Nooca SiC Ingot 4H Dia 4inch 6inch Dhumucda Cilmi-baarista / Darajada Madow

Sharaxaad Gaaban:

Silicon Carbide (SiC) waxay soo baxday iyadoo ah walax muhiim ah oo ku jirta codsiyada elektaroonigga ah iyo kuwa optoelectronic-ka ee horumarsan sababtoo ah sifooyinkeeda korontada, kulaylka, iyo farsamada ee sare. 4H-SiC Ingot, oo laga heli karo dhexroorka 4-inch iyo 6-inch oo dhumucdiisu tahay 5-10 mm, waa badeeco aasaasi ah oo loogu talagalay ujeeddooyinka cilmi-baarista iyo horumarinta ama agab heer-qafiif ah. Ingot-kan waxaa loogu talagalay inuu siiyo cilmi-baarayaasha iyo soosaarayaasha substrate-yada SiC ee tayada sare leh ee ku habboon soo saarista qalabka tijaabada ah, daraasadaha tijaabada, ama habraacyada hagaajinta iyo tijaabinta. Iyada oo leh qaab-dhismeedkeeda gaarka ah ee kiristaalka lix-geesoodka ah, ingot-ka 4H-SiC wuxuu bixiyaa ku-habboonaan ballaaran oo ku saabsan elektaroonigga awoodda, aaladaha soo noqnoqda sare, iyo nidaamyada u adkaysta shucaaca.

Noo soo dir emayl

Astaamaha

Guryaha

1. Qaab-dhismeedka Crystal iyo Jihaynta
Nooc Boli ah: 4H (qaab-dhismeedka lix-geesoodka ah)
Joogtada ah ee Laamiga:
a = 3.073 Å
c = 10.053 Å
Jihaynta: Caadiyan [0001] (C-plane), laakiin jihooyinka kale sida [11\overline{2}0] (A-plane) ayaa sidoo kale la heli karaa marka la codsado.

2. Cabbirka Jirka
Dhexroorka:
Xulashooyinka caadiga ah: 4 inji (100 mm) iyo 6 inji (150 mm)
Dhumucda:
Waxaa laga heli karaa inta u dhaxaysa 5-10 mm, oo la beddeli karo iyadoo ku xiran shuruudaha codsiga.

3. Sifooyinka Korontada
Nooca Daweynta: Waxaa laga heli karaa qaab gudaha ah (nus-insulating), nooca n (lagu daweeyay nitrogen), ama nooca p (lagu daweeyay aluminium ama boron).

4. Sifooyinka Kuleylka iyo Farsamada
Qaboojinta Kulaylka: 3.5-4.9 W/cm·K heerkulka qolka, taasoo suurtogalinaysa kala-baxa kulaylka oo aad u fiican.
Adkaanta: Mohs 9, taasoo ka dhigaysa SiC kan labaad ee kaliya dheemanka marka loo eego adkeysiga.

Halbeegga	Faahfaahinta	Cutubka
Habka Kobaca	PVT (Gaadiidka Uumiga Jirka)
Dhexroorka	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Nooc polytype ah	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Jihaynta Dusha Sare	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (kuwa kale)	shahaado
Nooca	Nooca N-ga
Dhumucda	5-10 / 10-15 / >15	mm
Jihada Fidsan ee Aasaasiga ah	(10-10) ± 5.0˚	shahaado
Dhererka Fidsan ee Aasaasiga ah	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Jihada Fidsan ee Labaad	90˚ CCW laga bilaabo jihada ± 5.0˚	shahaado
Dhererka Fidsan ee Labaad	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Midna (150 mm)	mm
Fasal	Cilmi-baaris / Madow

Codsiyada

1. Cilmi-baaris iyo Horumarin

Ingot-ka heerka cilmi-baarista 4H-SiC wuxuu ku habboon yahay shaybaarrada tacliinta iyo warshadaha ee diiradda saaraya horumarinta qalabka ku salaysan SiC. Tayadiisa kristalinta sare waxay suurtogal ka dhigaysaa tijaabin sax ah oo ku saabsan sifooyinka SiC, sida:
Daraasadaha dhaqdhaqaaqa side-qaadayaasha.
Farsamooyinka qeexidda cilladaha iyo yaraynta.
Hagaajinta hababka koritaanka epitaxial.

2. Substrate-ka been abuurka ah
Ingot-ka heerka-dummy-ka ah waxaa si weyn loogu isticmaalaa tijaabinta, hagaajinta, iyo codsiyada tijaabinta qaab-dhismeedka. Waa beddel kharash-ool ah oo loogu talagalay:
Habaynta halbeegyada habka ee Kaydinta Uumiga Kiimikada (CVD) ama Kaydinta Uumiga Jirka (PVD).
Qiimaynta hababka xoqidda iyo nadiifinta ee jawiga wax soo saarka.

3. Elektarooniga Korontada
Iyada oo ay ugu wacan tahay farqiga ballaaran iyo kulaylka sare ee uu ku shaqeeyo, 4H-SiC waa saldhig u ah elektaroonigga korontada, sida:
MOSFET-yada danab sare leh.
Schottky Barrier Diodes (SBDs).
Transistors-ka Saameynta Goobta Isgoyska (JFETs).
Codsiyada waxaa ka mid ah inverters-ka baabuurta korontada ku shaqeeya, inverters-ka qorraxda ku shaqeeya, iyo shabakadaha smart.

4. Qalabka Soo Noqnoqda ee Sare
Dhaqdhaqaaqa elektaroonigga ee sare ee walaxda iyo khasaaraha awoodda oo hooseeya ayaa ka dhigaya mid ku habboon:
Transistors-ka Soo Noqnoqoshada Raadiyaha (RF).
Nidaamyada isgaarsiinta bilaa-waayirka ah, oo ay ku jiraan kaabayaasha 5G.
Codsiyada hawada sare iyo difaaca ee u baahan nidaamyada radar.

5. Nidaamyada u adkaysta shucaaca
Iska caabbinta 4H-SiC ee waxyeelada shucaaca ayaa ka dhigaysa mid aan lagama maarmaan u ah deegaannada adag sida:
Qalabka sahaminta hawada sare.
Qalabka la socodka warshadda korontada nukliyeerka.
Qalabka elektarooniga ah ee heerka militariga.

6. Teknoolojiyada Soo Kordhaysa
Marka tignoolajiyada SiC ay horumarto, codsiyadeedu waxay sii wadaan inay koraan oo ay u gudbaan meelaha sida:
Cilmi-baarista sawir-qaadista iyo xisaabinta quantum-ka.
Horumarinta nalalka LED-yada awoodda sare leh iyo dareemayaasha UV.
Is-dhexgalka heterostructures-ka semiconductor-ka ballaaran.
Faa'iidooyinka Ingot 4H-SiC
Nadiifin Sare: Waxaa lagu sameeyay xaalado adag si loo yareeyo wasakhda iyo cufnaanta cilladaha.
Cabbiraadda: Waxaa laga heli karaa dhexroorka 4-inji iyo 6-inji si loo taageero baahiyaha heerka warshadaha iyo kuwa heerka cilmi-baarista.
Kala duwanaansho: La qabsan karo noocyada kala duwan ee daawada iyo jihooyinka si loo daboolo shuruudaha codsiga gaarka ah.
Waxqabadka Adag: Xasillooni kuleyl iyo farsamo oo heer sare ah marka ay jiraan xaalado shaqo oo aad u daran.

Gunaanad

Ingot-ka 4H-SiC, oo leh sifooyinkiisa gaarka ah iyo codsiyo ballaaran, ayaa safka hore kaga jira hal-abuurka agabka ee elektaroonigga iyo optoelectronics-ka jiilka soo socda. Hadday tahay cilmi-baaris tacliimeed, tijaabinta warshadaha, ama soo saarista aaladaha horumarsan, ingot-yadani waxay bixiyaan goob lagu kalsoonaan karo oo lagu riixayo xuduudaha tignoolajiyada. Iyada oo la adeegsanayo cabbirro la beddeli karo, doping, iyo jihooyin, ingot-ka 4H-SiC waxaa loo habeeyay inuu daboolo baahiyaha sii kordhaya ee warshadaha semiconductor-ka.
Haddii aad xiisaynayso inaad wax badan barato ama aad dalbato, fadlan xor u noqo inaad la xiriirto si aad u hesho faahfaahin faahfaahsan iyo la-tashi farsamo.