Substrate-ka SiC 3 inji 350um dhumucdiisuna tahay nooca HPSI Prime Grade Dummy grade

Sharaxaad Gaaban:

Waferada 3-inji ah ee High Purity Silicon Carbide (SiC) waxaa si gaar ah loogu farsameeyay codsiyada adag ee elektaroonigga korontada, optoelectronics, iyo cilmi-baarista horumarsan. Waxaa laga heli karaa Wax soo saarka, Cilmi-baarista, iyo Darajooyinka Dummy, waferadani waxay bixiyaan iska caabin gaar ah, cufnaan cillad yar, iyo tayo sare oo dusha sare ah. Iyada oo leh sifooyin nus-daboolid ah oo aan la furin, waxay bixiyaan madal ku habboon in lagu sameeyo aaladaha waxqabadka sare leh ee ku shaqeeya xaaladaha kulaylka iyo korontada ee aadka u daran.


Astaamaha

Guryaha

Halbeegga

Heerka Wax Soo Saarka

Darajada Cilmi-baarista

Fasalka Madow

Cutubka

Fasal Heerka Wax Soo Saarka Darajada Cilmi-baarista Fasalka Madow  
Dhexroorka 76.2 ± 0.5 76.2 ± 0.5 76.2 ± 0.5 mm
Dhumucda 500 ± 25 500 ± 25 500 ± 25 µm
Jihaynta Wafer-ka Dhidibka dul saaran: <0001> ± 0.5° Dhidibka: <0001> ± 2.0° Dhidibka: <0001> ± 2.0° shahaado
Cufnaanta Tuubooyinka Yaryar (MPD) ≤ 1 ≤ 5 ≤ 10 cm−2^-2−2
Iska caabinta Korontada ≥ 1E10 ≥ 1E5 ≥ 1E5 Ω·cm
Dopant Lama isticmaalin Lama isticmaalin Lama isticmaalin  
Jihada Fidsan ee Aasaasiga ah {1-100} ± 5.0° {1-100} ± 5.0° {1-100} ± 5.0° shahaado
Dhererka Fidsan ee Aasaasiga ah 32.5 ± 3.0 32.5 ± 3.0 32.5 ± 3.0 mm
Dhererka Fidsan ee Labaad 18.0 ± 2.0 18.0 ± 2.0 18.0 ± 2.0 mm
Jihada Fidsan ee Labaad 90° CW laga bilaabo guriga koowaad ± 5.0° 90° CW laga bilaabo guriga koowaad ± 5.0° 90° CW laga bilaabo guriga koowaad ± 5.0° shahaado
Ka-saarista Cidhifka 3 3 3 mm
LTV/TTV/Qaanso/Warp 3 / 10 / ±30 / 40 3 / 10 / ±30 / 40 5 / 15 / ±40 / 45 µm
Qalafsanaanta Dusha sare Si-wejiga: CMP, C-wejiga: La safeeyey Si-wejiga: CMP, C-wejiga: La safeeyey Si-wejiga: CMP, C-wejiga: La safeeyey  
Dildilaacyo (Iftiinka Xoogga Badan) Midna ma jiro Midna ma jiro Midna ma jiro  
Saxannada Hex (Iftiinka Xoogga Sare leh) Midna ma jiro Midna ma jiro Aagga guud 10% %
Meelaha Nooca Badan (Iftiinka Xoogga Badan) Aagga wadarta 5% Aagga guud 20% Baaxadda guud 30% %
Xoqitaan (Iftiinka Xoogga Sare leh) ≤ 5 xoqan, dhererka wadarta ≤ 150 ≤ 10 xoqan, dhererka wadarta ≤ 200 ≤ 10 xoqan, dhererka wadarta ≤ 200 mm
Jabinta geeska Midna ≥ 0.5 mm ballac/qoto dheer 2 la oggol yahay ≤ 1 mm ballac/qoto dheer 5 la oggol yahay ≤ 5 mm ballac/qoto dheer mm
Wasakhowga Dusha Sare Midna ma jiro Midna ma jiro Midna ma jiro  

Codsiyada

1. Elektarooniga Awoodda Sare leh
Gudbinta kulaylka sare iyo farqiga ballaaran ee wafers-ka SiC ayaa ka dhigaya kuwo ku habboon aaladaha awoodda sare leh, kuwa soo noqnoqda sare leh:
●MOSFET-yada iyo IGBT-yada loogu talagalay beddelka awoodda.
●Nidaamyada korontada ee baabuurta korontada ku shaqeeya ee horumarsan, oo ay ku jiraan qalabka korontada ku shaqeeya iyo kuwa wax lagu dallaco.
●Kaabayaasha shabakadda casriga ah iyo nidaamyada tamarta la cusboonaysiin karo.
2. Nidaamyada RF iyo Microwave-ka
Substrates-ka SiC waxay awood u siinayaan codsiyada RF-ga iyo microwave-ka ee soo noqnoqda sare leh iyadoo luminta calaamadda ay yar tahay:
● Nidaamyada isgaarsiinta iyo dayax-gacmeedka.
●Nidaamyada raadaarka hawada sare.
●Qaybaha shabakadda 5G ee horumarsan.
3. Qalabka Elektarooniga ah iyo Dareemayaasha
Sifooyinka gaarka ah ee SiC waxay taageeraan codsiyo kala duwan oo optoelectronic ah:
● Qalabka lagu ogaado shucaaca UV-ga ee la socodka deegaanka iyo dareenka warshadaha.
● Qalabka LED iyo laysarka ee loogu talagalay nalalka adag iyo qalabka saxda ah.
● Dareemayaasha heerkulka sare ee warshadaha hawada sare iyo baabuurta.
4. Cilmi-baaris iyo Horumarin
Kala duwanaanshaha darajooyinka (Waxsoosaarka, Cilmi-baarista, Dummy) waxay suurtogal ka dhigaysaa tijaabinta ugu dambeysa iyo tijaabinta qalabka ee akadeemiyadda iyo warshadaha.

Faa'iidooyinka

● Kalsooni:Iska caabin iyo xasillooni aad u fiican dhammaan heerarka.
● Habayn:Jihooyinka iyo dhumucda loo habeeyey si ay ugu habboonaadaan baahiyaha kala duwan.
●Daacad Sare:Halabuurka aan la isticmaalin wuxuu hubiyaa kala duwanaansho yar oo la xiriira wasakhda.
● Cabbiraadda:Waxay buuxisaa shuruudaha wax soo saarka ballaaran iyo cilmi-baarista tijaabada labadaba.
Waferada SiC ee 3-inji ah ee saafiga sare leh waa albaabka aad ka geli karto aaladaha waxqabadka sare leh iyo horumarka tignoolajiyada ee cusub. Wixii su'aalo ah iyo tilmaamo faahfaahsan, nala soo xiriir maanta.

Soo Koobid

Wafers-ka 3-inji ah ee High Purity Silicon Carbide (SiC), oo laga heli karo Wax-soo-saarka, Cilmi-baarista, iyo Darajooyinka Dummy, waa substrates heer sare ah oo loogu talagalay elektaroonigga awoodda sare leh, nidaamyada RF/mikrowev-ka, optoelectronics, iyo R&D horumarsan. Wafers-yadan waxay leeyihiin sifooyin aan la furin, oo nus-dabool ah oo leh iska caabin aad u fiican (≥1E10 Ω·cm Heerka Wax-soo-saarka), cufnaanta micropipe-ka oo hooseysa (≤1 cm−2^-2−2), iyo tayada dusha sare ee gaarka ah. Waxaa loo habeeyay codsiyada waxqabadka sare leh, oo ay ku jiraan beddelka awoodda, isgaarsiinta, dareemaha UV, iyo teknoolojiyada LED. Iyada oo leh jihooyin la beddeli karo, hufnaan kuleyl oo heer sare ah, iyo sifooyin farsamo oo adag, wafers-yadan SiC waxay awood u siinayaan sameynta qalab hufan oo la isku halleyn karo iyo hal-abuur cusub oo ka dhaca warshadaha oo dhan.

Jaantus Faahfaahsan

SiC Semi-insulating04
SiC Semi-insulating05
SiC Semi-insulating01
SiC Semi-daboolid06

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