Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Grade Dummy grade

Substrate-ka SiC 3inch 350um dhumucdiisuna waxay tahay HPSI nooca Prime Fasalka dhaldhalaalka Sawirka

Sharaxaad Gaaban:

Waferrada 3-inch High Purity Silicon Carbide (SiC) waxaa si gaar ah loogu farsameeyay dalabaadka codsiyada korontada, optoelectronics, iyo cilmi baarista horumarsan. Laga heli karo Wax-soo-saarka, Cilmi-baarista, iyo Fasalada Dummy-ga ah, mareegahani waxay keenaan iska caabin gaar ah, cufnaanta cilladda hoose, iyo tayada sare ee dusha sare. Guryaha dahaadhka ah ee aan la daboolin, waxay bixiyaan habka ugu habboon ee lagu soo saari karo qalabka waxqabadka sare ee ku shaqeeya xaaladaha kulaylka iyo korantada ee aadka u daran.

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Guryaha

Halbeegga	Heerka Wax-soo-saarka	Darajada Cilmi-baarista	Dummy Fasalka	Unug
Darajo	Heerka Wax-soo-saarka	Darajada Cilmi-baarista	Dummy Fasalka
Dhexroorka	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Dhumucda	500 ± 25	500 ± 25	500 ± 25	µm
Hanuuninta Wafer	dhidibka: <0001> ± 0.5°	dhidibka: <0001> ± 2.0°	dhidibka: <0001> ± 2.0°	shahaado
Cufnaanta Dheecaan yar (MPD)	≤ 1	≤ 5	≤ 10	cm-2^-2-2
Iska caabin koronto	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Ka laabasho	Ka laabasho	Ka laabasho
Hanuuninta Flat Primary	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	shahaado
Dhererka Guriga aasaasiga ah	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Dhererka Guriga Sare	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Hanuuninta Guriga Sare	90° CW dabaqa hoose ± 5.0°	90° CW dabaqa hoose ± 5.0°	90° CW dabaqa hoose ± 5.0°	shahaado
Ka saarida gees	3	3	3	mm
LTV/TTV/Bow/Warp	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ± 40 / 45	µm
Qalafsanaanta dusha sare	Si-wejiga: CMP, C-wejiga: La sifayn	Si-wejiga: CMP, C-wejiga: La sifayn	Si-wejiga: CMP, C-wejiga: La sifayn
Dildilaaca (Iftiinka xoogga badan)	Midna	Midna	Midna
Hex Plates (Iftiinka Xoogga Sare)	Midna	Midna	Aagga isugeynta 10%	%
Aagaga Noocyo badan (Iftiinka Xoogga Sare)	Aagga isugeynta 5%	Aagga isugeynta 20%	Aagga isugeynta 30%	%
Xaaqid (Iftiin aad u sarreeya)	≤ 5 xagtin, dhererka isugaynta ≤ 150	≤ 10 xoqid, dhererka isugeynta ≤ 200	≤ 10 xoqid, dhererka isugeynta ≤ 200	mm
Chipping Edge	Midna ≥ 0.5 mm ballac/ qoto dheer	2 la ogol yahay ≤ 1 mm ballac/qoto dheer	5 la ogol yahay ≤ 5 mm ballac/qoto dheer	mm
Wasakhaynta Dusha sare	Midna	Midna	Midna

Codsiyada

1.Awoodda Sare ee Elektarooniga ah
Dhaqdhaqaaqa kulaylka sare iyo farqiga ballaadhan ee waferrada SiC ayaa ka dhigaya kuwo ku habboon aaladaha awoodda sare leh, ee soo noqnoqda:
●MOSFETs iyo IGBT-yada loogu talagalay beddelka awoodda.
●Habab koronto oo horumarsan oo baabuurta korantada, ay ku jiraan rogayaasha iyo dabaysha.
●Kaabayaasha xariiqda smart iyo nidaamyada tamarta la cusboonaysiin karo.
2. RF iyo Nidaamyada Microwave
Substrates SiC waxay awood u siinaysaa codsiyada RF-sare ee soo noqnoqda iyo microwave-ka leh luminta calaamadaha ugu yar:
●Isgaarsiinta iyo nidaamyada dayax-gacmeedka.
●Nidaamka raadaarka hawada sare.
●Qaybaha shabakada 5G horumarsan.
3. Optoelectronics iyo Sensors
Astaamaha gaarka ah ee SiC waxay taageeraan codsiyo kala duwan oo optoelectronic ah:
●Baaraha UV ee la socodka deegaanka iyo dareemada warshadaha.
●LED iyo substrates laysarka ee nalka adag iyo qalabka saxda ah.
●Dareemaha heerkulka sare ee hawada iyo warshadaha baabuurta.
4. Cilmi-baarista iyo Horumarinta
Kala duwanaanshaha darajooyinka (Wax soo saarka, Cilmi-baadhista, Dummy) ayaa awood u siinaya tijaabinta gees-goynta iyo tijaabinta qalabka ee akadeemiyada iyo warshadaha.

Faa'iidooyinka

● Lagu kalsoonaan karo:Iska caabin heer sare ah iyo xasilloonida dhammaan fasalada.
● Habaynta:Hanuuninta iyo dhumucyada loo habeeyey si ay ugu habboonaato baahiyaha kala duwan.
●Nadiifin Sare:Halabuurka aan la daboolin waxay hubisaa kala duwanaanshaha ugu yar ee wasakhda la xidhiidha.
●Miisaanka:Buuxiyay shuruudaha wax soo saarka ballaaran iyo cilmi-baarista tijaabada labadaba.
Waferrada 3-inji ee nadiifka sare ah ee SiC waa albaabkaaga aaladaha waxqabadka sare leh iyo horumarka tignoolajiyada cusub. Wixii su'aalo ah iyo faahfaahin faahfaahsan, nala soo xiriir maanta.

Soo koobid

3-inch High Purity Silicon Carbide (SiC) Wafers, oo laga heli karo Wax-soo-saarka, Cilmi-baarista, iyo Fasallada Dummy, waa substrate-ka qaaliga ah ee loogu talagalay qalabka elektiroonigga ah ee awoodda sare leh, nidaamyada RF/microwave, optoelectronics, iyo R&D horumarsan. Wafers-yadani waxay ka kooban yihiin sifooyin aan la daboolin, sifooyin-dahaar leh oo leh iska caabin heer sare ah (≥1E10 Ω·cm ee Fasalka Wax-soo-saarka), cufnaanta micropipe hoose (≤1 cm-2 ^ -2-2), iyo tayada dusha sare ee gaarka ah. Waxaa loo habeeyay codsiyada waxqabadka sare leh, oo ay ku jiraan beddelka awoodda, isgaarsiinta, dareenka UV, iyo tignoolajiyada LED. Iyada oo la raacayo jihooyin la beddeli karo, kuleyl kuleyl sare leh, iyo siyaal farsamo oo adag, waferradan SiC waxay awood u siinayaan wax ku ool ah, qalab la isku halleyn karo iyo hal-abuur cusub oo warshadaha oo dhan ah.