Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucdiisuna 5-10mm Cilmi-baadhis

Nooca SiC Ingot 4H nooca Dia 4inch 6inch Dhumucda 5-10mm Cilmi-baadhista

Sharaxaad Gaaban:

Silicon Carbide (SiC) waxay u soo baxday inay tahay shay muhiim ah oo ku jira codsiyada elektaroonigga ah ee horumarsan iyo optoelectronic sababtoo ah koronto, kuleyl, iyo sifooyin farsamo oo sarreeya. 4H-SiC Ingot, oo lagu heli karo dhexroorka 4-inji iyo 6-inch oo leh dhumucdiisuna tahay 5-10 mm, waa badeecad aasaas u ah ujeedooyinka cilmi-baarista iyo horumarinta ama sida walxo-fasalka-xumeeya. Ingot-kan waxaa loogu talagalay inuu siiyo cilmi-baarayaasha iyo soo-saareyaasha SiC-hoosaadyo tayo sare leh oo ku habboon naqshad-samaynta aaladda, daraasadaha tijaabada ah, ama habraacyada cabbiridda iyo tijaabinta. Iyada oo leh qaab-dhismeedkeeda karistaanka ah ee laba geesoodka ah, 4H-SiC ingot wuxuu bixiyaa ku-dhaqanka ballaaran ee korantada elektiroonigga ah, aaladaha soo noqnoqda sare, iyo nidaamyada u adkaysta shucaaca.

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Faahfaahinta Alaabta

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Guryaha

1. Dhismaha Crystal iyo Hanuuninta
Nooca badan: 4H (qaab dhismeedka laba geesoodka ah)
Lattice Constant:
a = 3.073 Å
c = 10.053 Å
Hanuuninta: Caadi ahaan [0001] (C-plane), laakiin jihooyin kale sida [11\overline{2}0] (A-plane) ayaa waliba la heli karaa marka la codsado.

2. Cabirka Jirka
Dhexroorka:
Ikhtiyaarada caadiga ah: 4 inji (100 mm) iyo 6 inji (150 mm)
Dhumucda:
Waxaa lagu heli karaa inta u dhexeysa 5-10 mm, la beddeli karo iyadoo ku xiran shuruudaha codsiga.

3. Guryaha Korontada
Nooca Doping: Waxaa lagu heli karaa gudaha (semi-insulating), n-nooca (doped with nitrogen), ama p-type (doped with aluminium ama boron).

4. Guryaha kulaylka iyo Makaanikada
Habaynta kulaylka: 3.5-4.9 W/cm · K heerkulka qolka, awood u siinaysa kala daadinta kulaylka wanaagsan.
Adag: Mohs cabirka 9, taasoo ka dhigaysa SiC labaad kaliya dheeman adag.

Halbeegga	Faahfaahin	Unug
Habka Kobaca	Gaadiidka Uumiga Jirka (PVT)
Dhexroorka	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Noocyo badan	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Hanuuninta dusha sare	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (kuwa kale)	shahaado
Nooca	N-nooca
Dhumucda	5-10 / 10-15 / >15	mm
Hanuuninta Flat Primary	(10-10) ± 5.0˚	shahaado
Dhererka Guriga aasaasiga ah	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Hanuuninta Guriga Sare	90˚ CCW laga bilaabo hanuuninta ± 5.0˚	shahaado
Dhererka Guriga Sare	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Midna (150 mm)	mm
Darajo	Cilmi-baaris / Dummy

Codsiyada

1. Cilmi-baarista iyo Horumarinta

Darajada cilmi-baarista ee 4H-SiC ingot waxay ku habboon tahay shaybaarrada tacliinta iyo warshadaha ee diiradda lagu saaray horumarinta aaladda ku saleysan SiC. Tayada crystalline-keeda sare waxay awood u siinaysaa tijaabinta saxda ah ee guryaha SiC, sida:
Daraasadaha dhaqdhaqaaqa side.
Tilmaamaha cilladaysan iyo farsamooyinka yaraynta.
Hagaajinta hababka koritaanka epitaxial.

2. Substrate-ka xun
Ingot-ka-dulmiga waxaa si weyn loogu isticmaalaa tijaabinta, habeynta, iyo codsiyada wax-ku-yeelaynta. Waa beddelka kharash-ool ah:
Habraaca cabbirka cabbirka ee Kaydinta Uumiga Kiimikada (CVD) ama Dhigista Uumiga Jirka (PVD).
Qiimaynta etching iyo polishing hababka wax soo saarka.

3. Korontada Elektarooniga ah
Iyada oo ay ugu wacan tahay gaabsigeeda ballaadhan iyo dhaqdhaqaaqa kulaylka sare, 4H-SiC waa tiir-dhexaadka korantada korantada, sida:
MOSFET-yada korantada sare leh.
Schottky Barrier Diodes (SBDs).
Isgoysyada Saamaynta Goob Joogista (JFETs).
Codsiyada waxaa ka mid ah rogayaasha gawaarida korantada, rogayaasha qoraxda, iyo xadhkaha smart.

4. Aaladaha soo noqnoqda
Dhaqdhaqaaqa elektiroonigga ee sarreeya ee walaxda iyo luminta awoodda yar ayaa ka dhigaysa mid ku habboon:
Inta jeer ee Raadiyaha (RF) transistors.
Nidaamyada isgaarsiinta wireless-ka, oo ay ku jiraan kaabayaasha 5G.
Aerospace iyo codsiyada difaaca u baahan nidaamka radar.

5. Nidaamyada Shucaaca-iska-caabbinta
4H-SiC caabbinta dabiiciga ah ee waxyeelada shucaaca ayaa ka dhigaysa mid aan looga maarmin deegaan qallafsan sida:
Qalabka sahaminta booska.
Qalabka la socodka warshada tamarta nukliyeerka.
Qalabka elektaroonigga ah ee heerka militariga.

6. Farsamooyinka Soo Koraya
Sida tignoolajiyada SiC u horumarto, codsiyadeedu waxay sii wadaan inay u koraan meelo ay ka mid yihiin:
Photonics iyo cilmi-baarista xisaabinta tirada.
Horumarinta LED-yada awoodda sare leh iyo dareemayaasha UV.
Isku dhafka qaab-dhismeedyada semiconductor-bandgap-ballaaran.
Faa'iidooyinka 4H-SiC Ingot
Nadiif Sare: Waxa lagu soo saaray shuruudo adag si loo yareeyo wasakhda iyo cufnaanta cilladaysan.
Miisaanka: Waxaa lagu heli karaa labada dhexroor ee 4-inch iyo 6-inch si loo taageero heerka warshadaha iyo baahiyaha cabbirka cilmi-baarista.
Kala duwanaansho: La qabsan kara noocyada kala duwan ee doping-ka iyo hanuuninta si loo buuxiyo shuruudaha codsiga gaarka ah.
Waxqabad Adag: Kuleyl sare iyo xasillooni farsamo oo hoos timaada xaalado shaqo oo aad u daran.

Gabagabo

4H-SiC ingot, oo leh sifooyinkeeda gaarka ah iyo codsiyo kala duwan, ayaa safka hore kaga jira hal-abuurnimada agabka soo socda ee elektiroonigga iyo optoelectronics. Haddii loo isticmaalo cilmi-baadhis tacliimeed, wax-soo-saar warshadeed, ama wax-soo-saar qalab horumarsan, ingots-yadani waxay bixiyaan madal la isku halayn karo oo lagu riixayo xuduudaha tignoolajiyada. Iyada oo la adeegsanayo cabbirro la beddeli karo, doping, iyo hanuunin, 4H-SiC ingot waxaa loo habeeyey si uu u buuxiyo baahida isbeddelka ee warshadaha semiconductor.
Haddii aad xiisaynayso inaad wax badan barato ama aad dalbato, fadlan xor u noqo inaad la xidhiidho qeexitaan faahfaahsan iyo la tashi farsamo.