SiC waxay bixiyaan aag farsamayn oo ka kooban hal gabal, taas oo u tarjumeysa waxtarka wax soo saarka sare iyo kharashyada hoose, oo muhiim u ah wadista habka ganacsi ee tignoolajiyada SiC.

Tiknoolajiyada kobaca ee 8inch silicon carbide (SiC) substrates waxay u baahan tahay saxnaanta iyo nadiifnimada aad u sareysa. Tayada substrate-ku waxay si toos ah u saamaysaa waxqabadka aaladaha soo socda, sidaa darteed soosaarayaashu waa inay adeegsadaan tignoolajiyada horumarsan si loo hubiyo dhammaystirka crystalline iyo cufnaanta cilladda hoose ee substrates. Tani waxay caadi ahaan ku lug leedahay habsocodyada kaydinta uumiga kiimikaad kakan (CVD) iyo korriinka saxda ah iyo farsamooyinka goynta. 4H-N iyo HPSI SiC substrates ayaa si gaar ah loogu isticmaalaa beerta korantada elektiroonigga ah, sida beddelayaasha awoodda waxtarka leh ee sarreeya, rogayaasha gawaarida korontada, iyo nidaamyada tamarta la cusboonaysiin karo.

Waxaan ku siin karnaa 4H-N 8inch substrate SiC, darajooyin kala duwan ee maraqa substrate-ka. Waxa kale oo aanu diyaarin karnaa habayn ku salaysan baahidaada. Weydiinta soo dhawoow!